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A C-band 55% PAE high gain two-stage power amplifier based on AlGaN/GaN HEMT |
| Zheng Jia-Xin (郑佳欣)a, Ma Xiao-Hua (马晓华)a, Lu Yang (卢阳)b, Zhao Bo-Chao (赵博超)b, Zhang Hong-He (张宏鹤)a, Zhang Meng (张濛)a, Cao Meng-Yi (曹梦逸)b, Hao Yue (郝跃)a b |
a School of Advanced Material and Nanotechnology, Xidian University, Xi'an 710071, China;
b School of Microelectronics, Xidian University, Xi'an 710071, China |
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Abstract A C-band high efficiency and high gain two-stage power amplifier based on AlGaN/GaN high electron mobility transistor (HEMT) is designed and measured in this paper. The input and output impedances for the optimum power-added efficiency (PAE) are determined at the fundamental and 2nd harmonic frequency (f0 and 2f0). The harmonic manipulation networks are designed both in the driver stage and the power stage which manipulate the second harmonic to a very low level within the operating frequency band. Then the inter-stage matching network and the output power combining network are calculated to achieve a low insertion loss. So the PAE and the power gain is greatly improved. In an operation frequency range of 5.4 GHz-5.8 GHz in CW mode, the amplifier delivers a maximum output power of 18.62 W, with a PAE of 55.15% and an associated power gain of 28.7 dB, which is an outstanding performance.
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Received: 02 June 2015
Revised: 29 June 2015
Accepted manuscript online:
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PACS:
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73.40.Kp
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(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
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84.60.Bk
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(Performance characteristics of energy conversion systems; figure of merit)
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84.30.Le
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(Amplifiers)
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84.40.-x
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(Radiowave and microwave (including millimeter wave) technology)
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| Fund: Project supported by the National Key Basic Research Program of China (Grant No. 2011CBA00606), Program for New Century Excellent Talents in University, China (Grant No. NCET-12-0915), and the National Natural Science Foundation of China (Grant No. 61334002). |
Corresponding Authors:
Ma Xiao-Hua
E-mail: xhma@xidian.edu.cn
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Cite this article:
Zheng Jia-Xin (郑佳欣), Ma Xiao-Hua (马晓华), Lu Yang (卢阳), Zhao Bo-Chao (赵博超), Zhang Hong-He (张宏鹤), Zhang Meng (张濛), Cao Meng-Yi (曹梦逸), Hao Yue (郝跃) A C-band 55% PAE high gain two-stage power amplifier based on AlGaN/GaN HEMT 2015 Chin. Phys. B 24 107305
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