Simulation on effect of metal/graphene hybrid transparent electrode on characteristics of GaN light emitting diodes

doi:10.1088/1674-1056/26/10/104402

Abstract In order to decrease the Schottky barrier height and sheet resistance between graphene (Gr) and the p-GaN layers in GaN-based light-emitting diodes (LEDs), some transparent thin films with good conductivity and large work function are essential to insert into Gr and p-GaN layers. In this work, the ultra-thin films of four metals (silver (Ag), golden (Au), nickel (Ni), platinum (Pt)) are explored to introduce as a bridge layer into Gr and p-GaN, respectively. The effect of a different combination of Gr/metal transparent conductive layers (TCLs) on the electrical, optical, and thermal characteristics of LED was investigated by the finite element methods. It is found that both the TCLs transmittance and the surface temperature of the LED chip reduces with the increase of the metal thickness, and the transmittance decreases to about 80% with the metal thickness increasing to 2 nm. The surface temperature distribution, operation voltage, and optical output power of the LED chips with different metal/Gr combination were calculated and analyzed. Based on the electrical, optical, and thermal performance of LEDs, it is found that 1.5-nm Ag or Ni or Pt, but 1-nm Au combined with 3 layered (L) Gr is the optimal Gr/metal hybrid transparent and current spreading electrode for ultra-violet (UV) or near-UV LEDs.

Keywords: finite element methods graphene temperature distribution transmittance light-emitting diodes

Received: 19 February 2017
Revised: 06 April 2017
Accepted manuscript online:

PACS:	44.05.+e	(Analytical and numerical techniques)
	44.90.+c	(Other topics in heat transfer)

Fund: Project supported by the National High-Technology Research and Development Program of China (Grant No. 2015AA034801), the Foundation of the State Key Laboratory of Mechanical Transmission of Chongqing University (Grant Nos. SKLMT-ZZKT-2017M15, SKLM-ZZKT-2015Z16, and SKLMT-KFKT-201419), the National Natural Science Foundation of China (Grant Nos. 11374359, 11304405, and 11544010), the Natural Science Foundation of Chongqing (Grant Nos. cstc2015jcyjA50035 and cstc2015jcyjA1660), the Fundamental Research Funds for the Central Universities, China (Grant Nos. 106112017CDJQJ328839, 106112014CDJZR14300050, 106112016CDJZR288805, and 106112015CDJXY300002), and the Sharing Fund of Large-scale Equipment of Chongqing University (Grant Nos. 201606150016, 201606150017, and 201606150056).

Corresponding Authors: Shu-Fang Zhang, Hai-Jun Luo, Liang Fang
E-mail: roseymcn2000@foxmail.com;lhj19830330@126.com;lfang@cqu.edu.cn

Cite this article:

Ming-Can Qian(钱明灿), Shu-Fang Zhang(张淑芳), Hai-Jun Luo(罗海军), Xing-Ming Long(龙兴明), Fang Wu(吴芳), Liang Fang(方亮), Da-Peng Wei(魏大鹏), Fan-Ming Meng(孟凡明), Bao-Shan Hu(胡宝山) Simulation on effect of metal/graphene hybrid transparent electrode on characteristics of GaN light emitting diodes 2017 Chin. Phys. B 26 104402

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Simulation on effect of metal/graphene hybrid transparent electrode on characteristics of GaN light emitting diodes

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