Characteristic modification by inserted metal layer and interface graphene layer in ZnO-based resistive switching structures

doi:10.1088/1674-1056/27/2/027104

Abstract ZnO-based resistive switching device Ag/ZnO/TiN, and its modified structure Ag/ZnO/Zn/ZnO/TiN and Ag/graphene/ZnO/TiN, were prepared. The effects of inserted Zn layers in ZnO matrix and an interface graphene layer on resistive switching characteristics were studied. It is found that metal ions, oxygen vacancies, and interface are involved in the RS process. A thin inserted Zn layer can increase the resistance of HRS and enhance the resistance ratio. A graphene interface layer between ZnO layer and top electrode can block the carrier transport and enhance the resistance ratio to several times. The results suggest feasible routes to tailor the resistive switching performance of ZnO-based structure.

Keywords: resistive switching ZnO graphene multilayer thin films

Received: 28 August 2017
Revised: 13 November 2017
Accepted manuscript online:

PACS:	71.55.Gs	(II-VI semiconductors)
	73.40.Sx	(Metal-semiconductor-metal structures)
	68.65.Pq	(Graphene films)
	68.65.Ac	(Multilayers)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 51002010 and 11274040).

Corresponding Authors: Zhi Wang
E-mail: wangzhi@bit.edu.cn

About author: 71.55.Gs; 73.40.Sx; 68.65.Pq; 68.65.Ac

Cite this article:

Hao-Nan Liu(刘浩男), Xiao-Xia Suo(索晓霞), Lin-Ao Zhang(张林奥), Duan Zhang(张端), Han-Chun Wu(吴汉春), Hong-Kang Zhao(赵宏康), Zhao-Tan Jiang(江兆潭), Ying-Lan Li(李英兰), Zhi Wang(王志) Characteristic modification by inserted metal layer and interface graphene layer in ZnO-based resistive switching structures 2018 Chin. Phys. B 27 027104

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Characteristic modification by inserted metal layer and interface graphene layer in ZnO-based resistive switching structures

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