Estimation of enhanced low dose rate sensitivity mechanisms using temperature switching irradiation on gate-controlled lateral PNP transistor

doi:10.1088/1674-1056/27/3/036102

Abstract The mechanisms occurring when the switched temperature technique is applied, as an accelerated enhanced low dose rate sensitivity (ELDRS) test technique, are investigated in terms of a specially designed gate-controlled lateral PNP transistor (GLPNP) that used to extract the interface traps (Nit) and oxide trapped charges (Not). Electrical characteristics in GLPNP transistors induced by ⁶⁰Co gamma irradiation are measured in situ as a function of total dose, showing that generation of Nit in the oxide is the primary cause of base current variations for the GLPNP. Based on the analysis of the variations of Nit and Not, with switching the temperature, the properties of accelerated protons release and suppressed protons loss play critical roles in determining the increased Nit formation leading to the base current degradation with dose accumulation. Simultaneously the hydrogen cracking mechanisms responsible for additional protons release are related to the neutralization of Not extending enhanced Nit buildup. In this study the switched temperature irradiation has been employed to conservatively estimate the ELDRS of GLPNP, which provides us with a new insight into the test technique for ELDRS.

Keywords: ionizing radiation damage enhanced low dose rate sensitivity (ELDRS) switched temperature irradiation gate-controlled lateral PNP transistor (GLPNP)

Received: 04 August 2017
Revised: 27 November 2017
Accepted manuscript online:

PACS:	61.80.-x	(Physical radiation effects, radiation damage)
	61.80.Ed	(γ-ray effects)
	85.30.Pq	(Bipolar transistors)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. U1532261 and 1630141).

Corresponding Authors: Wu Lu
E-mail: luwu@ms.xjb.ac.cn

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Xiao-Long Li(李小龙), Wu Lu(陆妩), Xin Wang(王信), Xin Yu(于新), Qi Guo(郭旗), Jing Sun(孙静), Mo-Han Liu(刘默寒), Shuai Yao(姚帅), Xin-Yu Wei(魏昕宇), Cheng-Fa He(何承发) Estimation of enhanced low dose rate sensitivity mechanisms using temperature switching irradiation on gate-controlled lateral PNP transistor 2018 Chin. Phys. B 27 036102

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Estimation of enhanced low dose rate sensitivity mechanisms using temperature switching irradiation on gate-controlled lateral PNP transistor

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