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Chin. Phys. B, 2022, Vol. 31(4): 047701    DOI: 10.1088/1674-1056/ac3223

Effect of anode area on the sensing mechanism of vertical GaN Schottky barrier diode temperature sensor

Ji-Yao Du(都继瑶)1, Xiao-Bo Li(李小波)2, Tao-Fei Pu(蒲涛飞)2,†, and Jin-Ping Ao(敖金平)2
1 School of Automation and Electrical Engineering, Shenyang Ligong University, Shenyang 110159, China;
2 Institute of Technology and Science, Tokushima University, Tokushima, Japan
Abstract  Effect of anode area on temperature sensing ability is investigated for a vertical GaN Schottky-barrier-diode sensor. The current-voltage-temperature characteristics are comparable to each other for Schottky barrier diodes with different anode areas, excepting the series resistance. In the sub-threshold region, the contribution of series resistance on the sensitivity can be ignored due to the relatively small current. The sensitivity is dominated by the current density. A large anode area is helpful for enhancing the sensitivity at the same current level. In the fully turn-on region, the contribution of series resistance dominates the sensitivity. Unfortunately, a large series resistance degrades the temperature error and linearity, implying that a larger anode area will help to decrease the series resistance and to improve the sensing ability.
Keywords:  GaN      temperature sensor      Schottky contact      vertical diode  
Received:  03 June 2021      Revised:  14 October 2021      Accepted manuscript online:  22 October 2021
PACS:  77.84.Bw (Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.)  
  73.40.Kp (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)  
  52.59.Mv (High-voltage diodes)  
  82.80.Pv (Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.))  
Fund: This work was supported by the Scientific Research Support Foundation for Introduced High-Level Talents of Shenyang Ligong University (Grant No. 1010147000914) and the Science and Technology Program of Ningbo (Grant No. 2019B10129).
Corresponding Authors:  Tao-Fei Pu     E-mail:

Cite this article: 

Ji-Yao Du(都继瑶), Xiao-Bo Li(李小波), Tao-Fei Pu(蒲涛飞), and Jin-Ping Ao(敖金平) Effect of anode area on the sensing mechanism of vertical GaN Schottky barrier diode temperature sensor 2022 Chin. Phys. B 31 047701

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