| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Effect of thickness of antimony selenide film on its photoelectric properties and microstructure |
| Xin-Li Liu(刘欣丽)1,3,5, Yue-Fei Weng(翁月飞)1,3,5, Ning Mao(毛宁)1,3,5, Pei-Qing Zhang(张培晴)2,3,5, Chang-Gui Lin(林常规)2,3,5, Xiang Shen(沈祥)1,3,4,5, Shi-Xun Dai(戴世勋)2,3,5, and Bao-An Song(宋宝安)1,3,5,† |
1 Faculty of Electrical Engineering and Computer Science, Ningbo University, Ningbo 315211, China;
2 The Research Institute of Advanced Technologies, Ningbo University, Ningbo 315211, China;
3 Key Laboratory of Photoelectric Detecting Materials and Devices of Zhejiang Province, Ningbo 315211, China;
4 Ningbo Institute of Oceanography, Ningbo University, Ningbo 315211, China;
5 Engineering Research Center for Advanced Infrared Photoelectric Materials and Devices of Zhejiang Province, Ningbo 315211, China |
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Abstract Antimony selenide (Sb2Se3) films are widely used in phase change memory and solar cells due to their stable switching effect and excellent photovoltaic properties. These properties of the films are affected by the film thickness. A method combining the advantages of Levenberg-Marquardt method and spectral fitting method (LM-SFM) is presented to study the dependence of refractive index (RI), absorption coefficient, optical band gap, Wemple-DiDomenico parameters, dielectric constant and optical electronegativity of the Sb2Se3 films on their thickness. The results show that the RI and absorption coefficient of the Sb2Se3 films increase with the increase of film thickness, while the optical band gap decreases with the increase of film thickness. Finally, the reasons why the optical and electrical properties of the film change with its thickness are explained by x-ray diffractometer (XRD), energy dispersive x-ray spectrometer (EDS), Mott-Davis state density model and Raman microstructure analysis.
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Received: 19 April 2022
Revised: 15 July 2022
Accepted manuscript online: 05 August 2022
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PACS:
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78.20.Ci
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(Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity))
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78.20.-e
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(Optical properties of bulk materials and thin films)
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78.20.Bh
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(Theory, models, and numerical simulation)
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| Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 62075109, 62135011, 62075107, and 61935006) and K. C. Wong Magna Fund in Ningbo University. |
Corresponding Authors:
Bao-An Song
E-mail: songbaoan@nbu.edu.cn
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Cite this article:
Xin-Li Liu(刘欣丽), Yue-Fei Weng(翁月飞), Ning Mao(毛宁), Pei-Qing Zhang(张培晴), Chang-Gui Lin(林常规), Xiang Shen(沈祥), Shi-Xun Dai(戴世勋), and Bao-An Song(宋宝安) Effect of thickness of antimony selenide film on its photoelectric properties and microstructure 2023 Chin. Phys. B 32 027802
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