Molecular beam epitaxy growth of iodide thin films

doi:10.1088/1674-1056/abcf93

Abstract Study of two-dimensional (2D) magnetic materials is important for both fundamental research and application. Here we report molecular beam epitaxy growth of iodides, candidates for exhibiting 2D magnetism. Decomposition of CrI₃ is utilized to produce stable gaseous I₂ flux. Growth of MnI₂, GdI₃, and CrI₂ down to monolayer is successful achieved by co-depositing I₂ and corresponding metal atoms. The thin films of the three materials are characterized by scanning tunneling microscope and found to be insulators with bandgaps of 4.4 eV, 0.6 eV, and 3.0 eV, respectively. The film growth paves the way for further study of magnetic properties at the 2D limit.

Keywords: two-dimensional magnetism iodide thin films molecular beam epitaxy scanning tunneling microscope

Received: 14 November 2020
Revised: 27 November 2020
Accepted manuscript online: 02 December 2020

PACS:	81.15.Hi	(Molecular, atomic, ion, and chemical beam epitaxy)
	75.50.Pp	(Magnetic semiconductors)
	07.79.Cz	(Scanning tunneling microscopes)
	73.22.-f	(Electronic structure of nanoscale materials and related systems)

Fund: Project supported by the Science Challenge Project (Grant No. TZ2016004).

Corresponding Authors: ^†Corresponding author. E-mail: na-li07@pku.edu.cn

Cite this article:

Xinqiang Cai(蔡新强), Zhilin Xu(徐智临), Shuai-Hua Ji(季帅华), Na Li(李娜), and Xi Chen(陈曦) Molecular beam epitaxy growth of iodide thin films 2021 Chin. Phys. B 30 028102

1 Novoselov K S, Geim A K, Morozov S V, Jiang D, Katsnelson M I, Grigorieva I V, Dubonos S V and Firsov A A 2005 Nature 438 197
2 Zhang Y B, Tan Y W, Stormer H L and Kim P 2005 Nature 438 201
3 Huang B, Clark G, Navarro-Moratalla E, Klein D R, Cheng R, Seyler, K L, Zhong D, Schmidgall E, McGuire M A, Cobden D H, Yao W, Xiao D, Jarillo-Herrero P and Xu X D.2017 Nature 546 270
4 Gong C, Li L, Li Z L, Ji H W, Stern A, Xia Y, Cao T, Bao W, Wang C Z, Wang Y, Qiu Z Q, Cava R J, Louie S G, Xia J and Zhang X 2017 Nature 546 265
5 Peng L, Zhao J Z, Cai M, Hua G Y, Liu Z Y, Xia H N, Yuan Y, Zhang W H, Xu G, Zhao L X, Zhu Z W, Xiang T and Fu Y S 2020 Phys. Rev. Research 2 023264
6 Lin H C, Huang W T, Zhao K, Qiao S, Liu Z, Wu J, Chen X and Ji S H 2018 Nano. Research 11 4722
7 Cai X Q, Xu Z L, Zhou H, Ren J, Li N, Meng S, Ji S H and Chen X 2020 Phys. Rev. Materials 4 064003
8 Li P G, Wang C, Zhang J H, Chen S W, Guo D H, Ji W and Zhong D Y 2020 Sci. Bull. 65 1064
9 Berry K O, Smardzewski R R and McCarley R E 1969 Inorg. Chem. 8 1994
10 Handy L L and Gregory N W 1950 J. Am. Chem. Soc. 72 5049
11 Sherwood and Peter M A 1976 J. Chem. Soc. Faraday Trans. II 72 1805
12 Salvi A M, Castle J E, Watts J F and Desimoni E 1995 Appl. Surf. Sci. 90 333
13 Cable J W, Wilkinson M K, Wollan E O and Koehler W C 1962 Phys. Rev. 125 1860
14 Sato T, Kadowaki H and Iio K 1995 Physica B: Condensed Matter 213-214 224
15 Hovi V, Vuola R and Salmenper\"a L J 1970 J. Low. Temp. Phys. 2 383
16 Jungwirth T, Marti X, Wadley P and Wunderlich J 2016 Nat. Nanotechnol. 11 231
17 Baltz V, Manchon A, Tsoi M, Moriyama T, Ono T and Tserkovnyak T 2018 Rev. Mod. Phys. 90 015005
18 Jungwirth T, Sinova J, Manchon A, Marti X, Wunderlich J and Felser C 2018 Nat. Phys. 14 200
19 Kurumaji T, Seki S, Ishiwata S, Murakawa H, Tokunaga Y, Kaneko Y and Tokura Y 2011 Phys. Rev. Lett. 106 167206
20 Asprey L B, Keenan T K and Kruse F H 1964 Inorg. Chem. 3 1137
21 Tracy J W, Gregory N W, Stewart J M and Lingafelter E C 1962 Acta Cryst. 15 460
22 Besrest F and Jaulmes S 1973 Acta Cryst. B 29 1560

