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Chin. Phys. B, 2021, Vol. 30(9): 096107    DOI: 10.1088/1674-1056/ac11e1
CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES Prev   Next  

Nanoscale structural investigation of Zn1-xMgxO alloy films on polar and nonpolar ZnO substrates with different Mg contents

Xin Liang(梁信)1, Hua Zhou(周华)2,†, Hui-Qiong Wang(王惠琼)1,3,‡, Lihua Zhang(张丽华)4, Kim Kisslinger4, and Junyong Kang(康俊勇)1
1 Key Laboratory of Semiconductors and Applications of Fujian Province, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Department of Physics, Xiamen University, Xiamen 361005, China;
2 School of Physics, Shandong University, Jinan 250100, China;
3 Department of Physics, Xiamen University Malaysia, Sepang 43900, Selangor, Malaysia;
4 Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, New York 11973, USA
Abstract  Zn1-xMgxO alloy films are important deep ultraviolet photoelectric materials. In this work, we used plasma-assisted molecular beam epitaxy to prepare Zn1-xMgxO films with different magnesium contents on polar (0001) and nonpolar (1010) ZnO substrates. The nanoscale structural features of the grown alloy films as well as the interfaces were investigated. It was observed that the cubic phases of the alloy films emerged when the Mg content reached 20% and 37% for the alloy films grown on the (0001) and (1010) ZnO substrates, respectively. High-resolution transmission electron microscopy images revealed cubic phases without visible hexagonal phases for the alloy films with more than 70% magnesium, and the cubic phases exhibited three-fold and two-fold rotations for the alloy films on the polar (0001) and nonpolar (1010) ZnO substrates, respectively. This work aims to provide references for monitoring the Zn1-xMgxO film structure with respect to different substrate orientations.
Keywords:  Zn1-xMgxO films      molecular beam epitaxy      phase separation      transmission electron microscopy  
Received:  06 April 2021      Revised:  21 June 2021      Accepted manuscript online:  07 July 2021
PACS:  61.72.uj (III-V and II-VI semiconductors)  
  05.70.Fh (Phase transitions: general studies)  
  07.30.Kf (Vacuum chambers, auxiliary apparatus, and materials)  
Fund: Project supported by the National Natural Science Foundation of China (Grant No. 11804050).
Corresponding Authors:  Hua Zhou, Hui-Qiong Wang     E-mail:  zhouhua2018@sdu.edu.cn;hqwang@xmu.edu.cn

Cite this article: 

Xin Liang(梁信), Hua Zhou(周华), Hui-Qiong Wang(王惠琼), Lihua Zhang(张丽华), Kim Kisslinger, and Junyong Kang(康俊勇) Nanoscale structural investigation of Zn1-xMgxO alloy films on polar and nonpolar ZnO substrates with different Mg contents 2021 Chin. Phys. B 30 096107

[1] Özgürü, Alivov Y I, Liu C, Teke A, Reshchikov M A, Doğan S, Avrutin V, Cho S J and Morkoç H 2005 J. Appl. Phys. 98 041301
[2] Wang K, Li L and Yao S D 2009 Chin. Phys. Lett. 26 108101
[3] Etacheri V, Roshan R and Kumar V 2012 ACS Applied Materials & Interfaces 4 2717
[4] Vashaei Z, Minegishi T, Suzuki H, Hanada T, Cho M W, Yao T and Setiawan A 2005 J. Appl. Phys. 98 054911
[5] Maity S and Sahu P P 2019 Thin Solid Films 674 107
[6] Wang L K, Ju Z G, Shan C X, Zheng J, Li B H, Zhang Z Z, Yao B, Zhao D X, Shen D Z and Zhang J Y 2010 Journal of Crystal Growth 312 875
[7] Han S, Shen D Z, Zhang J Y, Zhao Y M, Jiang D Y, Ju Z G, Zhao D X and Yao B 2010 Vacuum 84 1149
[8] Xu T N, W H Z, Qiu D J and Chen N B 2003 Chin. Phys. Lett. 20 1829
[9] Takeuchi I, Yang W, Chang K S, Aronova M A, Venkatesan T, Vispute R D and Bendersky L A 2003 J. Appl. Phys. 94 7336
[10] Wei M, Boutwell R C, Mares J W, Scheurer A and Schoenfeld W V 2011 Appl. Phys. Lett. 98 261913
[11] Yadav M K, Ghosh M, Biswas R, Raychaudhuri A K, Mookerjee A and Datta S 2007 Phys. Rev. B 76 195450
[12] Wu K P, Qi J, Peng B, Tang K, Ye J D, Zhu S M and Gu S L 2015 Acta Phys. Sin. 64 187304 (in Chinese)
[13] Liang J, Wu H Z, Lao Y F, Qiu D J, Chen N B and Xu T N 2004 Chin. Phys. Lett. 21 1135
[14] Boutwell R C, Wei M, Baudelet M and Schoenfeld W V 2014 J. Alloys Compd. 584 327
[15] Wu Y, Dong B, Zhang L, Song H B and Yan C J 2018 International Journal of Hydrogen Energy 43 12627
[16] Santander-Syro A F, Copie O, Kondo T, Fortuna F, Pailhes S, Weht R, Qiu X G, Bertran F, Nicolaou A, Taleb-Ibrahimi A, Le Fevre P, Herranz G, Bibes M, Reyren N, Apertet Y, Lecoeur P, Barthelemy A and Rozenberg M J 2011 Nature 469 189
[17] Haeni J H, Irvin P, Chang W, Uecker R, Reiche P, Li Y L, Choudhury S, Tian W, Hawley M E, Craigo B, Tagantsev A K, Pan X Q, Streiffer S K, Chen L Q, Kirchoefer S W, Levy J and Schlom D G 2004 Nature 430 758
[18] Zhang S G, Guo D L, Wang M J, Javed M S and Hu C G 2015 Applied Surface Science 335 115
[19] Ueno K, Nakamura S, Shimotani H, Ohtomo A, Kimura N, Nojima T, Aoki H, Iwasa Y and Kawasaki M 2008 Nat. Mater. 7 855
[20] Park M H, Lee H J, Kim G H, Kim Y J, Kim J H, Lee J H and Hwang C S 2011 Adv. Funct. Mater. 21 4305
[21] Zhu Y M, Chang W S, Yu R, Liu R R, Wei T C, He J H, Chu Y H and Zhan Q 2015 Appl. Phys. Lett. 107 191902
[22] Liang D D, Li X P, Wang J S, Wu L C and Chen P 2018 Solid-State Electronics 145 46
[23] Fritsch D, Schmidt H and Grundmann M 2006 Appl. Phys. Lett. 88 134104
[24] Pintilie I, Pasuk I, Ibanescu G A, Negrea R, Chirila C, Vasile E and Pintilie L 2012 J. Appl. Phys. 112 104103
[25] Zheng P P, Sun B, Chen Y Z, Elshekh H, Yu T, Mao S S, Zhu S H, Wang H Y, Zhao Y and Yu Z 2019 Applied Materials Today 14 21
[26] Zheng H, Zhu H, Tang Z, Wang Y, Wei H and Shan C 2020 Chin. Phys. B 29 097302
[27] Hu Z F, W H H, Lv Y W and Zhang X Q 2015 Chin. Phys. B 24 107302
[28] Zhou H, Wang J, Mai M F, Ma X Z, Hu S J, Xu M C, Bai L H and Yan S S 2020 Thin Solid Films 709 138074
[29] Maria J P, Trolier-McKinstry S, Schlom D G, Hawley M E and Brown G W 1998 J. Appl. Phys. 83 4373
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