Enhanced near-infrared responsivity of silicon photodetector by the impurity photovoltaic effect

doi:10.1088/1674-1056/24/4/048501

Abstract The near-infrared responsivity of a silicon photodetector employing the impurity photovoltaic (IPV) effect is investigated with a numerical method. The improvement of the responsivity can reach 0.358 A/W at a wavelength of about 1200 nm, and its corresponding quantum efficiency is 41.1%. The origin of the enhanced responsivity is attributed to the absorption of sub-bandgap photons, which results in the carrier transition from the impurity energy level to the conduction band. The results indicate that the IPV effect may provide a general approach to enhancing the responsivity of photodetectors.

Keywords: impurity photovoltaic effect responsivity photodetector

Received: 27 September 2014
Revised: 04 December 2014
Accepted manuscript online:

PACS:	85.30.De	(Semiconductor-device characterization, design, and modeling)
	88.30.gg	(Design and simulation)
	85.60.Gz	(Photodetectors (including infrared and CCD detectors))

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61464007, 61306084, and 51361022), the Postdoctoral Science Foundation of Jiangxi Province, China (Grant No. 2014KY32), and the Natural Science Foundation of Jiangxi Province, China (Grant No. 20122BAB202002).

Corresponding Authors: Yuan Ji-Ren, Zhou Lang
E-mail: yuanjiren@ncu.edu.cn;lzhou@ncu.edu.cn

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Yuan Ji-Ren (袁吉仁), Huang Hai-Bin (黄海宾), Deng Xin-Hua (邓新华), Liang Xiao-Jun (梁晓军), Zhou Nai-Gen (周耐根), Zhou Lang (周浪) Enhanced near-infrared responsivity of silicon photodetector by the impurity photovoltaic effect 2015 Chin. Phys. B 24 048501

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Enhanced near-infrared responsivity of silicon photodetector by the impurity photovoltaic effect

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