[1]	Strain compensated type II superlattices grown by molecular beam epitaxy Chao Ning(宁超), Tian Yu(于天), Rui-Xuan Sun(孙瑞轩), Shu-Man Liu(刘舒曼), Xiao-Ling Ye(叶小玲), Ning Zhuo(卓宁), Li-Jun Wang(王利军), Jun-Qi Liu(刘俊岐), Jin-Chuan Zhang(张锦川), Shen-Qiang Zhai(翟慎强), and Feng-Qi Liu(刘峰奇). Chin. Phys. B, 2023, 32(4): 046802.
[2]	Electroluminescence explored internal behavior of carriers in InGaAsP single-junction solar cell Xue-Fei Li(李雪飞), Wen-Xian Yang(杨文献), Jun-Hua Long(龙军华), Ming Tan(谭明), Shan Jin(金山), Dong-Ying Wu(吴栋颖), Yuan-Yuan Wu(吴渊渊), and Shu-Long Lu(陆书龙). Chin. Phys. B, 2023, 32(1): 017801.
[3]	Selective formation of ultrathin PbSe on Ag(111) Jing Wang(王静), Meysam Bagheri Tagani, Li Zhang(张力), Yu Xia(夏雨), Qilong Wu(吴奇龙), Bo Li(黎博), Qiwei Tian(田麒玮), Yuan Tian(田园), Long-Jing Yin(殷隆晶), Lijie Zhang(张利杰), and Zhihui Qin(秦志辉). Chin. Phys. B, 2022, 31(9): 096801.
[4]	Monolayer MoS₂ of high mobility grown on SiO₂ substrate by two-step chemical vapor deposition Jia-Jun Ma(马佳俊), Kang Wu(吴康), Zhen-Yu Wang(王振宇), Rui-Song Ma(马瑞松), Li-Hong Bao(鲍丽宏), Qing Dai(戴庆), Jin-Dong Ren(任金东), and Hong-Jun Gao(高鸿钧). Chin. Phys. B, 2022, 31(8): 088105.
[5]	Two-dimensional Sb cluster superlattice on Si substrate fabricated by a two-step method Runxiao Zhang(张润潇), Zi Liu(刘姿), Xin Hu(胡昕), Kun Xie(谢鹍), Xinyue Li(李新月), Yumin Xia(夏玉敏), and Shengyong Qin(秦胜勇). Chin. Phys. B, 2022, 31(8): 086801.
[6]	Effect of f-c hybridization on the $\gamma\to \alpha$ phase transition of cerium studied by lanthanum doping Yong-Huan Wang(王永欢), Yun Zhang(张云), Yu Liu(刘瑜), Xiao Tan(谈笑), Ce Ma(马策), Yue-Chao Wang(王越超), Qiang Zhang(张强), Deng-Peng Yuan(袁登鹏), Dan Jian(简单), Jian Wu(吴健), Chao Lai(赖超), Xi-Yang Wang(王西洋), Xue-Bing Luo(罗学兵), Qiu-Yun Chen(陈秋云), Wei Feng(冯卫), Qin Liu(刘琴), Qun-Qing Hao(郝群庆), Yi Liu(刘毅), Shi-Yong Tan(谭世勇), Xie-Gang Zhu(朱燮刚), Hai-Feng Song(宋海峰), and Xin-Chun Lai(赖新春). Chin. Phys. B, 2022, 31(8): 087102.
[7]	Experimental observation of pseudogap in a modulation-doped Mott insulator: Sn/Si(111)-(√30×√30)R30° Yan-Ling Xiong(熊艳翎), Jia-Qi Guan(关佳其), Rui-Feng Wang(汪瑞峰), Can-Li Song(宋灿立), Xu-Cun Ma(马旭村), and Qi-Kun Xue(薛其坤). Chin. Phys. B, 2022, 31(6): 067401.
