Characterization of deep acceptor level in as-grown ZnO thin film by molecular beam epitaxy

doi:10.1088/1674-1056/23/9/097101

Abstract We report deep level transient spectroscopy results from ZnO layers grown on silicon by molecular beam epitaxy (MBE). The hot probe measurements reveal mixed conductivity in the as-grown ZnO layers, and the current-voltage (I-V) measurements demonstrate a good quality p-type Schottky device. A new deep acceptor level is observed in the ZnO layer having activation energy of 0.49± 0.03 eV and capture cross-section of 8.57×10^-18 cm². Based on the results from Raman spectroscopy, photoluminescence, and secondary ion mass spectroscopy (SIMS) of the ZnO layer, the observed acceptor trap level is tentatively attributed to a nitrogen-zinc vacancy complex in ZnO.

Keywords: ZnO secondary ion mass spectroscopy photoluminescence Raman spectroscopy

Received: 21 January 2014
Revised: 23 February 2014
Accepted manuscript online:

PACS:	71.20.Nr	(Semiconductor compounds)
	71.55.Gs	(II-VI semiconductors)
	73.20.Hb	(Impurity and defect levels; energy states of adsorbed species)
	73.30.+y	(Surface double layers, Schottky barriers, and work functions)

Fund: Project supported by Fulbright-USA and UNC-Charlotte.

Corresponding Authors: M. Asghar
E-mail: mhashmi@iub.edu.pk

Cite this article:

M. Asghar, K. Mahmood, M. A. Hasan, I. T. Ferguson, R. Tsu, M. Willder Characterization of deep acceptor level in as-grown ZnO thin film by molecular beam epitaxy 2014 Chin. Phys. B 23 097101

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Characterization of deep acceptor level in as-grown ZnO thin film by molecular beam epitaxy

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