Two crucial factors influencing quality of GaAs on Ge substrate

doi:10.1088/1674-1056/23/4/046805

Abstract High-quality GaAs films with fine surfaces and GaAs/Ge interfaces on Ge have been achieved via molecular beam epitaxy. The influence of low temperature annealing and low temperature epitaxy on the quality of the film when GaAs is grown on a (100) 6° offcut towards [111] Ge substrate are investigated by analyzing and comparing the GaAs films that are fabricated via three different processes. A low temperature annealing process after high temperature annealing and a low temperature epitaxy process after the initial GaAs growth play a vital role in improving the quality of GaAs film on a Ge substrate.

Keywords: molecular beam epitaxy low temperature annealing low temperature epitaxy

Received: 07 August 2013
Revised: 04 October 2013
Accepted manuscript online:

PACS:	68.35.Fx	(Diffusion; interface formation)
	68.35.Ja	(Surface and interface dynamics and vibrations)
	68.35.Md	(Surface thermodynamics, surface energies)

Fund: Project supported by the Shanghai Municipal Natural Science Foundation, China (Grant No. 13ZR1428200).

Corresponding Authors: Men Chuan-Ling
E-mail: anziloveling@126.com

About author: 68.35.Fx; 68.35.Ja; 68.35.Md

Cite this article:

Deng Chuang (邓闯), Men Chuan-Ling (门传玲), Chen Da (陈达) Two crucial factors influencing quality of GaAs on Ge substrate 2014 Chin. Phys. B 23 046805

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