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Chin. Phys. B, 2017, Vol. 26(8): 088502    DOI: 10.1088/1674-1056/26/8/088502

Three-dimensional simulation of fabrication process-dependent effects on single event effects of SiGe heterojunction bipolar transistor

Jin-Xin Zhang(张晋新)1, Chao-Hui He(贺朝会)2, Hong-Xia Guo(郭红霞)3, Pei Li(李培)2, Bao-Long Guo(郭宝龙)1, Xian-Xiang Wu(吴宪祥)1
1 School of Aerospace Science and Technology, Xidian University, Xi' an 710126, China;
2 School of Energy and Power Engineering, Xi'an Jiaotong University, Xi'an 710049, China;
3 Northwest Institution of Nuclear Technology, Xi'an 710024, China

The fabrication process dependent effects on single event effects (SEEs) are investigated in a commercial silicon-germanium heterojunction bipolar transistor (SiGe HBT) using three-dimensional (3D) TCAD simulations. The influences of device structure and doping concentration on SEEs are discussed via analysis of current transient and charge collection induced by ions strike. The results show that the SEEs representation of current transient is different from representation of the charge collection for the same process parameters. To be specific, the area of C/S junction is the key parameter that affects charge collection of SEE. Both current transient and charge collection are dependent on the doping of collector and substrate. The base doping slightly influences transient currents of base, emitter, and collector terminals. However, the SEEs of SiGe HBT are hardly affected by the doping of epitaxial base and the content of Ge.

Keywords:  SiGe HBT      single event effects      fabrication process dependence      3D simulation  
Received:  05 April 2017      Revised:  29 April 2017      Accepted manuscript online: 
PACS:  85.30.Pq (Bipolar transistors)  
  61.80.Az (Theory and models of radiation effects)  
  73.40.Lq (Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)  
  75.40.Mg (Numerical simulation studies)  

Project supported by the National Natural Science Foundation of China (Grant Nos. 61274106, 11175138, and 61601352).

Corresponding Authors:  Chao-Hui He     E-mail:
About author:  0.1088/1674-1056/26/8/

Cite this article: 

Jin-Xin Zhang(张晋新), Chao-Hui He(贺朝会), Hong-Xia Guo(郭红霞), Pei Li(李培), Bao-Long Guo(郭宝龙), Xian-Xiang Wu(吴宪祥) Three-dimensional simulation of fabrication process-dependent effects on single event effects of SiGe heterojunction bipolar transistor 2017 Chin. Phys. B 26 088502

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