DC and analog/RF performance of C-shaped pocket TFET (CSP-TFET) with fully overlapping gate

doi:10.1088/1674-1056/ac43a6

Abstract A C-shaped pocket tunnel field effect transistor (CSP-TFET) has been designed and optimized based on the traditional double-gate TFETs by introducing a C-shaped pocket region between the source and channel to improve the device performance. A gate-to-pocket overlapping structure is also examined in the proposed CSP-TFET to enhance the gate controllability. The effects of the pocket length, pocket doping concentration and gate-to-pocket overlapping structure on the DC and analog/RF characteristics of the CSP-TFET are estimated after calibrating the tunneling model in double-gate TFETs. The DC and analog/RF performance such as on-state current (I_on), on/off current ratio (I_on/I_off), subthreshold swing (SS) transconductance (g_m), cut-off frequency (f_T) and gain-bandwidth product (GBP) are investigated. The optimized CSPTFET device exhibits excellent performance with high I_on (9.98×10^{- 4} A/μm), high I_on/I_off (～ 10¹¹), as well as low SS (～ 12 mV/dec). The results reveal that the CSP-TFET device could be a potential alternative for the next generation of semiconductor devices.

Keywords: tunnel field effect transistor double gate pocket

Received: 01 November 2021
Revised: 27 November 2021
Accepted manuscript online:

PACS:	85.30.Mn	(Junction breakdown and tunneling devices (including resonance tunneling devices))
	85.30.Tv	(Field effect devices)
	81.05.Cy	(Elemental semiconductors)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos.52177185 and 62174055) and Open Fund of Shanghai Key Laboratory of Multidimensional Information Processing,East China Normal University (Grant No.2019MIP002).

Corresponding Authors: Wei-Jing Liu,E-mail:liuwj5500@163.com
E-mail: liuwj5500@163.com

About author: 2021-12-16

Cite this article:

Zi-Xin Chen(陈子馨), Wei-Jing Liu(刘伟景), Jiang-Nan Liu(刘江南), Qiu-Hui Wang(王秋蕙), Xu-Guo Zhang(章徐国), Jie Xu(许洁), Qing-Hua Li(李清华), Wei Bai(白伟), and Xiao-Dong Tang(唐晓东) DC and analog/RF performance of C-shaped pocket TFET (CSP-TFET) with fully overlapping gate 2022 Chin. Phys. B 31 058501

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DC and analog/RF performance of C-shaped pocket TFET (CSP-TFET) with fully overlapping gate

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