An AlGaN/GaN HEMT with reduced surface electric field and an improved breakdown voltage

doi:10.1088/1674-1056/21/8/086105

Abstract A reduced surface electric field in AlGaN/GaN high electron mobility transistor (HEMT) is investigated by employing a localized Mg-doped layer under the two-dimensional electron gas (2-DEG) channel as an electric field shaping layer. The electric field strength around the gate edge is effectively relieved and the surface electric field is distributed evenly as compared with those of HEMTs with conventional source-connected field plate and double field plate structures with the same device physical dimensions. Compared with the HEMTs with conventional source-connected field plate and double field plate, the HEMT with Mg-doped layer also shows that the breakdown location shifts from the surface of the gate edge to the bulk Mg-doped layer edge. By optimizing both the length of Mg-doped layer, L_m, and the doping concentration, a 5.5 times and 3 times the reduction in the peak electric field near the drain side gate edge is observed as compared with those of the HEMTs with source-connected field plate structure and double field plate structure, respectively. In a device with V_GS=-5 V, L_m=1.5 μm, a peak Mg doping concentration of 8× 10¹⁷ cm^-3 and a drift region length of 10 μm, the breakdown voltage is observed to increase from 560 V in a conventional device without field plate structure to over 900 V without any area overhead penalty.

Keywords: AlGaN/GaN HEMT reduced surface electric field Mg-doped layer breakdown voltage

Received: 15 December 2011
Revised: 14 February 2012
Accepted manuscript online:

PACS:	61.72.uj	(III-V and II-VI semiconductors)
	71.20.N
	51.50.+v	(Electrical properties)

Corresponding Authors: Xie Gang
E-mail: ngwt@vrg.utoronto.ca; xielyz@vrg.utoronto.ca

Cite this article:

Xie Gang (谢刚), Edward Xu, Niloufar Hashemi, Zhang Bo (张波), Fred Y. Fu, Wai Tung Ng An AlGaN/GaN HEMT with reduced surface electric field and an improved breakdown voltage 2012 Chin. Phys. B 21 086105

[1]	Ibbetson J P, Fini P T, Ness K D, DenBaars S P, Speck J S and Mishra U K 2000 Appl. Phys. Lett. 77 250
[2]	Nanjo T, Takeuchi M, Suita M, Oishi T, Abe Y, Tokuda Y and Aoyagi Y 2008 Appl. Phys. Lett. 92 263
[3]	Zhang J F, Mao W, Zhang J C and Hao Y 2008 Chin. Phys. B 17 689
[4]	Guo B Z, Gong N and Yu F Q 2008 Chin. Phys. B 17 290
[5]	Hong S K, Shim K H and Yang J W 2008 Electronic Lett. 44 1091
[6]	Xu C, Wang J, Chen H, Xu F, Dong Z, Hao Y and Wen C P. 2007 IEEE Electron Dev. Lett. 28 942
[7]	Choi Y H, Lim J Y, Cho K H, Kim Y S and Han M K 2009 Mater. Sci. Forum. 615 971
[8]	Ando Y, Okamoto Y, Miyamoto H, Nakayama T, Inoue T and Kuzuhara M 2003 IEEE Electron Dev. Lett. 24 289
[9]	Saito W, Takada Y, Kuraguchi M, Tsuda K, Omura I, Ogura T and Ohashi H 2003 IEEE Electron Dev. Lett. 50 2528
[10]	Hwang J D and Yang G H 2007 Appl. Surf. Sci. 253 4694
[11]	Whelan S, Kelly M J, Yan J and Fortunato G 2005 Phys. Status Solidi 2 2472
[12]	Cao X A, Wilson R G, Zolper J C, Pearton J S, Han J, Shul R J, Rieger D J, Singh R K, Fu M and Scarvepalli V 1999 J. Electron. Mater. 28 261
[13]	Li S Q, Wang L, Han Y J, Luo Y, Deng H Q, Qiu J S and Zhang J 2011 Acta Phys. Sin. 60 098107 (in Chinese)
[14]	Xie G, Zhang B, Fu F Y and Ng W T 2010 ISPSD, Hiroshima, Japan
[15]	www.crosslight.com, user's manual.
[16]	Chynoweth A G 1958 Phys. Rev. 109 1537