[8]	Interface effect on superlattice quality and optical properties of InAs/GaSb type-II superlattices grown by molecular beam epitaxy Zhaojun Liu(刘昭君), Lian-Qing Zhu(祝连庆), Xian-Tong Zheng(郑显通), Yuan Liu(柳渊), Li-Dan Lu(鹿利单), and Dong-Liang Zhang(张东亮). Chin. Phys. B, 2022, 31(12): 128503.
[9]	Molecular beam epitaxy growth of quantum devices Ke He(何珂). Chin. Phys. B, 2022, 31(12): 126804.
[10]	Plasma assisted molecular beam epitaxial growth of GaN with low growth rates and their properties Zhen-Hua Li(李振华), Peng-Fei Shao(邵鹏飞), Gen-Jun Shi(施根俊), Yao-Zheng Wu(吴耀政), Zheng-Peng Wang(汪正鹏), Si-Qi Li(李思琦), Dong-Qi Zhang(张东祺), Tao Tao(陶涛), Qing-Jun Xu(徐庆君), Zi-Li Xie(谢自力), Jian-Dong Ye(叶建东), Dun-Jun Chen(陈敦军), Bin Liu(刘斌), Ke Wang(王科), You-Dou Zheng(郑有炓), and Rong Zhang(张荣). Chin. Phys. B, 2022, 31(1): 018102.
[11]	Analysis of properties of krypton ion-implanted Zn-polar ZnO thin films Qing-Fen Jiang(姜清芬), Jie Lian(连洁), Min-Ju Ying(英敏菊), Ming-Yang Wei(魏铭洋), Chen-Lin Wang(王宸琳), and Yu Zhang(张裕). Chin. Phys. B, 2021, 30(9): 097801.
[12]	Nanoscale structural investigation of Zn_1-xMg_xO alloy films on polar and nonpolar ZnO substrates with different Mg contents Xin Liang(梁信), Hua Zhou(周华), Hui-Qiong Wang(王惠琼), Lihua Zhang(张丽华), Kim Kisslinger, and Junyong Kang(康俊勇). Chin. Phys. B, 2021, 30(9): 096107.
[13]	GaSb-based type-I quantum well cascade diode lasers emitting at nearly 2-μm wavelength with digitally grown AlGaAsSb gradient layers Yi Zhang(张一), Cheng-Ao Yang(杨成奥), Jin-Ming Shang(尚金铭), Yi-Hang Chen(陈益航), Tian-Fang Wang(王天放), Yu Zhang(张宇), Ying-Qiang Xu(徐应强), Bing Liu(刘冰), and Zhi-Chuan Niu(牛智川). Chin. Phys. B, 2021, 30(9): 094204.
[14]	Gate-controlled magnetic transitions in Fe₃GeTe₂ with lithium ion conducting glass substrate Guangyi Chen(陈光毅), Yu Zhang(张玉), Shaomian Qi(齐少勉), and Jian-Hao Chen(陈剑豪). Chin. Phys. B, 2021, 30(9): 097504.
[15]	Epitaxial growth and transport properties of compressively-strained Ba₂IrO₄ films Yun-Qi Zhao(赵蕴琦), Heng Zhang(张衡), Xiang-Bin Cai(蔡祥滨), Wei Guo(郭维), Dian-Xiang Ji(季殿祥), Ting-Ting Zhang(张婷婷), Zheng-Bin Gu(顾正彬), Jian Zhou(周健), Ye Zhu(朱叶), and Yue-Feng Nie(聂越峰). Chin. Phys. B, 2021, 30(8): 087401.

No Suggested Reading articles found!

Viewed

Full text

Abstract

Cited

Metrics
Related Articles

Molecular beam epitaxy growth of iodide thin films

Cite this article:

Online attention