Gate-controlled magnetic transitions in Fe3GeTe2 with lithium ion conducting glass substrate
Guangyi Chen(陈光毅)1, Yu Zhang(张玉)2, Shaomian Qi(齐少勉)1, and Jian-Hao Chen(陈剑豪)1,2,3,4,†
1 International Center of Quantum Material, School of Physics, Peking University, Beijing 100871, China; 2 Beijing Academy of Quantum Information Sciences, Beijing 100193, China; 3 Key Laboratory for the Physics and Chemistry of Nanodevices, Peking University, Beijing 100871, China; 4 Interdisciplinary Institute of Light-Element Quantum Materials and Research Center for Light-Element Advanced Materials, Peking University, Beijing 100871, China
Abstract Since the discovery of magnetism in two dimensions, effective manipulation of magnetism in van der Waals magnets has always been a crucial goal. Ionic gating is a promising method for such manipulation, yet devices gated with conventional ionic liquid may have some restrictions in applications due to the liquid nature of the gate dielectric. Lithium-ion conducting glass-ceramics (LICGC), a solid Li+ electrolyte, could be used as a substrate while simultaneously acts as a promising substitute for ionic liquid. Here we demonstrate that the ferromagnetism of Fe3GeTe2 (FGT) could be modulated via LICGC. By applying a voltage between FGT and the back side of LICGC substrate, Li+ doping occurs and causes the decrease of the coercive field (Hc) and ferromagnetic transition temperature (Tc) in FGT nanoflakes. A modulation efficiency for Hc of up to ～ 24.6% under Vg = 3.5 V at T =100 K is achieved. Our results provide another method to construct electrically-controlled magnetoelectronics, with potential applications in future information technology.
(Electronic transport in nanoscale materials and structures)
Fund: Project supported by the National Basic Research Program of China (Grant Nos. 2019YFA0308402 and 2018YFA0305604), the National Natural Science Foundation of China (Grant Nos. 11934001, 11774010, and 11921005), and Beijing Municipal Natural Science Foundation, China (Grant No. JQ20002).
Guangyi Chen(陈光毅), Yu Zhang(张玉), Shaomian Qi(齐少勉), and Jian-Hao Chen(陈剑豪) Gate-controlled magnetic transitions in Fe3GeTe2 with lithium ion conducting glass substrate 2021 Chin. Phys. B 30 097504
[1] Geim A K and Novoselov K S 2007 Nat. Mater.6 183 [2] Mak K F, McGill K L, Park J and McEuen P L 2014 Science344 1489 [3] Xia F, Mueller T, Lin Y M, Valdes-Garcia A and Avouris P 2009 Nat. Nanotechnol.4 839 [4] Mermin N D and Wagner H 1966 Phys. Rev. Lett.17 1133 [5] Wang Z, Zhang T, Ding M, et al. 2018 Nat. Nanotechnol.13 554 [6] Gong C, Li L, Li Z, Ji H, Stern A, Xia Y, Cao T, Bao W, Wang C, Wang Y, Qiu Z Q, Cava R J, Louie S G, Xia J and Zhang X 2017 Nature546 265 [7] Huang B, Clark G, Klein D R, MacNeill D, Navarro-Moratalla E, Seyler K L, Wilson N, McGuire M A, Cobden D H, Xiao D, Yao W, Jarillo-Herrero P and Xu X 2018 Nat. Nanotechnol.13 544 [8] Jiang S, Li L, Wang Z, Mak K F and Shan J 2018 Nat. Nanotechnol.13 549 [9] Wang Z, Gutierrez-Lezama I, Ubrig N, Kroner M, Gibertini M, Taniguchi T, Watanabe K, Imamoglu A, Giannini E and Morpurgo A F 2018 Nat. Commun.9 2516 [10] Tan C, Lee