Please wait a minute...
Chin. Phys. B, 2021, Vol. 30(8): 086801    DOI: 10.1088/1674-1056/abe22d

Effect of Mo doping on phase change performance of Sb2Te3

Wan-Liang Liu(刘万良)1,2, Ying Chen(陈莹)1,2, Tao Li(李涛)1,2, Zhi-Tang Song(宋志棠)1, and Liang-Cai Wu(吴良才)3,4,†
1 State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;
2 University of Chinese Academy of Sciences, Beijing 100049, China;
3 College of Science, Donghua University, Shanghai 201620, China;
4 Member of Magnetic Confinement Fusion Research Center, Ministry of Education, China
Abstract  Mo, as a dopant, is doped into SbTe to improve its thermal stability. It is shown in this paper that the Mo-doped Sb2Te3 (Mo0.26Sb2Te3, MST) material possesses phase change memory (PCM) applications. MST has better thermal stability than Sb2Te3(ST) and will crystallize only when the annealing temperature is higher than 250 ℃. With the good thermal stability, MST-based PCM cells have a fast crystallization time of 6 ns. Furthermore, endurance up to 4×105 cycles with a resistance ratio of more than one order of magnitude makes MST a promising candidate for PCM applications.
Keywords:  phase-change memory      Sb2Te3      thin films      nanocomposites  
Received:  15 December 2020      Revised:  28 January 2021      Accepted manuscript online:  02 February 2021
PACS: (Metals and alloys)  
  68.37.Yz (X-ray microscopy)  
  68.60.Dv (Thermal stability; thermal effects)  
Fund: Project supported by the National Key Research and Development Program of China (Grant Nos. 2017YFB0701703 and 2017YFA0206101), the National Natural Science Foundation of China (Grant No. 61874151), and the Science and Technology Council of Shanghai, China (Grant Nos. 19JC1416801 and 19JC1416802).
Corresponding Authors:  Liang-Cai Wu     E-mail:

Cite this article: 

Wan-Liang Liu(刘万良), Ying Chen(陈莹), Tao Li(李涛), Zhi-Tang Song(宋志棠), and Liang-Cai Wu(吴良才) Effect of Mo doping on phase change performance of Sb2Te3 2021 Chin. Phys. B 30 086801

