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Special Issue:
SPECIAL TOPIC — Recent advances in thermoelectric materials and devices
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| SPECIAL TOPIC—Recent advances in thermoelectric materials and devices |
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Band engineering and precipitation enhance thermoelectric performance of SnTe with Zn-doping |
| Zhiyu Chen(陈志禹)1, Ruifeng Wang(王瑞峰)2,3, Guoyu Wang(王国玉)2,3, Xiaoyuan Zhou(周小元)4, Zhengshang Wang(王正上)1, Cong Yin(尹聪)1, Qing Hu(胡庆)1, Binqiang Zhou(周斌强)5, Jun Tang(唐军)1,6, Ran Ang(昂然)1,6 |
1. Key Laboratory of Radiation Physics and Technology, Ministry of Education, Institute of Nuclear Science and Technology, Sichuan University, Chengdu 610064, China;
2. Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing 400714, China;
3. University of Chinese Academy of Sciences, Beijing 100190, China;
4. College of Physics, Chongqing University, Chongqing 401331, China;
5. School of Materials Science and Engineering, Tongji University, Shanghai 201804, China;
6. Institute of New Energy and Low-Carbon Technology, Sichuan University, Chengdu 610065, China |
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Abstract We have systematically studied the thermoelectric properties in Zn-doped SnTe. Strikingly, band convergence and embedded precipitates arising from Zn doping, can trigger a prominent improvement of thermoelectric performance. In particular, the value of dimensionless figure of merit zT has increased by 100% and up to~0.5 at 775 K for the optimal sample with 2% Zn content. Present findings demonstrate that carrier concentration and effective mass play crucial roles on the Seebeck coefficient and power factor. The obvious deviation from the Pisarenko line (Seebeck coefficient versus carrier concentration) due to Zn-doping reveals the convergence of valence bands. When the doping concentration exceeds the solubility, precipitates occur and lead to a reduction of lattice thermal conductivity. In addition, bipolar conduction is suppressed, indicating an enlargement of band gap. The Zn-doped SnTe is shown to be a promising candidate for thermoelectric applications.
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Received: 19 December 2017
Revised: 09 January 2018
Accepted manuscript online:
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PACS:
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72.15.Jf
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(Thermoelectric and thermomagnetic effects)
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73.50.Lw
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(Thermoelectric effects)
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74.25.F-
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(Transport properties)
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74.25.fg
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(Thermoelectric effects)
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| Fund: Project supported by the National Natural Science Foundation of China (Grant No. 51771126), the Youth Foundation of Science & Technology Department of Sichuan Province, China (Grant No. 2016JQ0051), the Sichuan University Talent Introduction Research Funding (Grand No. YJ201537), the Sichuan University Outstanding Young Scholars Research Funding (Grant No. 2015SCU04A20), the World First-Class University Construction Funding, and the Fundamental and Frontier Research in Chongqing (Grant No. CSTC2015JCYJBX0026). |
Corresponding Authors:
Jun Tang, Ran Ang
E-mail: rang@scu.edu.cn;tangjun@scu.edu.cn
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Cite this article:
Zhiyu Chen(陈志禹), Ruifeng Wang(王瑞峰), Guoyu Wang(王国玉), Xiaoyuan Zhou(周小元), Zhengshang Wang(王正上), Cong Yin(尹聪), Qing Hu(胡庆), Binqiang Zhou(周斌强), Jun Tang(唐军), Ran Ang(昂然) Band engineering and precipitation enhance thermoelectric performance of SnTe with Zn-doping 2018 Chin. Phys. B 27 047202
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