AA bilayer graphene on Si-terminated SiO2 under electric field

doi:10.1088/1674-1056/23/2/026802

Abstract The AA-stacked bilayer graphene/α-SiO₂ (001) interfaces with Si terminated atoms are studied in the presence of an electric field F with different intensities by first principles. AA-stacked bilayer graphene is slightly mis-oriented on SiO₂ substrate without electric field and the band gap is 0.557 eV. However, as F increases, the AA-stacked bilayer graphene has its layers gradually vertically shifted with each other and, finally, transfers into AB-stacked bilayer graphene and the band gap reduces to 0.252 eV under 0.015 Hartree.

Keywords: interface graphene oxide

Received: 07 November 2012
Revised: 23 July 2013
Accepted manuscript online:

PACS:	68.43.Bc	(Ab initio calculations of adsorbate structure and reactions)
	68.43.Fg	(Adsorbate structure (binding sites, geometry))
	81.05.Uw
	73.21.Ac	(Multilayers)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 61176101), the Ph. D. Programs Foundation of the Ministry of Education of China (Grant No. 20120101120156), and the Fundamental Research Funds for the Central Universities, China (Grant No. 2012FZA4016).

Corresponding Authors: Wang Tao
E-mail: twang@zju.edu.cn

About author: 68.43.Bc; 68.43.Fg; 81.05.Uw; 73.21.Ac

Cite this article:

Liu Hai-Long (刘海龙), Liu Yan (刘艳), Wang Tao (汪涛), Ao Zhi-Min (敖志敏) AA bilayer graphene on Si-terminated SiO₂ under electric field 2014 Chin. Phys. B 23 026802

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AA bilayer graphene on Si-terminated SiO₂ under electric field