Lg=100 nm T-shaped gate AlGaN/GaN HEMTs on Si substrates with non-planar source/drain regrowth of highly-doped n+-GaN layer by MOCVD

doi:10.1088/1674-1056/23/12/128102

Abstract

High-performance AlGaN/GaN high electron mobility transistors (HEMTs) grown on silicon substrates by metal–organic chemical-vapor deposition (MOCVD) with a selective non-planar n-type GaN source/drain (S/D) regrowth are reported. A device exhibited a non-alloyed Ohmic contact resistance of 0.209 Ω·mm and a comprehensive transconductance (g_m) of 247 mS/mm. The current gain cutoff frequency f_T and maximum oscillation frequency f_MAX of 100-nm HEMT with S/D regrowth were measured to be 65 GHz and 69 GHz. Compared with those of the standard GaN HEMT on silicon substrate, the f_T and f_MAX is 50% and 52% higher, respectively.

Keywords: GaN HEMTs S/D (S/D) regrowth MOCVD

Received: 06 March 2014
Revised: 31 July 2014
Accepted manuscript online:

PACS:

81.05.Ea

(III-V semiconductors)

Fund:

Project supported by the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 61401373), the Fundamental Research Funds for Central Universities, China (Grant No. XDJK2013B004), and the Research Fund for the Doctoral Program of Southwest University, China (Grant No. SWU111030).

Corresponding Authors: Huang Jie, Li Ming
E-mail: jiehuang@swu.edu.cn;eeliming@sina.com

Cite this article:

Huang Jie (黄杰), Li Ming (黎明), Tang Chak-Wah (邓泽华), Lau Kei-May (刘纪美) L_g=100 nm T-shaped gate AlGaN/GaN HEMTs on Si substrates with non-planar source/drain regrowth of highly-doped n⁺-GaN layer by MOCVD 2014 Chin. Phys. B 23 128102


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Lg=100 nm T-shaped gate AlGaN/GaN HEMTs on Si substrates with non-planar source/drain regrowth of highly-doped n+-GaN layer by MOCVD

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L_g=100 nm T-shaped gate AlGaN/GaN HEMTs on Si substrates with non-planar source/drain regrowth of highly-doped n⁺-GaN layer by MOCVD