Influence of reaction parameters on synthesis of high-quality single-layer graphene on Cu using chemical vapor deposition

doi:10.1088/1674-1056/23/9/096803

Abstract Large-area monolayer graphene samples grown on polycrystalline copper foil by thermal chemical vapor deposition with differing CH₄ flux and growth time are investigated by Raman spectra, scanning electron microscopy, atomic force microscopy, and scanning tunneling microscopy. The defects, number of layers, and quality of graphene are shown to be controllable through tuning the reaction conditions: ideally to 2-3 sccm CH₄ for 30 minutes.

Keywords: graphene chemical vapor deposition Raman spectra

Received: 23 April 2014
Revised: 06 May 2014
Accepted manuscript online:

PACS:	68.65.Pq	(Graphene films)
	81.15.Gh	(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
	78.30.-j	(Infrared and Raman spectra)

Fund: Project supported by the National Basic Research Program of China (Grant Nos. 2013CB933604, 2010CB923004, and 2009CB929103), the National Natural Science Foundation of China, and the Chinese Academy of Sciences.

Corresponding Authors: Gao Hong-Jun
E-mail: hjgao@iphy.ac.cn

Cite this article:

Yang He (杨贺), Shen Cheng-Min (申承民), Tian Yuan (田园), Wang Gao-Qiang (王高强), Lin Shao-Xiong (林少雄), Zhang Yi (张一), Gu Chang-Zhi (顾长志), Li Jun-Jie (李俊杰), Gao Hong-Jun (高鸿钧) Influence of reaction parameters on synthesis of high-quality single-layer graphene on Cu using chemical vapor deposition 2014 Chin. Phys. B 23 096803

[1]	Allen M J, Tung V C and Kaner R B 2010 Chem. Rev. 110 132
[2]	Geim A K and Novoselov K S 2007 Nat. Mater. 6 183
[3]	Jiang Z, Zhang Y, Tan Y W, Stormer H L and Kim P 2007 Solid State Commun. 143 14
[4]	Xu D, Ivan S, Fabian D, Adina L and Eva Y A 2009 Nature 462 192
[5]	Lee C G, Wei X D, Kysar J W and Hone J 2008 Science 321 385
[6]	Novoselov K S, Geim A K, Morozov S V, Jiang D, Zhang Y, Dubonos S V, Grigorieva I V and Firsov A A 2004 Science 306 666
[7]	Balandin A A, Ghosh S, Bao W Z, Calizo I, Teweldebrhan D, Miao F and Lau C N 2008 Nano Lett. 8 902
[8]	Bolotina K I, Sikes K J, Jiang Z, Klima M, Fudenberg G, Hone J, Kim P and Stormer H L 2008 Solid State Commun. 146 351
[9]	Xu D, Ivan S, Anthony B and Eva Y A 2008 Nat. Nanotechnol. 3 491
[10]	Berger C, Song Z M, Li X B, Wu X S, Brown N, Naud C, Mayou D, Li T B, Hass J, Marchenkov A N, Conrad E H, First P N and Heer W A 2006 Science 312 1191
[11]	Mao J H, Huang L, Pan Y, Gao M, He J F, Zhou H T, Guo H M, Tian Y, Zou Q, Zhang L Z, Zhang H G, Wang Y L, Du S X, Zhou X J, Neto A H C and Gao H J 2012 Appl. Phys. Lett. 100 093101
[12]	Pan Y, Zhang H G, Shi D X, Sun J T, Du S X, Liu F and Gao H J 2009 Adv. Mater. 21 2777
[13]	Yang W, Chen G R, Shi Z W, Liu C C, Zhang L C, Xie G B, Cheng M, Wang D M, Yang R, Shi D X, Watanabe K J, Taniguchi T, Yao Y G, Zhang Y B and Zhang G Y 2013 Nat. Mater. 12 792
[14]	Huang L, Pan Y, Pan L D, Gao M, Xu W X, Que Y D, Zhou H T, Wang Y L, Du S X and Gao H J 2011 Appl. Phys. Lett. 99 162107
[15]	Li X S, Cai W W, An J H, Kim S, Nah J, Yang D X, Piner R, Velamakanni A, Jung I, Tutuc E, Banerjee S K, Colombo L and Roff R S 2009 Science 324 1312
[16]	Wang X B, You H J, Liu F M, Li M J, Wan L, Li S Q, Li Q, Xu Y, Tian R, Yu Z Y, Xiang D and Cheng J 2009 Chem. Vapor Deposition 15 53
[17]	Pan Y, Gao M, Huang L, Liu F and Gao H J 2009 Appl. Phys. Lett. 95 093106
[18]	Yu Q K, Lian J, Siriponglert S, Li H, Chen Y P and Pei S S 2008 Appl. Phys. Lett. 93 113103
[19]	Bhaviripudi S, Jia X T, Dresselhaus M S and Kong J 2010 Nano Lett. 10 4128
[20]	Gao L B, Ren W C, Zhao J P, Ma L P, Chen Z P and Cheng H M 2010 Appl. Phys. Lett. 97 183109
[21]	Wu B, Geng D C, Guo Y L, Huang L P, Xue Y Z, Zheng J, Chen J Y, Yu G, Liu Y Q, Jiang L and Hu W P 2011 Adv. Mater. 23 3522
[22]	Li X S, Zhu Y W, Cai W W, Borysiak M, Han B Y, Chen D, Piner R D, Colombo L and Ruoff R S 2009 Nano Lett. 9 4359
[23]	Li X S, Cai W W, Colombo L and Ruoff R S 2009 Nano Lett. 9 4268
[24]	Ni Z H, Wang H M, Ma Y, Kasim J, Wu Y H and Shen Z X 2008 ACS Nano 2 1033
[25]	Berciaud S, Ryu S, Brus L E and Heinz T F 2009 Nano Lett. 9 346

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Influence of reaction parameters on synthesis of high-quality single-layer graphene on Cu using chemical vapor deposition

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