| INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
Prev
Next
|
|
|
Non-ideal effect in 4H—SiC bipolar junction transistor with double Gaussian-doped base |
| Yuan Lei (元磊)a, Zhang Yu-Ming (张玉明)a, Song Qing-Wen (宋庆文)a b, Tang Xiao-Yan (汤晓燕)a, Zhang Yi-Men (张义门)a |
a Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;
b School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, China |
|
|
|
|
Abstract The non-ideal effect of 4H–SiC bipolar junction transistor (BJT) with a double Gaussian-doped base is characterized and simulated in this paper. By adding a specific interface model between SiC and SiO2, the simulation results are in good agreement with the experiment data. An obvious early effect is found from the output characteristic. As the temperature rises, the early voltage increases, while the current gain gradually decreases, which is totally different from the scenario of silicon BJT. With the same effective Gummel number in the base region, the double Gaussian-doped base structure can realize higher current gain than the single base BJT due to the built-in electric field, whereas the early effect will be more salient. Besides, the emitter current crowding effect is also analyzed. Due to the low sheet resistance in the first highly-doped base epilayer, the 4H–BJT with a double base has more uniform emitter current density across the base-emitter junction, leading to better thermal stability.
|
Received: 01 December 2014
Revised: 30 December 2014
Accepted manuscript online:
|
|
PACS:
|
85.30.Pq
|
(Bipolar transistors)
|
| |
85.30.De
|
(Semiconductor-device characterization, design, and modeling)
|
| |
81.15.-z
|
(Methods of deposition of films and coatings; film growth and epitaxy)
|
|
| Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 60876061 and 61234006), the Natural Science Foundation of Shaanxi Province, China (Grant No. 2013JQ8012), and the Doctoral Fund of the Ministry of Education of China (Grant Nos. 20130203120017 and 20110203110010). |
Corresponding Authors:
Song Qing-Wen
E-mail: qwsong@xidian.edu.cn
|
| About author: 85.30.Pq; 85.30.De; 81.15.-z |
Cite this article:
Yuan Lei (元磊), Zhang Yu-Ming (张玉明), Song Qing-Wen (宋庆文), Tang Xiao-Yan (汤晓燕), Zhang Yi-Men (张义门) Non-ideal effect in 4H—SiC bipolar junction transistor with double Gaussian-doped base 2015 Chin. Phys. B 24 068502
|
| [1] |
Yuan H, Tang X Y, Zhang Y M, Zhang Y M, Song Q W, Yang F and Wu H 2014 Chin. Phys. B 23 057102
|
| [2] |
Chen S Z and Sheng K 2014 Chin. Phys. B 23 077201
|
| [3] |
Song Q W, Zhang Y M, Han J S, Tanner Philip, Dimitrijev Sima, Zhang Y M, Tang X Y and Guo H 2013 Chin. Phys. B 22 027302
|
| [4] |
Hiroki M, Tsunenobu K and Jun S 2011 IEEE Electron Dev. Lett. 32 841
|
| [5] |
Hiroki M, Takafumi O, Hiroki N, Tsunenobu K and Jun S 2012 IEEE Electron Dev. Lett. 33 1598
|
| [6] |
Zhang J H, Li X Q, Alexandrov P, Burke T and Zhao J H 2008 IEEE Electron Dev. Lett. 29 471
|
| [7] |
Kenichi N, Akihiko H, Yuki N, Kensuke I, Seiichi Y, Hideki H, Masashi S, Yusuke M, Masaaki S and Hiroaki I 2009 Phys. Status Solidi A 206 2457
|
| [8] |
Gerardo C L, Andrew J F, David L G and Jim R M 2014 IEEE Trans. Power Electron. 29 2474
|
| [9] |
Saeed S, Alberto C and Patrick W 2014 IEEE Trans. Power Electron. 29 2584
|
| [10] |
Zhang Q, Zhang Y M, Yuan L, Zhang Y M, Tang X Y and Song Q W 2012 Chin. Phys. B 21 088502
|
| [11] |
Kimoto T and Cooper J 2014 Fundamentals of Silicon Carbide Echnology: Growth, Characterization, Devices and Applications, Appendix A: Incomplete Dopant Ionization in 4H-SiC (New York: Wiley-IEEE Press)
|
| [12] |
Galeckas A, Linnros J, Grivickas V, Lindefelt U and Hallin C 1997 Appl. Phys. Lett. 71 3269
|
| [13] |
Lindefelt U 1998 J. Appl. Phys. 84 2628
|
| [14] |
Ruff M, Mitlehner H and Helbig R 1994 IEEE Trans. Electron Dev. 41 1040
|
| [15] |
Roschke M and Schwierz F 2001 IEEE Trans. Electron Dev. 48 1442
|
| [16] |
Buono B, Ghandi R, Domeij M, Malm B G, Zetterling C M and Ostling M 2010 IEEE Trans. Electron Dev. 57 704
|
| [17] |
Lee H S, Domeij M, Zetterling C M, Östling M, Allerstam F and Sveinbjörnsson E 2007 IEEE Electron Dev. Lett. 28 1007
|
| [18] |
ISE TCAD Release 10.0. Defining a Gaussian doping profile. P11.26
|
| [19] |
Niccoló R 2000 IEEE Trans. Electron Dev. 47 2340
|
| [20] |
Buono B, Ghandi R, Domeij M, Malm B G, Zetterling C M and Ostling M 2010 IEEE Trans. Electron Dev. 57 2664
|
| [21] |
Yan G, Huang A Q, Krishnaswami S, Agarwal A K and Scozzie C 2006 IPEMC 2006, CES/IEEE 5th International Power Electronics and Motion Control Conference (IEEE Cat. No. 06EX1405), 2006, Shanghai, China, p. 157
|
| [22] |
Baliga B J 2008 Fundamentals of Power Semiconductor Devices (New York: Springer) p. 53
|
| No Suggested Reading articles found! |
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
Cited |
|
|
|
|
Altmetric
|
|
blogs
Facebook pages
Wikipedia page
Google+ users
|
Online attention
Altmetric calculates a score based on the online attention an article receives. Each coloured thread in the circle represents a different type of online attention. The number in the centre is the Altmetric score. Social media and mainstream news media are the main sources that calculate the score. Reference managers such as Mendeley are also tracked but do not contribute to the score. Older articles often score higher because they have had more time to get noticed. To account for this, Altmetric has included the context data for other articles of a similar age.
View more on Altmetrics
|
|
|
