Chin. Phys. B
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Chin. Phys. B  2011, Vol. 20 Issue (2): 027304    DOI: 10.1088/1674-1056/20/2/027304
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Next Issue| Archive| Adv Search |
Characterization of Al2O3/GaN/AlGaN/GaN metal–insulator–semiconductor high electron mobility transistors with different gate recess depths
Yang Li-Yuana, Yang Linga, Quan Sia, Wang Haoa, Zhang Jin-Chenga, Hao Yuea, Pan Cai-Yuanb, Yu Hui-Youb, Ma Xiao-Huac
a Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China; b School of Technical Physics, Xidian University, Xi'an 710071, China; c School of Technical Physics, Xidian University, Xi'an 710071, China; Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China

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