1 College of Materials Science and Engineering, Shenzhen University-Hanshan Normal University Postdoctoral Workstation, Shenzhen University, Shenzhen 518060, China; 2 College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China; 3 State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
Abstract Introducing voids into AlN layer at a certain height using a simple method is meaningful but challenging. In this work, the AlN/sapphire template with AlN interlayer structure was designed and grown by metal-organic chemical vapor deposition. Then, the AlN template was annealed at 1700 ℃ for an hour to introduce the voids. It was found that voids were formed in the AlN layer after high-temperature annealing and they were mainly distributed around the AlN interlayer. Meanwhile, the dislocation density of the AlN template decreased from 5.26×109 cm-2 to 5.10×108 cm-2. This work provides a possible method to introduce voids into AlN layer at a designated height, which will benefit the design of AlN-based devices.
(Scanning electron microscopy (SEM) (including EBIC))
Fund: Project supported by the National Key Research and Development Program of China (Grant No. 2017YFB0404100), the National Natural Science Foundation of China (Grant Nos. 61827813, 61974144, and 62004127), the Key Research Program of the Chinese Academy of Sciences (Grant No. XDPB22), the Key-Area Research and Development Program of Guangdong Province, China (Grant Nos. 2020B010169001 and 2020B010174003), and the Science and Technology Foundation of Shenzhen (Grant No. JSGG20191129114216474).
Corresponding Authors:
Xiaojuan Sun, Xinke Liu
E-mail: sunxj@ciomp.ac.cn;xkliu@szu.edu.cn
Cite this article:
Jianwei Ben(贲建伟), Jiangliu Luo(罗江流), Zhichen Lin(林之晨), Xiaojuan Sun(孙晓娟), Xinke Liu(刘新科), and Xiaohua Li(黎晓华) Introducing voids around the interlayer of AlN by high temperature annealing 2022 Chin. Phys. B 31 076104
[1] Huang Y, Lin C, Chen S, Dai J, Wang G, Huang K, Chen K and Hsu Y 2011 Opt. Express19 A57 [2] Taib M I M, Munirah N, Waheeda S N, Shuhaimi A, Sabki S N and Zainal N 2019 J. Electron. Mater.48 3547 [3] Sheu J K, Tu S J, Yeh Y, Lee M and Lai W C 2012 Appl. Phys. Lett.101 151103 [4] Ngo T H, Gil B, Shubina T V, Damilano B, Vezian S, Valvin P and Massies J 2018 Sci. Rep.8 15767 [5] Iba Y, Shojiki K, Kuboya S, Uesugi K, Xiao S and Miyake H 2021 J. Crystal Growth570 126237 [6] Zhang L, Xu F, Wang J, He C, Guo W, Wang M, Sheng B, Lu L, Qin Z, Wang X and Shen B 2016 Sci. Rep.6 35934 [7] Kim S M, Lee K H and Jung G Y 2013 Crystengcomm15 6062 [8] Alias M S, Janjua B, Zhao C, Priante D, Alhamoud A, Tangi M, Alanazi L, A. Alatawi A, Albadri A, Alyamani A, Ng T K and Ooi B S 2017 IEEE Photon. J.9 1 [9] Lee D, Lee J W, Jang J, Shin I, Jin L, Park J H, Kim J, Lee J, Noh H, Kim Y, Park Y, Lee G, Park Y, Kim J K and Yoon E 2017 Appl. Phys. Lett.110 191103 [10] Xie N, Xu F, Zhang N, Lang J, Wang J, Wang M, Sun Y, Liu B, Ge W, Qin Z, Kang X, Yang X, Wang X and Shen B 2019 Jpn. J. Appl. Phys.58 100912 [11] Yan J, Xing Z, Wang J, Guo L W, Zhu X L, Peng M Z, Yu N S, Jia H Q, Chen H and Zhou J M 2007 Chin. Phys. Lett.24 2018 [12] Cao R T, Xu S R, Zhang J C, Zhao Y, Xue J S, Ha W, Zhang S, Cui P S, Wen H J and Chen X 2014 Chin. Phys. B23 047804 [13] Thanh D T, Jin J, Ko K B, Ryu B D, Han M, Cuong T V and Hong C 2017 Opt. Mater. Express7 1463 [14] Chen Y, Kuo C, Chang L and Wu J 2014 International Journal of Photoenergy2014 1 [15] Liu C, Wang H, Sodabanlu H, Sugiyama M and Nakano Y 2014 Phys. Status Solidi C11 293 [16] Mitsunari T, Tanikawa T, Honda Y, Yamaguchi M and Amano H 2012 Phys. Status Solidi C9 480 [17] Li D D, Chen J J, Su X J, Huang J, Niu M T, Xu J T and Xu K 2021 Chin. Phys. B30 036801 [18] Ben J, Sun X, Jia Y, Jiang K, Shi Z, Liu H, Wang Y, Kai C, Wu Y and Li D 2018 CrystEngComm20 4623 [19] Xiao S, Suzuki R, Miyake H, Harada S and Ujihara T 2018 Journal of Crystal Growth502 41 [20] Ben J, Shi Z, Zang H, Sun X, Liu X, Lü W and Li D 2020 Appl. Phys. Lett.116 251601 [21] Ramesh C, Tyagi P, Yadav B S, Ojha S, Maurya K K, Kumara M S and Kushvaha S S 2018 Mater. Sci. Eng. B231 105 [22] Wang M X, Xu F J, Xie N, Sun Y H, Liu B Y, Ge W K, Kang X N, Qin Z X, Yang X L, Wang X Q and Shen B 2019 Appl. Phys. Lett.114 112105 [23] Miyake H, Nishio G, Suzuki S, Hiramatsu K, Fukuyama H, Kaur J and Kuwano N 2016 Appl. Phys. Express9 025501 [24] Miyake H, Lin C, Tokoro K and Hiramatsu K 2016 J. Crystal Growth456 155 [25] Moran B, Wu F, Romanov A E, Mishra U K, Denbaars S P and Speck J S 2004 J. Crystal Growth273 38 [26] Imura M, Fujimoto N, Okada N, Balakrishnan K, Iwaya M, Kamiyama S, Amano H, Akasaki I, Noro T, Takagi T and Bandoh A 2007 J. Crystal Growth300 136 [27] Fukuyama H, Miyake H, Nishio G, Suzuki S and Hiramatsu K 2016 Jpn. J. Appl. Phys.55 05FL02
Altmetric calculates a score based on the online attention an article receives. Each coloured thread in the circle represents a different type of online attention. The number in the centre is the Altmetric score. Social media and mainstream news media are the main sources that calculate the score. Reference managers such as Mendeley are also tracked but do not contribute to the score. Older articles often score higher because they have had more time to get noticed. To account for this, Altmetric has included the context data for other articles of a similar age.
