Wet etching and passivation of GaSb-based very long wavelength infrared detectors

doi:10.1088/1674-1056/ac4cc1

Abstract The etching and passivation processes of very long wavelength infrared (VLWIR) detector based on the InAs/GaSb/AlSb type-II superlattice have been studied. By studying the effect of each component in the citric acid solution (citric acid, phosphoric acid, hydrogen peroxide, deionized water), the best solution ratio is obtained. After comparing different passivation materials such as sulfide + SiO₂, Al₂O₃, Si₃N₄ and SU8, it is found that SU8 passivation can reduce the dark current of the device to a greater degree. Combining this wet etching and SU8 passivation, the R₀A of VLWIR detector with a mesa diameter of 500 μm is about 3.6 Ω ·cm² at 77 K.

Keywords: InAs/GaSb/AlSb superlattice very long wavelength infrared (VLWIR) detector wet etching passivation

Received: 29 November 2021
Revised: 05 January 2022
Accepted manuscript online: 19 January 2022

PACS:	85.60.Gz	(Photodetectors (including infrared and CCD detectors))
	73.61.Ey	(III-V semiconductors)
	68.65.Cd	(Superlattices)

Fund: Project supported by the National Basic Research Program of China (Grant Nos. 2018YFA0209102 and 2019YFA070104), the National Natural Science Foundation of China (Grant Nos. 61790581 and 61274013), the Key Research Program of the Chinese Academy of Sciences (Grant No. XDPB22).

Corresponding Authors: Hong-Yue Hao, Hong-Yue Hao
E-mail: haohongyue@semi.ac.cn;zcniu@semi.ac.cn

Cite this article:

Xue-Yue Xu(许雪月), Jun-Kai Jiang(蒋俊锴), Wei-Qiang Chen(陈伟强), Su-Ning Cui(崔素宁), Wen-Guang Zhou(周文广), Nong Li(李农), Fa-Ran Chang(常发冉), Guo-Wei Wang(王国伟), Ying-Qiang Xu(徐应强), Dong-Wei Jiang(蒋洞微), Dong-Hai Wu(吴东海), Hong-Yue Hao(郝宏玥), and Zhi-Chuan Niu(牛智川) Wet etching and passivation of GaSb-based very long wavelength infrared detectors 2022 Chin. Phys. B 31 068503

[1] Walther M, Schmitz J, Rehm R, et al. 2005 J. Cryst. Growth 278 156
[2] Wei Y, Hood A, Yau H, et al. 2005 Appl. Phys. Lett. 86 4785
[3] Sullivan G J, Ikhlassi A, Bergman J, et al. 2005 J. Vac. Sci. Technol. B 23 1144
[4] Aifer E H, Jackson E M, Boishin G, et al. 2003 Appl. Phys. Lett. 82 4411
[5] Smith D L and Mailhiot C 1987 J. Appl. Phys. 62 2545
[6] Chen G, Nguyen B M, Hoang A M, et al. 2011 Appl. Phys. Lett. 99 651
[7] Chen G, Huang E K, Hoang A M, et al. 2012 Appl. Phys. Lett. 101 651
[8] Delaunay P Y, Nguyen B M, Hoffman D, et al. 2009 IEEE Journal of Quantum Electronics 45 157
[9] Huang E K, Nguyen B M, Hoffman D, et al. 2009 Proc. SPIE 7222 72220
[10] Huang E K, Hoffman D, Nguyen B, et al. 2009 Appl. Phys. Lett. 94 163511
[11] Plis E A, Kutty M N and Krishna S 2013 Laser & Photon. Rev. 7 45
[12] Chaghi R, Cervera C, Grech P, et al. 2009 Semiconductor Science and Technology 24 065010
[13] Dier O, Lin C, Grau M, et al. 2004 Semiconductor Science and Technology 19 1250
[14] Kutty M N, Plis E, Khoshakhlagh A, et al. 2010 J. Electron. Mater. 39 2203
[15] Hao H Y, Xiang W, Wang G W, et al. 2015 Chin. Phys. Lett. 32 107302
[16] Plis E A 2014 Advances in Electronics 2014 1
[17] Lebedev M V, Lvova T V, Pavlov S I, et al. 2017 Semiconductors 51 1093
[18] Ying Z, Ji X, Ming S, et al. 2015 Journal of Applied Physics 118 034507
[19] Hood A, Razeghi M, Aifer E H, et al. 2005 Appl. Phys. Lett. 87 3262
[20] Plis E A, Kutty M N and Krishna S 2013 Laser & Photon. Rev. 7 45
[21] Huang M L, Chang Y C, Chang C H, et al. 2005 Appl. Phys. Lett. 87 87
[22] Hood A, Delaunay P Y, Hoffman D, et al. 2007 Appl. Phys. Lett. 90 233513

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Wet etching and passivation of GaSb-based very long wavelength infrared detectors

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