| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Steady-state and transient electronic transport properties of β-(AlxGa1-x)2O3/Ga2O3 heterostructures: An ensemble Monte Carlo simulation |
| Yan Liu(刘妍)1, Ping Wang(王平)1,†, Ting Yang(杨婷)1, Qian Wu(吴茜)1, Yintang Yang(杨银堂)2, and Zhiyong Zhang(张志勇)3 |
1 State Key Laboratory of Integrated Service Networks, School of Telecommunications Engineering, Xidian University, Xi'an 710071, China;
2 Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China |
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Abstract The steady-state and transient electron transport properties of $\beta $-(Al$_{x}$Ga$_{1-x}$)$_{2}$O$_{3}$/Ga$_{2}$O$_{3}$ heterostructures were investigated by Monte Carlo simulation with the classic three-valley model. In particular, the electronic band structures were acquired by first-principles calculations, which could provide precise parameters for calculating the transport properties of the two-dimensional electron gas (2DEG), and the quantization effect was considered in the $\varGamma $ valley with the five lowest subbands. Wave functions and energy eigenvalues were obtained by iteration of the Schrödinger-Poisson equations to calculate the 2DEG scattering rates with five main scattering mechanisms considered. The simulated low-field electron mobilities agree well with the experimental results, thus confirming the effectiveness of our models. The results show that the room temperature electron mobility of the $\beta $-(Al$_{0.188}$Ga$_{0.812}$)$_{2}$O$_{3}$/Ga$_{2}$O$_{3}$ heterostructure at 10 kV$ \cdot$cm$^{-1}$ is approximately 153.669 cm$^{2}\cdot$V$^{-1}\cdot$s$^{-1}$, and polar optical phonon scattering would have a significant impact on the mobility properties at this time. The region of negative differential mobility, overshoot of the transient electron velocity and negative diffusion coefficients are also observed when the electric field increases to the corresponding threshold value or even exceeds it. This work offers significant parameters for the $\beta$-(Al$_{x}$Ga$_{1-x}$)$_{2}$O$_{3}$/Ga$_{2}$O$_{3}$ heterostructure that may benefit the design of high-performance $\beta$-(Al$_{x}$Ga$_{1-x}$)$_{2}$O$_{3}$/Ga$_{2}$O$_{3}$ heterostructure-based devices.
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Received: 26 February 2022
Revised: 19 May 2022
Accepted manuscript online: 24 May 2022
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PACS:
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73.40.-c
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(Electronic transport in interface structures)
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73.63.Hs
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(Quantum wells)
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74.25.Jb
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(Electronic structure (photoemission, etc.))
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| Fund: Project supported by the National Natural Science Foundation of China (Grant No. 61474090), the Key Research and Development Program of Shaanxi Province of China (Grant No. 2017ZDXM-GY-052), and the Fundamental Research Funds for the Central Universities (Grant No. 20109205456), and the Innovation Fund of Xidian University. |
Corresponding Authors:
Ping Wang
E-mail: pingwang@xidian.edu.cn
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Cite this article:
Yan Liu(刘妍), Ping Wang(王平), Ting Yang(杨婷), Qian Wu(吴茜), Yintang Yang(杨银堂), and Zhiyong Zhang(张志勇) Steady-state and transient electronic transport properties of β-(AlxGa1-x)2O3/Ga2O3 heterostructures: An ensemble Monte Carlo simulation 2022 Chin. Phys. B 31 117305
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