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Electron-mediated ferromagnetism in Fe-doped InP: Theory and experiment |
Dong Shan (董珊), Zhu Feng (朱峰) |
State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China |
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Abstract We report on the electron-mediated ferromagnetism in Fe-doped InP from both first-principles calculations and experiments. Theoretically, based on spin-polarized density functional theory within Heyd-Scuseria-Ernzerhof (HSE03) approach, we systematically investigate the magnetic properties of Fe-doped InP and predict the existence of electron-mediated ferromagnetism. Experimentally, by diffusing Fe into the n-type InP wafer with thermal annealing at 800 ℃, we observe room-temperature ferromagnetism in InP:Fe, which is in agreement with the theoretical prediction.
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Received: 13 January 2012
Revised: 11 March 2012
Accepted manuscript online:
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PACS:
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75.50.Pp
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(Magnetic semiconductors)
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71.55.-i
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(Impurity and defect levels)
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71.70.-d
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(Level splitting and interactions)
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Fund: Project supported by the National Natural Science Foundation of China (Grant No. 60925016). |
Corresponding Authors:
Dong Shan
E-mail: dongshan08@semi.ac.cn
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Cite this article:
Dong Shan (董珊), Zhu Feng (朱峰) Electron-mediated ferromagnetism in Fe-doped InP: Theory and experiment 2012 Chin. Phys. B 21 097502
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