| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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An oxide/silicon core/shell nanowire metal-oxide semiconductor field-effect transistor |
| Zhang Li-Ning, He Jin, Zhou Wang, Chen Lin, Xu Yi-Wen |
| Tera-Scale Research Centre, Key Laboratory of Microelectronic Devices and Circuits of Ministry of Education, School of Electronics Engineering and Computer Science, Peking University, Beijing 100871, China |
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Abstract This paper studies an oxide/silicon {c}ore/{s}hell
{n}anowire {M}OSFET (OS-CSNM). Through three-dimensional device
simulations, we have demonstrated that the OS-CSNM has a lower leakage
current and higher $I_{\rm on}/I_{\rm off}$ ratio after introducing
the oxide core into a {t}raditional {n}anowire {M}OSFET (TNM).
The oxide/silicon OS-CSNM structure suppresses threshold voltage
roll-off, drain induced barrier lowering and subthreshold swing
degradation. Smaller intrinsic device delay is also observed in
OS-CSNM in comparison with that of TNM.
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Received: 05 July 2009
Revised: 02 August 2009
Published: 15 April 2010
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PACS:
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85.30.Tv
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(Field effect devices)
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85.30.De
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(Semiconductor-device characterization, design, and modeling)
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85.35.-p
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(Nanoelectronic devices)
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| Fund: Project supported by National
Natural Science Foundation of China (Grant No.~60876027) and
Research Fund for the Doctoral Program of Higher Education of China
(Grant No.~200800010054). |
Cite this article:
Zhang Li-Ning, He Jin, Zhou Wang, Chen Lin, Xu Yi-Wen An oxide/silicon core/shell nanowire metal-oxide semiconductor field-effect transistor 2010 Chin. Phys. B 19 047306
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| [1] |
Auth C P and Plummer J D 1997 IEEE Electron Device Lett. 18 74
|
| [2] |
Singh N, Agarwal A, Bera L K, Liow T Y, Yang R, Rustagi S C, Tung C H, Kumar R, Lo G Q, Balasubramanian N and Kwong D 2006 IEEE Electron Device Lett. 27 383
|
| [3] |
Yang B, Buddharaju K, Teo S, Singh N, Lo G and Kwong D 2008 IEEE Electron Device Lett. 29 791
|
| [4] |
Cui Y, Lauhon L J, Gudiksen M S, Wang J and Lieber C M 2001 Appl. Phys. Lett. 78 2214
|
| [5] |
Fu J, Singh N, Buddharaju K, Teo S, Shen C, Jiang Y, Zhu C, Yu M, Lo G, Balasubramanian N, Kwong D, Gnani E and Baccarani G 2008 IEEE Electron Device Lett. 29 518
|
| [6] |
Rustagi S, Singh N, Fang W, Buddharaju K, Omampuliyur S, Teo S, Tung C, Lo G, Balasubramanian N and Kwong D 2007 IEEE Electron Device Lett. 28 1021
|
| [7] |
Singh N, Fang W, Rustagi S, Budharaju K, Teo S, Mohanraj S, Lo G, Balasubramanian N and Kwong D L 2006 IEEE Electron Device Lett. 27 558
|
| [8] |
Lauhon L J, Gudiksen M S, Wang D and Lieber C M 2002 Nature 420 57
|
| [9] |
Waite A M, Lloyd N S, Auhburn P, Evans A G, Ernst T, Achard H, Deleonibus S, Wang Y and Hemment P 2003 ESSDRC} {223
|
| [10] |
TCAD Sentaurus Device User's Manual} 2007 Synopsys, Mountain View, CA
|
| [11] |
Wettstein A, Schenk A and Fichtner W 2001 IEEE Trans. Electron Devices 48 279
|
| [12] |
Wang J, Polizzi E and Lundstrom M S 2004 J. Appl. Phys. 96 2192
|
| [13] |
Ge L and Fossum J G 2002 IEEE Trans. Electron Devices] 49 287
|
| [14] |
Ray B and Mahapatra S 2008 IEEE Trans. Electron Devices 55 2409
|
| [15] |
Yu B, Wang L, Yuan Y, Asbeck P M and Taur Y 2008 IEEE Trans. Electron Devices 55 2846
|
| [16] |
Choi Y, Asano K, Lindert N, Subramanian V, King T, Bokor J and Hu C 2000 IEEE Electron Device Lett. 21 254
|
| [17] |
Stern F 1982 Phys. Rev. B 5 4891
|
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