Abstract This paper studies systematically the drain current collapse in AlGaN/GaN metal--oxide--semiconductor high electron mobility transistors (MOS-HEMTs) by applying pulsed stress to the device. Low-temperature layer of A12O3 ultrathin film used as both gate dielectric and surface passivation layer was deposited by atomic layer deposition (ALD). For HEMT, gate turn-on pulses induced large current collapse. However, for MOS-HEMT, no significant current collapse was found in the gate turn-on pulsing mode with different pulse widths, indicating the good passivation effect of ALD A12O3. A small increase in Idd in the drain pulsing mode is due to the relieving of self-heating effect. The comparison of synchronously dynamic pulsed Idd-Vds characteristics of HEMT and MOS-HEMT further demonstrated the good passivation effect of ALD A12O3.
Received: 26 August 2007
Revised: 10 October 2007
Accepted manuscript online:
Fund: Project supported by NSFC (Grant No
60736033) and National 973 Basic
Research Project (Grant No 51327020301).
Cite this article:
Yue Yuan-Zheng(岳远征), Hao Yue(郝跃), Zhang Jin-Cheng(张进城), Feng Qian(冯倩), Ni Jin-Yu(倪金玉), and Ma Xiao-Hua(马晓华) A study on Al2O3 passivation in GaN MOS-HEMT by pulsed stress 2008 Chin. Phys. B 17 1405
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