1 Institute of Physics, and Beijing National Laboratory for Condensed Matter Physics, Chinese Academy of Sciences, Beijing 100190, China; 2 School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China; 3 Songshan Lake Materials Laboratory, Dongguan 523808, China
Abstract We report the transport properties of a topological insulator candidate, LiMgBi. The electric resistivity of the title compound exhibits a metal-to-semiconductor-like transition at around 160 K and tends to saturation below 50 K. At low temperatures, the magnetoresistance is up to ~260% at 9 T and a clear weak antilocalization effect is observed in the low magnetic-field region. The Hall measurement reveals that LiMgBi is a multiband system, where hole-type carriers (nh~1018 cm-3) play a major role in the transport process. Remarkably, LiMgBi possess a large Seebeck coefficient (~440 μV/K) and a moderate thermal conductivity at room temperature, which indicate that LiMgBi is a promising candidate in thermoelectric applications.
(Methods of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation)
Fund: Project supported by the National Key Research and Development Program of China (Grant No. 2016YFA0300604), the National Natural Science Foundation of China (Grant No. 11874417), and the Strategic Priority Research Program (B) of Chinese Academy of Sciences (Grant No. XDB33010100).
Hao OuYang(欧阳豪), Qing-Xin Dong(董庆新), Yi-Fei Huang(黄奕飞), Jun-Sen Xiang(项俊森), Li-Bo Zhang(张黎博), Chen-Sheng Li(李晨圣), Pei-Jie Sun(孙培杰), Zhi-An Ren(任治安), and Gen-Fu Chen(陈根富) Electric and thermal transport properties of topological insulator candidate LiMgBi 2021 Chin. Phys. B 30 127101
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