[1]	Design optimization of high breakdown voltage vertical GaN junction barrier Schottky diode with high-K/low-K compound dielectric structure Kuiyuan Tian(田魁元), Yong Liu(刘勇), Jiangfeng Du(杜江锋), and Qi Yu(于奇). Chin. Phys. B, 2023, 32(1): 017306.
[2]	A 4H-SiC trench MOSFET structure with wrap N-type pillar for low oxide field and enhanced switching performance Pei Shen(沈培), Ying Wang(王颖), and Fei Cao(曹菲). Chin. Phys. B, 2022, 31(7): 078501.
[3]	Lateral β-Ga₂O₃ Schottky barrier diode fabricated on (-201) single crystal substrate and its temperature-dependent current-voltage characteristics Pei-Pei Ma(马培培), Jun Zheng(郑军), Ya-Bao Zhang(张亚宝), Xiang-Quan Liu(刘香全), Zhi Liu(刘智), Yu-Hua Zuo(左玉华), Chun-Lai Xue(薛春来), and Bu-Wen Cheng(成步文). Chin. Phys. B, 2022, 31(4): 047302.
[4]	Fast-switching SOI-LIGBT with compound dielectric buried layer and assistant-depletion trench Chunzao Wang(王春早), Baoxing Duan(段宝兴), Licheng Sun(孙李诚), and Yintang Yang(杨银堂). Chin. Phys. B, 2022, 31(4): 047304.
[5]	High power-added-efficiency AlGaN/GaN HEMTs fabricated by atomic level controlled etching Xinchuang Zhang(张新创), Bin Hou(侯斌), Fuchun Jia(贾富春), Hao Lu(芦浩), Xuerui Niu(牛雪锐), Mei Wu(武玫), Meng Zhang(张濛), Jiale Du(杜佳乐), Ling Yang(杨凌), Xiaohua Ma(马晓华), and Yue Hao(郝跃). Chin. Phys. B, 2022, 31(2): 027301.
[6]	Modeling of high permittivity insulator structure with interface charge by charge compensation Zhi-Gang Wang(汪志刚), Yun-Feng Gong(龚云峰), and Zhuang Liu(刘壮). Chin. Phys. B, 2022, 31(2): 028501.
[7]	Fluorine-plasma treated AlGaN/GaN high electronic mobility transistors under off-state overdrive stress Dongyan Zhao(赵东艳), Yubo Wang(王于波), Yanning Chen(陈燕宁), Jin Shao(邵瑾), Zhen Fu(付振), Fang Liu(刘芳), Yanrong Cao(曹艳荣), Faqiang Zhao(赵法强), Mingchen Zhong(钟明琛), Yasong Zhang(张亚松), Maodan Ma(马毛旦), Hanghang Lv(吕航航), Zhiheng Wang(王志恒), Ling Lv(吕玲), Xuefeng Zheng(郑雪峰), and Xiaohua Ma(马晓华). Chin. Phys. B, 2022, 31(11): 117301.
[8]	A novel Si-rich SiN bilayer passivation with thin-barrier AlGaN/GaN HEMTs for high performance millimeter-wave applications Zhihong Chen(陈治宏), Minhan Mi(宓珉瀚), Jielong Liu(刘捷龙), Pengfei Wang(王鹏飞), Yuwei Zhou(周雨威), Meng Zhang(张濛), Xiaohua Ma(马晓华), and Yue Hao(郝跃). Chin. Phys. B, 2022, 31(11): 117105.
[9]	Terminal-optimized 700-V LDMOS with improved breakdown voltage and ESD robustness Jie Xu(许杰), Nai-Long He(何乃龙), Hai-Lian Liang(梁海莲), Sen Zhang(张森), Yu-De Jiang(姜玉德), and Xiao-Feng Gu(顾晓峰). Chin. Phys. B, 2021, 30(6): 067303.
[10]	Design and simulation of AlN-based vertical Schottky barrier diodes Chun-Xu Su(苏春旭), Wei Wen(温暐), Wu-Xiong Fei(费武雄), Wei Mao(毛维), Jia-Jie Chen(陈佳杰), Wei-Hang Zhang(张苇杭), Sheng-Lei Zhao(赵胜雷), Jin-Cheng Zhang(张进成), and Yue Hao(郝跃). Chin. Phys. B, 2021, 30(6): 067305.
[11]	A super-junction SOI-LDMOS with low resistance electron channel Wei-Zhong Chen(陈伟中), Yuan-Xi Huang(黄元熙), Yao Huang(黄垚), Yi Huang(黄义), and Zheng-Sheng Han(韩郑生). Chin. Phys. B, 2021, 30(5): 057303.
[12]	Improved 4H-SiC UMOSFET with super-junction shield region Pei Shen(沈培), Ying Wang(王颖), Xing-Ji Li(李兴冀), Jian-Qun Yang(杨剑群), Cheng-Hao Yu(于成浩), and Fei Cao(曹菲). Chin. Phys. B, 2021, 30(5): 058502.
[13]	Novel Si/SiC heterojunction lateral double-diffused metal-oxide semiconductor field-effect transistor with p-type buried layer breaking silicon limit Baoxing Duan(段宝兴), Xin Huang(黄鑫), Haitao Song (宋海涛), Yandong Wang(王彦东), and Yintang Yang(杨银堂). Chin. Phys. B, 2021, 30(4): 048503.
[14]	Novel fast-switching LIGBT with P-buried layer and partial SOI Haoran Wang(王浩然), Baoxing Duan(段宝兴), Licheng Sun(孙李诚), and Yintang Yang(杨银堂). Chin. Phys. B, 2021, 30(2): 027302.
[15]	Impact of oxygen in electrical properties and hot-carrier stress-induced degradation of GaN high electron mobility transistors Lixiang Chen(陈丽香), Min Ma(马敏), Jiecheng Cao(曹杰程), Jiawei Sun(孙佳惟), Miaoling Que(阙妙玲), and Yunfei Sun(孙云飞). Chin. Phys. B, 2021, 30(10): 108502.

No Suggested Reading articles found!

Viewed

Full text

Abstract

Cited

Metrics
Related Articles

An AlGaN/GaN HEMT with reduced surface electric field and an improved breakdown voltage

Cite this article:

Online attention