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Introducing voids around the interlayer of AlN by high temperature annealing |
| Jianwei Ben(贲建伟)1,2, Jiangliu Luo(罗江流)1, Zhichen Lin(林之晨)1, Xiaojuan Sun(孙晓娟)3,†, Xinke Liu(刘新科)1,‡, and Xiaohua Li(黎晓华)1 |
1 College of Materials Science and Engineering, Shenzhen University-Hanshan Normal University Postdoctoral Workstation, Shenzhen University, Shenzhen 518060, China;
2 College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China;
3 State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China |
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Abstract Introducing voids into AlN layer at a certain height using a simple method is meaningful but challenging. In this work, the AlN/sapphire template with AlN interlayer structure was designed and grown by metal-organic chemical vapor deposition. Then, the AlN template was annealed at 1700 ℃ for an hour to introduce the voids. It was found that voids were formed in the AlN layer after high-temperature annealing and they were mainly distributed around the AlN interlayer. Meanwhile, the dislocation density of the AlN template decreased from 5.26×109 cm-2 to 5.10×108 cm-2. This work provides a possible method to introduce voids into AlN layer at a designated height, which will benefit the design of AlN-based devices.
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Received: 15 September 2021
Revised: 17 November 2021
Accepted manuscript online: 26 November 2021
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PACS:
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61.72.uj
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(III-V and II-VI semiconductors)
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68.35.bg
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(Semiconductors)
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68.37.Hk
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(Scanning electron microscopy (SEM) (including EBIC))
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| Fund: Project supported by the National Key Research and Development Program of China (Grant No. 2017YFB0404100), the National Natural Science Foundation of China (Grant Nos. 61827813, 61974144, and 62004127), the Key Research Program of the Chinese Academy of Sciences (Grant No. XDPB22), the Key-Area Research and Development Program of Guangdong Province, China (Grant Nos. 2020B010169001 and 2020B010174003), and the Science and Technology Foundation of Shenzhen (Grant No. JSGG20191129114216474). |
Corresponding Authors:
Xiaojuan Sun, Xinke Liu
E-mail: sunxj@ciomp.ac.cn;xkliu@szu.edu.cn
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Cite this article:
Jianwei Ben(贲建伟), Jiangliu Luo(罗江流), Zhichen Lin(林之晨), Xiaojuan Sun(孙晓娟), Xinke Liu(刘新科), and Xiaohua Li(黎晓华) Introducing voids around the interlayer of AlN by high temperature annealing 2022 Chin. Phys. B 31 076104
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