Surface oxidation of vanadium dioxide films prepared by radio frequency magnetron sputtering
Wang Xue-Jin(王学进)a), Liang Chun-Jun(梁春军)b), Guan Kang-Ping(管康萍)b), Li De-Hua(李德华)c), Nie Yu-Xin(聂玉昕)c), Zhu Shi-Oiu(朱世秋)a), Huang Feng(黄峰)a), Zhang Wei-Wei(张葳葳)a), and Cheng Zheng-Wei(成正维)b)
a College of Science, China Agricultural University, Beijing 100083, China; bSchool of Science, Beijing Jiaotong University, Beijing 100044, China; cLaboratory of Optical Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
Abstract This paper reports that the thermochromic vanadium dioxide films were deposited on various transparent substrates by radio frequency magnetron sputtering, and then aged under circumstance for years. Samples were characterized with several different techniques such as x-ray diffraction, x-ray photoelectron spectroscopy, and Raman, when they were fresh from sputter chamber and aged after years, respectively, in order to determine their structure and composition. It finds that a small amount of sodium occurred on the surface of vanadium dioxide films, which was probably due to sodium ion diffusion from soda-lime glass when sputtering was performed at high substrate temperature. It also finds that aging for years significantly affected the nonstoichiometry of vanadium dioxide films, thus inducing much change in Raman modes.
Received: 27 December 2007
Revised: 17 February 2008
Accepted manuscript online:
Fund: Project supported by the National
Natural Science Foundation of China (Grant No 60776039) and China
Agricultural University
Foundation (Grant No 2007037).
Cite this article:
Wang Xue-Jin(王学进), Liang Chun-Jun(梁春军), Guan Kang-Ping(管康萍), Li De-Hua(李德华), Nie Yu-Xin(聂玉昕), Zhu Shi-Oiu(朱世秋), Huang Feng(黄峰), Zhang Wei-Wei(张葳葳), and Cheng Zheng-Wei(成正维) Surface oxidation of vanadium dioxide films prepared by radio frequency magnetron sputtering 2008 Chin. Phys. B 17 3512
Effects of preparation parameters on growth and properties of β-Ga2O3 film Zi-Hao Chen(陈子豪), Yong-Sheng Wang(王永胜), Ning Zhang(张宁), Bin Zhou(周兵), Jie Gao(高洁), Yan-Xia Wu(吴艳霞), Yong Ma(马永), Hong-Jun Hei(黑鸿君), Yan-Yan Shen(申艳艳), Zhi-Yong He(贺志勇), and Sheng-Wang Yu(于盛旺). Chin. Phys. B, 2023, 32(1): 017301.
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