Room-temperature terahertz detection based on CVD graphene transistor

doi:10.1088/1674-1056/24/4/047206

Abstract We report the fabrication and characterization of a single-layer graphene field-effect terahertz detector, which is coupled with dipole-like antennas based on the self-mixing detector model. The graphene is grown by chemical vapor deposition and then transferred onto an SiO₂/Si substrate. We demonstrate room-temperature detection at 237 GHz. The detector could offer a voltage responsivity of 0.1 V/W and a noise equivalent power of 207 nW/Hz^1/2. Our modeling indicates that the observed photovoltage in the p-type gated channel can be well fit by the self-mixing theory. A different photoresponse other than self-mixing may apply for the n-type gated channel.

Keywords: graphene field effect transistor self-mixing terahertz detection

Received: 25 March 2014
Revised: 23 October 2014
Accepted manuscript online:

PACS:	72.80.Vp	(Electronic transport in graphene)
	85.30.De	(Semiconductor-device characterization, design, and modeling)
	85.30.Tv	(Field effect devices)
	07.57.Kp	(Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61271157, 61401456, and 11403084), Jiangsu Provincial Planned Projects for Postdoctoral Research Funds (Grant No. 1301054B), the Fund from Suzhou Industry Technology Bureau (Grant No. ZXG2012024), China Postdoctoral Science Foundation (Grant No. 2014M551678), the Graduate Student Innovation Program for Universities of Jiangsu Province (Grant No. CXLX12_0724), the Fundamental Research Funds for the Central Universities (Grant No. JUDCF 12032), and the Fund from National University of Defense Technology (Grant No. JC13-02-14).

Corresponding Authors: Qin Hua
E-mail: hqin2007@sinano.ac.cn

Cite this article:

Yang Xin-Xin (杨昕昕), Sun Jian-Dong (孙建东), Qin Hua (秦华), Lv Li (吕利), Su Li-Na (苏丽娜), Yan Bo (闫博), Li Xin-Xing (李欣幸), Zhang Zhi-Peng (张志鹏), Fang Jing-Yue (方靖岳) Room-temperature terahertz detection based on CVD graphene transistor 2015 Chin. Phys. B 24 047206

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Room-temperature terahertz detection based on CVD graphene transistor

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