An application of half-terrace model to surface ripening of non-bulk GaAs layers

doi:10.1088/1674-1056/23/4/046806

Abstract In order to predict the actual quantity of non-bulk GaAs layers after long-time homoepitaxy on GaAs (001) by theoretical calculation, a half-terrace diffusion model based on thermodynamics is used to calculate the ripening time of GaAs layers to form a flat morphology in annealing. To verify the accuracy of the calculation, real space scanning tunneling microscopy images of GaAs surface after different annealing times are obtained and the roughness of the GaAs surface is measured. The results suggest that the half terrace model is an accurate method with a relative error of about 4.1%.

Keywords: scanning tunneling microscopy Ⅲ-Ⅴ semiconductors annealing diffusion in nanoscale solids

Received: 31 July 2013
Revised: 05 November 2013
Accepted manuscript online:

PACS:	68.37.Ef	(Scanning tunneling microscopy (including chemistry induced with STM))
	81.05.Ea	(III-V semiconductors)
	81.40.Ef	(Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization)
	66.30.Pa	(Diffusion in nanoscale solids)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 60866001) and the Doctorate Foundation of the Education Ministry of China (Grant No. 20105201110003).

Corresponding Authors: Ding Zhao
E-mail: zding@gzu.edu.cn

About author: 68.37.Ef; 81.05.Ea; 81.40.Ef; 66.30.Pa

Cite this article:

Liu Ke (刘珂), Guo Xiang (郭祥), Zhou Qing (周清), Zhang Bi-Chan (张毕禅), Luo Zi-Jiang (罗子江), Ding Zhao (丁召) An application of half-terrace model to surface ripening of non-bulk GaAs layers 2014 Chin. Phys. B 23 046806

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An application of half-terrace model to surface ripening of non-bulk GaAs layers

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