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Chin. Phys. B, 2022, Vol. 31(9): 098503    DOI: 10.1088/1674-1056/ac6db3

Phosphorus diffusion and activation in fluorine co-implanted germanium after excimer laser annealing

Chen Wang(王尘)1,†, Wei-Hang Fan(范伟航)1, Yi-Hong Xu(许怡红)1, Yu-Chao Zhang(张宇超)1, Hui-Chen Fan(范慧晨)1, Cheng Li(李成)2, and Song-Yan Cheng(陈松岩)2
1 Fujian Provincial Key Laboratory of Optoelectronic Technology and Devices, School of Opto-electronic and Communiction Engineering, Xiamen University of Technology, Xiamen 361024, China;
2 Department of Physics, Semiconductor Photonics Research Center, Xiamen University, Xiamen 361005, China
Abstract  The diffusion and the activation of phosphorus in phosphorus and fluorine co-implanted Ge after being annealed by excimer laser are investigated. The results prove that the fluorine element plays an important role in suppressing phosphorus diffusion and enhancing phosphorus activation. Moreover, the rapid thermal annealing process is utilized to evaluate and verify the role of fluorine element. During the initial annealing of co-implanted Ge, it is easier to form high bonding energy FnVm clusters which can stabilize the excess vacancies, resulting in the reduced vacancy-assisted diffusion of phosphorus. The maximum activation concentration of about 4.4×1020 cm-3 with a reduced diffusion length and dopant loss is achieved in co-implanted Ge that is annealed at a tailored laser fluence of 175 mJ/cm2. The combination of excimer laser annealing and co-implantation technique provides a reference and guideline for high level n-type doping in Ge and is beneficial to its applications in the scaled Ge MOSFET technology and other devices.
Keywords:  phosphorus diffusion      activation concentration      co-implanted fluorine      germanium      excimer laser annealing  
Received:  31 March 2022      Revised:  20 April 2022      Accepted manuscript online:  07 May 2022
PACS:  85.40.Ry (Impurity doping, diffusion and ion implantation technology)  
  81.40.Ef (Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization)  
  52.38.Mf (Laser ablation)  
Fund: Project supported by the National Natural Science Foundation of China (Grant No. 61904155), the Science and technology Project of Fujian Provincial Department of Education, China (Grant No. JAT200484), the Natural Science Foundation of Fujian Province, China (Grant No. 2018J05115), and the Scientific Research Projects of Xiamen University of Technology, China (Grant No. YKJCX2020078).
Corresponding Authors:  Chen Wang     E-mail:

Cite this article: 

Chen Wang(王尘), Wei-Hang Fan(范伟航), Yi-Hong Xu(许怡红), Yu-Chao Zhang(张宇超), Hui-Chen Fan(范慧晨), Cheng Li(李成), and Song-Yan Cheng(陈松岩) Phosphorus diffusion and activation in fluorine co-implanted germanium after excimer laser annealing 2022 Chin. Phys. B 31 098503

[1] Chui C O, Ramanathan S, Triplett B, McIntyre P C and Saraswat K C 2002 IEEE Electron Dev. Lett. 23 473
[2] Park J H, Kuzum D, Jung W S and Saraswat K C 2011 IEEE Electron Dev. Lett. 32 234
[3] Li C, Xue C L, Li Y M, Li C B, Cheng B W and Wang Q M 2015 Chin. Phys. B 24 038502
[4] Baldassarre L, Sakat E, Frigerio J, Samarelli A, Gallacher K, Calandrini E, Isella G, Paul D J, Ortolani M and Biagioni P 2015 Nano Lett. 15 7225
[5] Yun Q X, Li M, An X, Lin M, Liu P Q, Li Z Q, Zhang B X, Xia Y X, Zhang H and Zhang X 2014 Chin. Phys. B 23 118506
[6] Skarlatos D, Ioannou-Sougleridis V, Barozzi M, Pepponi G, Vouroutzis N Z, Velessiotis D, Stoemenos J, Zographos N and Colombeau B P 2018 ECS Trans. 86 51
[7] Chui C O, Gopalakrishnan K, Griffin P B, Plummer J D and Saraswat K C 2003 Appl. Phys. Lett. 83 3275
[8] Carroll M S and Koudelka R 2006 Semicond. Sci. Technol. 22 S164
[9] Yu B, Wang Y, Wang H, Xiang Q, Riccobene C, Talwar S and Lin M R 1999 IEDM Tech. Dig. 509
[10] Wang C, Li C, Huang S H, Lu W, Yan G M, Lin G Y, Wei J B, Huang W, Lai H K and Chen S Y 2013 Appl. Phys. Express 6 106501
[11] Milazzo R, Napolitani E, Impellizzeri G, Fisicaro G, Boninelli S, Cuscuna M, De Salvador D, Mastromatteo M, Italia M and La Magna A 2014 J. Appl. Phys. 115 053501
[12] Jiménez A, Carturan S, Milazzo R, Datas A, de Salvador D, del Cañizo C and Napolitani E 2020 Semicond. Sci. Technol. 35 065002
[13] Pastor D, Gandhi H H, Monmeyran C P, Akey A J, Milazzo R, Cai Y, Napolitani E, Gwilliam R M, Crowe I F and Michel J 2018 J. Appl. Phys. 123 165101
[14] Milazzo R, Impellizzeri G, Cuscuná M, De Salvador D, Mastromatteo M, La Magna A, Fortunato G, Priolo F, Privitera V and Carnera A 2016 Mater. Sci. Semicond. Process. 42 19
[15] Brotzmann S, Bracht H, Hansen J L, Larsen A N, Simoen E, Haller E E, Christensen J S and Werner P 2008 Phys. Rev. B 77 235207
[16] Stathopoulos S, Tsetseris L, Pradhan N, Colombeau B and Tsoukalas D 2015 J. Appl. Phys. 118 135710
[17] Baik S, Kwon H, Paeng C, Zhang H, Kalkofen B, Jang J E, Kim Y and Kwon H J 2019 IEEE Electron Dev. Lett. 40 1507
[18] Chroneos A, Grimes R W and Bracht H 2009 J. Appl. Phys. 106 063707
[19] Impellizzeri G, Boninelli S, Priolo F, Napolitani E, Spinella C, Chroneos A and Bracht H 2011 J. Appl. Phys. 109 113527
[20] El Mubarek H 2013 J. Appl. Phys. 114 223512
[21] Monmeyran C, Crowe I F, Gwilliam R M, Heidelberger C, Napolitani E, Pastor D, Gandhi H H, Mazur E, Michel J and Agarwal A M 2018 J. Appl. Phys. 123 161524
[22] Liu J, Wang G, Li J, Kong Z and Radamson H H 2020 J. Mater. Sci.:Mater. Electron. 31 161
[23] Impellizzeri G, Napolitani E, Boninelli S, Fisicaro G, Cuscuná M, Milazzo R, Magna A L, Fortunato G, Priolo F and Privitera V 2013 J. Appl. Phys. 113 113505
[24] Wang C, Li C, Huang S H, Lu W F, Yan G M, Zhang M T, Wu H D, Lin G Y, Wei J B, Huang W, Lai H K and Chen S Y 2014 Appl. Surf. Sci. 300 208
[25] Wang C, Li C, Lin G Y, Lu W F, Wei J B, Huang W, Lai H K, Chen S Y, Di Z F and Zhang M 2014 IEEE Trans. Electron Dev. 61 3060
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