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Chin. Phys. B, 2018, Vol. 27(4): 047209    DOI: 10.1088/1674-1056/27/4/047209
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Room-temperature operating extended short wavelength infrared photodetector based on interband transition of InAsSb/GaSb quantum well

Ling Sun(孙令)1,2, Lu Wang(王禄)1, Jin-Lei Lu(鲁金蕾)1,2, Jie Liu(刘洁)1,2, Jun Fang(方俊)1,2, Li-Li Xie(谢莉莉)3, Zhi-Biao Hao(郝智彪)3, Hai-Qiang Jia(贾海强)1, Wen-Xin Wang(王文新)1, Hong Chen(陈弘)1
1. Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
2. University of Chinese Academy of Sciences, Beijing 100049, China;
3. Department of Electronic Engineering, Tsinghua University, Beijing 100084, China
Abstract  

Here in this paper, we report a room-temperature operating infrared photodetector based on the interband transition of an InAsSb/GaSb quantum well. The interband transition energy of 5-nm thick InAs0.91Sb0.09 embedded in the GaSb barrier is calculated to be 0.53 eV (2.35 μm), which makes the absorption range of InAsSb cover an entire range from short-wavelength infrared to long-wavelength infrared spectrum. The fabricated photodetector exhibits a narrow response range from 2.0 μm to 2.3 μm with a peak around 2.1 μm at 300 K. The peak responsivity is 0.4 A/W under -500 -mV applied bias voltage, corresponding to a peak quantum efficiency of 23.8% in the case without any anti-reflection coating. At 300 K, the photodetector exhibits a dark current density of 6.05×10-3 A/cm2 under -400-mV applied bias voltage and 3.25×10-5 A/cm2 under zero, separately. The peak detectivity is 6.91×1010 cm·Hz1/2/W under zero bias voltage at 300 K.

Keywords:  InAsSb/GaSb quantum well      interband transition      photodetector      room temperature operating  
Received:  17 December 2017      Revised:  01 February 2018      Accepted manuscript online: 
PACS:  72.80.Ey (III-V and II-VI semiconductors)  
  81.07.St (Quantum wells)  
  85.60.Gz (Photodetectors (including infrared and CCD detectors))  
Fund: 

Project supported by the National Natural Science Foundation of China (Grant No. 11574362).

Corresponding Authors:  Hong Chen     E-mail:  hchen@iphy.ac.cn

Cite this article: 

Ling Sun(孙令), Lu Wang(王禄), Jin-Lei Lu(鲁金蕾), Jie Liu(刘洁), Jun Fang(方俊), Li-Li Xie(谢莉莉), Zhi-Biao Hao(郝智彪), Hai-Qiang Jia(贾海强), Wen-Xin Wang(王文新), Hong Chen(陈弘) Room-temperature operating extended short wavelength infrared photodetector based on interband transition of InAsSb/GaSb quantum well 2018 Chin. Phys. B 27 047209

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