High-density and narrow size-distribution InAs quantum dots formed by a modified two-step growth
Huang She-Song(黄社松)a)†, Niu Zhi-Chuan(牛智川)a), Zhan Feng(詹锋)b), Ni Hai-Qiao(倪海桥)a), Zhao Huan(赵欢)a), Wu Dong-Hai(吴东海)a), and Sun Zheng(孙征)a)
a State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; b The Key Laboratory of Beam Technology and Material Modification of Ministry of Education, Beijing Normal University, Beijing 100875, China
Abstract We develop a modified two-step method of growing high-density and narrow size-distribution InAs/GaAs quantum dots (QDs) by molecular beam epitaxy. In the first step, high-density small InAs QDs are formed by optimizing the continuous deposition amount. In the second step, deposition is carried out with a long growth interruption for every 0.1 InAs monolayer. Atomic force microscope images show that the high-density ($\sim $5.9$\times $10$^{10}$ cm$^{ - 2})$ good size-uniformity InAs QDs are achieved. The strong intensity and narrow linewidth (27.7 meV) of the photoluminescence spectrum show that the QDs grown in this two-step method have a good optical quality.
Fund: Project supported by the National
Natural Science Foundation of China (Grant No 60625405), and the
Special Foundation for State Major Basic Research Program of China
(Grant No 2006CB921504).
Cite this article:
Huang She-Song(黄社松), Niu Zhi-Chuan(牛智川), Zhan Feng(詹锋), Ni Hai-Qiao(倪海桥), Zhao Huan(赵欢), Wu Dong-Hai(吴东海), and Sun Zheng(孙征) High-density and narrow size-distribution InAs quantum dots formed by a modified two-step growth 2008 Chin. Phys. B 17 323
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