Chin. Phys. B
Citation Search Quick Search
Chin. Phys. B  2017, Vol. 26 Issue (3): 038504    DOI: 10.1088/1674-1056/26/3/038504
TOPICAL REVIEW---2D materials: physics and device applications Current Issue| Next Issue| Archive| Adv Search |
Photodetectors based on junctions of two-dimensional transition metal dichalcogenides
Xia Wei(魏侠)1, Fa-Guang Yan(闫法光)1, Chao Shen(申超)1, Quan-Shan Lv(吕全山)1, Kai-You Wang(王开友)1,2
1 State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
2 College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Science, Beijing 100049, China

Copyright © the Chinese Physical Society
Address: Institute of Physics, Chinese Academy of Sciences, P. O. Box 603,Beijing 100190 China(100190)
Tel: 010-82649026   Fax: 010-82649027   E-Mail: cpb@aphy.iphy.ac.cn
Supported by Beijing Magtech Co. Ltd. Tel: 86-010-62662699 E-mail: support@magtech.com.cn