[1] Fujimori S, Yagi S, Yamazaki H and Funakoshi N 1988 J. Appl. Phys. 64 1000
[2] Friedrich I, Weidenhof V, Njoroge W, Franz P and Wuttig M 2000 J. Appl. Phys. 87 4130
[3] Wuttig, M 2005 Nat. Mater. 4 265
[4] Wuttig M and Yamada N 2007 Nat. Mater. 6 824
[5] Yin Y, Sone H and Hosaka S 2007 J. Appl. Phys. 102 064503
[6] Zhou X L, Wu L C, Song Z T, Rao F, Liu B, Yao D N, Yin W J, Li J T, Feng S L and Chen B 2009 Appl. Phys Express 2 091401
[7] Chen N K and Li X B 2019 Chin. Phys. B 28 104202
[8] Liu B, Liu W L, Li Z, Li K Q, Wu L C, Zhou J, Song Z T and Sun Z M 2020 ACS Appl. Mater. Interfaces 12 20672
[9] Chang C C, Kao K F, Tsai M J, Yew T R and Chin T S 2011 J. Nanosci Nanotechnol. 11 12
[10] Peng C, Song Z T, Rao F, Wu L C, Zhu M, Song H J, Zhou X L, Yao D N, Yang P X and Chu J H 2011 Appl. Phys. Lett. 4 99
[11] Sun Z M, Zhou J, Mao H K and Ahuja R 2012 PNAS 109 5948
[12] Zhang B, Zhang W, Shen Z J, Chen Y J, Li J X, Zhang S B, Zhang Z, Wuttig M, Mazzarello R and Ma E 2016 Appl. Phys. Lett. 108 191902
[13] Zhou X L, Kalikka J, Ji X L, Wu L C, Song Z T and Simpson R E 2016 Adv. Mater. 28 3007
[14] Rao F, Ding K Y, Zhou Y X, Zheng Y H, Xia M J, Lv S L, Song Z T, Feng S L, Ronneberger I and Mazzarello R 2017 Science 358 1423
[15] Liu W L, Wu L C, Li T, Song Z T, Shi J J, Zhang J and Feng S 2018 Appl. Phys. Express 11 041401
[16] Meng Y, Behera J K, Wen S, Simpson R E, Shi J J, Wu L C, Song Z T, Wei J S and Wang Y 2018 Adv. Opt. Mater. 6 1800360
[1] Migration of weakly bonded oxygen atoms in a-IGZO thin films and the positive shift of threshold voltage in TFTs
Chen Wang(王琛), Wenmo Lu(路文墨), Fengnan Li(李奉南), Qiaomei Luo(罗巧梅), and Fei Ma(马飞). Chin. Phys. B, 2022, 31(9): 096101.
[2] Anomalous strain effect in heteroepitaxial SrRuO3 films on (111) SrTiO3 substrates
Zhenzhen Wang(王珍珍), Weiheng Qi(戚炜恒), Jiachang Bi(毕佳畅), Xinyan Li(李欣岩), Yu Chen(陈雨), Fang Yang(杨芳), Yanwei Cao(曹彦伟), Lin Gu(谷林), Qinghua Zhang(张庆华), Huanhua Wang(王焕华), Jiandi Zhang(张坚地), Jiandong Guo(郭建东), and Xiaoran Liu(刘笑然). Chin. Phys. B, 2022, 31(12): 126801.
[3] Structural, magnetic, and dielectric properties of Ni-Zn ferrite and Bi2O3 nanocomposites prepared by the sol-gel method
Jinmiao Han(韩晋苗), Li Sun(孙礼), Ensi Cao(曹恩思), Wentao Hao(郝文涛), Yongjia Zhang(张雍家), and Lin Ju(鞠林). Chin. Phys. B, 2021, 30(9): 096102.
[4] Gas sensor using gold doped copper oxide nanostructured thin films as modified cladding fiber
Hussein T. Salloom, Rushdi I. Jasim, Nadir Fadhil Habubi, Sami Salman Chiad, M Jadan, and Jihad S. Addasi. Chin. Phys. B, 2021, 30(6): 068505.
[5] Molecular beam epitaxy growth of iodide thin films
Xinqiang Cai(蔡新强), Zhilin Xu(徐智临), Shuai-Hua Ji(季帅华), Na Li(李娜), and Xi Chen(陈曦). Chin. Phys. B, 2021, 30(2): 028102.
[6] Synthesis and thermoelectric properties of Bi-doped SnSe thin films
Jun Pang(庞军), Xi Zhang(张析), Limeng Shen(申笠蒙), Jiayin Xu(徐家胤), Ya Nie(聂娅), and Gang Xiang(向钢). Chin. Phys. B, 2021, 30(11): 116302.
[7] Scalable fabrication of Bi2O2Se polycrystalline thin film for near-infrared optoelectronic devices applications
Bin Liu(刘斌) and Hong Zhou(周洪). Chin. Phys. B, 2021, 30(10): 106803.
[8] Structural and optical characteristic features of RF sputtered CdS/ZnO thin films
Ateyyah M Al-Baradi, Fatimah A Altowairqi, A A Atta, Ali Badawi, Saud A Algarni, Abdulraheem S A Almalki, A M Hassanien, A Alodhayb, A M Kamal, M M El-Nahass. Chin. Phys. B, 2020, 29(8): 080702.
[9] Thermal stability of magnetron sputtering Ge-Ga-S films
Lei Niu(牛磊), Yimin Chen(陈益敏), Xiang Shen(沈祥), Tiefeng Xu(徐铁峰). Chin. Phys. B, 2020, 29(8): 087803.
[10] Optical and electrical properties of InGaZnON thin films
Jian Ke Yao(姚建可), Fan Ye(叶凡), Ping Fan(范平). Chin. Phys. B, 2020, 29(1): 018105.
[11] Influence of low-temperature sulfidation on the structure of ZnS thin films
Shuzhen Chen(陈书真), Ligang Song(宋力刚), Peng Zhang(张鹏), Xingzhong Cao(曹兴忠), Runsheng Yu(于润升), Baoyi Wang(王宝义), Long Wei(魏龙), Rengang Zhang(张仁刚). Chin. Phys. B, 2019, 28(2): 024214.
[12] Unconventional phase transition of phase-change-memory materials for optical data storage
Nian-Ke Chen(陈念科), Xian-Bin Li(李贤斌). Chin. Phys. B, 2019, 28(10): 104202.
[13] Electrical transport and optical properties of Cd3As2 thin films
Yun-Kun Yang(杨运坤), Fa-Xian Xiu(修发贤), Feng-Qiu Wang(王枫秋), Jun Wang(王军), Yi Shi(施毅). Chin. Phys. B, 2019, 28(10): 107502.
[14] Thickness dependent manipulation of uniaxial magnetic anisotropy in Fe-thin films by oblique deposition
Qeemat Gul, Wei He(何为), Yan Li(李岩), Rui Sun(孙瑞), Na Li(李娜), Xu Yang(杨旭), Yang Li(李阳), Zi-Zhao Gong(弓子召), ZongKai Xie(谢宗凯), Xiang-Qun Zhang(张向群), Zhao-Hua Cheng(成昭华). Chin. Phys. B, 2018, 27(9): 097504.
[15] Silica encapsulated ZnO quantum dot-phosphor nanocomposites: Sol-gel preparation and white light-emitting device application
Ya-Chuan Liang(梁亚川), Kai-Kai Liu(刘凯凯), Ying-Jie Lu(卢英杰), Qi Zhao(赵琪), Chong-Xin Shan(单崇新). Chin. Phys. B, 2018, 27(7): 078102.
No Suggested Reading articles found!