Chin. Phys. B
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Chin. Phys. B  2018, Vol. 27 Issue (4): 047202    DOI: 10.1088/1674-1056/27/4/047202
SPECIAL TOPIC—Recent advances in thermoelectric materials and devices Current Issue| Next Issue| Archive| Adv Search |
Band engineering and precipitation enhance thermoelectric performance of SnTe with Zn-doping
Zhiyu Chen(陈志禹)1, Ruifeng Wang(王瑞峰)2,3, Guoyu Wang(王国玉)2,3, Xiaoyuan Zhou(周小元)4, Zhengshang Wang(王正上)1, Cong Yin(尹聪)1, Qing Hu(胡庆)1, Binqiang Zhou(周斌强)5, Jun Tang(唐军)1,6, Ran Ang(昂然)1,6
1. Key Laboratory of Radiation Physics and Technology, Ministry of Education, Institute of Nuclear Science and Technology, Sichuan University, Chengdu 610064, China;
2. Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing 400714, China;
3. University of Chinese Academy of Sciences, Beijing 100190, China;
4. College of Physics, Chongqing University, Chongqing 401331, China;
5. School of Materials Science and Engineering, Tongji University, Shanghai 201804, China;
6. Institute of New Energy and Low-Carbon Technology, Sichuan University, Chengdu 610065, China

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