J, Jung S G, Park T, Albarakati S, Partridge J, Field M R, McCulloch D G, Wang L and Lee C 2018 Nat. Commun.9 1554 [11] Zhuang H L L, Kent P R C and Hennig R G 2016 Phys. Rev. B93 134407 [12] Deng Y, Yu Y, Song Y, Zhang J, Wang N Z, Sun Z, Yi Y, Wu Y Z, Wu S, Zhu J, Wang J, Chen X H and Zhang Y 2018 Nature563 94 [13] Fei Z, Huang B, Malinowski P, Wang W, Song T, Sanchez J, Yao W, Xiao D, Zhu X, May A F, Wu W, Cobden D H, Chu J H and Xu X 2018 Nat. Mater.17 778 [14] Chen B, Yang J H, Wang H D, Imai M, Ohta H, Michioka C, Yoshimura K and Fang M H 2013 J. Phys. Soc. Jpn.82 124711 [15] Zhao C, Norden T, Zhang P, Zhao P, Cheng Y, Sun F, Parry J P, Taheri P, Wang J, Yang Y, Scrace T, Kang K, Yang S, Miao G X, Sabirianov R, Kioseoglou G, Huang W, Petrou A and Zeng H 2017 Nat. Nanotechnol.12 757 [16] Benedikt S, Xu G F, Alex M A and Igor Ž 2017 Phys. Rev. Lett.119 127403 [17] Zhong D, Seyler K L, Linpeng X, Cheng R, Sivadas N, Huang B, Schmidgall E, Taniguchi T, Watanabe K, McGuire M A, Yao W, Xiao D, Fu K C and Xu X 2017 Sci. Adv.3 e1603113 [18] Bai Y H, Wang X, Mu L P and Xu X H 2016 Chin. Phys. Lett.33 087501 [19] Wei W G, Wang H, Zhang K, Liu H, Kou Y F, Chen J J, Du K, Zhu Y Y, Hou D L, Wu R Q, Yin L F and Shen J 2015 Chin. Phys. Lett.32 087504 [20] Ling Z B, Zhang Q Y, Yang C P, Li X T, Liang W S, Wang Y Q, Yang H W and Sun J R 2020 Chin. Phys. B29 096802 [21] Liu L W, Hu C C, Xu Y C, Huang H B, Cao J W, Liang L and Rao W F 2018 Chin. Phys. B27 077503 [22] Gong Y, Guo J, Li J, et al. 2019 Chin. Phys. Lett.36 076801 [23] Lei B, Wang N Z, Shang C, Meng F B, Ma L K, Luo X G, Wu T, Sun Z, Wang Y, Jiang Z, Mao B H, Liu Z, Yu Y J, Zhang Y B and Chen X H 2017 Phys. Rev. B95 020503 [24] Ying T P, Wang M X, Wu X X, Zhao Z Y, Zhang Z Z, Song B Q, Li Y C, Lei B, Li Q, Yu Y, Cheng E J, An Z H, Zhang Y, Jia X Y, Yang W, Chen X H and Li S Y 2018 Phys. Rev. Lett.121 207003 [25] Song Y, Liang X, Guo J, Deng J, Gao G and Chen X 2019 Phys. Rev. B3 054804 [26] Philippi M, Gutierrez-Lezama I, Ubrig N and Morpurgo A F 2018 Appl. Phys. Lett.113 033502 [27] Alam M H, Xu Z, Chowdhury S, Jiang Z, Taneja D, Banerjee S K, Lai K, Braga M H and Akinwande D 2020 Nat. Commun.11 3203 [28] Arihori K, Ogawa M, Souma S, Sato-Iwanaga J and Suzuki M A 2020 IEEE International Conference on Simulation of Semiconductor Processes and Devices, September 23-October 06, 2020, Hyogo, Japan, p. 367 [29] Wang H S, Liu Q Y, Feng X M, Zhang Z, Wang K, Liu Z J and Dai J F 2020 Mater. Res. Express7 076302 [30] Zhou Z, Wu L M, Chen J C, Ma J J, Huang Y, Shen C M, Bao L H and Gao H J 2020 Chin. Phys. B29 118501 [31] Kühne M, Zhao D, Zschieschang U, Buck R, Müller M, Klauk H and Smet J H 2020 Adv. Mater. Interfaces8 2001453 [32] Alam M H, Chowdhury S, Roy A, Braga M H, Banerjee S K and Akinwande D 2021 Phys. Rev. B5 054003 [33] Zhang X Y, Hen B, Palevski A and Kapitulnik A 2021 npj Quantum Mater.6 30 [34] Pravarthana D, Wang B M, Mustafa Z, Agarwal S, Pei K, Yang H L and Li R W 2019 Phys. Rev. Appl.12 054065 [35] Ohno H, Munekata H, Penney T, von Molnar S and Chang L L 1992 Phys. Rev. Lett.68 2664
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