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Chin. Phys. B, 2013, Vol. 22(9): 096803    DOI: 10.1088/1674-1056/22/09/096803
Special Issue: TOPICAL REVIEW — Low-dimensional nanostructures and devices
TOPICAL REVIEW—Low-dimensional nanostructures and devices Prev   Next  

Intercalation of metals and silicon at the interface of epitaxial graphene and its substrates

Huang Li (黄立)a b, Xu Wen-Yan (徐文焱)a, Que Yan-De (阙炎德)a, Mao Jin-Hai (毛金海)a, Meng Lei (孟蕾)a, Pan Li-Da (潘理达)a, Li Geng (李更)a, Wang Ye-Liang (王业亮)a, Du Shi-Xuan (杜世萱)a, Liu Yun-Qi (刘云圻)b, Gao Hong-Jun (高鸿钧)a
a Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
b Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China
Abstract  Intercalations of metals and silicon between epitaxial graphene and its substrates are reviewed. For metal intercalation, seven different metals have been successfully intercalated at the interface of graphene/Ru(0001) and form different intercalated structures. Meanwhile, graphene maintains its original high quality after the intercalation and shows features of weakened interaction with the substrate. For silicon intercalation, two systems, graphene on Ru(0001) and on Ir(111), have been investigated. In both cases, graphene preserves its high quality and regains its original superlative properties after the silicon intercalation. More importantly, we demonstrate that thicker silicon layers can be intercalated at the interface, which allows the atomic control of the distance between graphene and the metal substrates. These results show the great potential of the intercalation method as a non-damaging approach to decouple epitaxial graphene from its substrates and even form a dielectric layer for future electronic applications.
Keywords:  graphene      metal intercalation      silicon intercalation      scanning tunneling microscopy  
Received:  30 July 2013      Accepted manuscript online: 
PACS:  68.65.Pq (Graphene films)  
  85.30.-z (Semiconductor devices)  
  68.37.Ef (Scanning tunneling microscopy (including chemistry induced with STM))  
Fund: Project supported by the National Basic Research Program of China (Grant Nos. 2013CBA01600, 2011CB932700, 2009CB929103, and 2010CB923004), the National Natural Science Foundation of China, and the Chinese Acedemy of Sciences.
Corresponding Authors:  Gao Hong-Jun     E-mail:

Cite this article: 

Huang Li (黄立), Xu Wen-Yan (徐文焱), Que Yan-De (阙炎德), Mao Jin-Hai (毛金海), Meng Lei (孟蕾), Pan Li-Da (潘理达), Li Geng (李更), Wang Ye-Liang (王业亮), Du Shi-Xuan (杜世萱), Liu Yun-Qi (刘云圻), Gao Hong-Jun (高鸿钧) Intercalation of metals and silicon at the interface of epitaxial graphene and its substrates 2013 Chin. Phys. B 22 096803

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