Table of contents

11 February 2026, Volume 35 Issue 3 Previous issue   

GENERAL

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LT-PINNs: Physics-informed neural networks based on Laplace transform for solving Caputo-type fractional partial differential equations Ruibo Zhang(张瑞波), Fengjun Li(李风军), and Jianqiang Liu(刘建强) Chin. Phys. B, 2026, 35 (3):  030201.  DOI: 10.1088/1674-1056/adf827 Abstract ( 23 )   PDF (1430KB) ( 7 )   The solution of fractional partial differential equations (PDEs) is an important topic in scientific computing. However, the traditional physics-informed neural networks (PINNs) have problems of memory overflow and low computational efficiency when the derivative is discretized for a long time. Therefore in this paper we innovatively propose a framework of Laplace transform physics-informed neural networks (LT-PINNs), which is dedicated to solving the forward and inverse problems of Caputo-type fractional PDEs. The core of this method is to use the Laplace transform to construct the loss function, which skillfully avoids the dilemma that the fractional derivative operator in traditional PINNs is difficult to operate effectively. By studying the benchmark problem of parameter a in a series of different scenarios we verify that LT-PINNs can predict the solution of Caputo-type fractional PDEs more accurately than fractional PINNs. The excellent performance of LT-PINNs in identifying inverse problems involving fractional order, convection and diffusion coefficients is further explored. At the same time, the effects of network structure, the number of sampling points and noise on the LT-PINNs method are analyzed in detail. The results show that the method can predict the solution of the equation satisfactorily even under severe noise interference. The proposed LT-PINNs framework opens up a new path for efficiently solving fractional PDEs. It shows significant advantages in improving computational efficiency, reducing memory usage and dealing with complex noise environments. It is expected to promote the further development of fractional PDEs in many fields.

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Estimating quantum coherence using limited quantum resources Bin Zou(邹斌), Kai Wu(吴凯), and Zhihua Chen(陈芝花) Chin. Phys. B, 2026, 35 (3):  030301.  DOI: 10.1088/1674-1056/adfb56 Abstract ( 8 )   PDF (295KB) ( 2 )   Quantum coherence, as one of the most fundamental non-classical features in quantum mechanics, plays a pivotal role in various quantum information processing tasks, including quantum computing and quantum metrology. The robustness of quantum coherence (RoC) offers an operational interpretation by quantifying the advantage provided by a quantum state in phase discrimination tasks. To achieve verification RoC with high precision via semidefinite programming (SDP), complete knowledge of quantum states is typically required. Relying solely on expectation values of observables may introduce significant errors in SDP-based estimations. To estimate RoC with high precision using limited data extracted from quantum states, firstly, we propose a semi-supervised K-nearest neighbor (KNN) algorithm (semi-KNN) and a semisupervised method that combines the KNN and random forest (RF) models with a dynamical threshold (semi-KNN-RF). Then we implement the semi-KNN and semi-KNN-RF models to efficiently estimate quantum coherence by analyzing statistical data obtained from randomly generated local projective measurements performed on unknown quantum states. The semi-KNN-RF model performs better than the semi-KNN model. This innovative methodology allows for accurate coherence estimation, even for high-dimensional quantum systems.

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Statistical complexity and stochastic resonance in bistable coupled network systems excited by non-Gaussian noise Meijuan He(何美娟), Lingyun Li(李凌云), Wantao Jia(贾万涛), and Jiangang Zhang(张建刚) Chin. Phys. B, 2026, 35 (3):  030501.  DOI: 10.1088/1674-1056/adfef7 Abstract ( 16 )   PDF (691KB) ( 6 )   This study investigates stochastic resonance (SR) phenomena in bistable coupled networks driven by non-Gaussian noise. Employing signal-to-noise ratio (SNR) and statistical complexity as quantitative metrics, we characterize the SR behavior. First, the dimensionality of a coupled network system is reduced via the mean field theory. Subsequently, we derive closed-form analytical expressions of SNR by the path integral method, the slaving principle and the two-state model theory. Numerical simulations are used to validate the consistency between SR features identified through statistical complexity and those obtained via SNR calculations, thereby corroborating the reliability of our analytical framework. Both theoretical and numerical results conclusively demonstrate the occurrence of SR in the network system. Parametric analyses further elucidate the modulation of SR characteristics by three critical factors: non-Gaussian noise intensity parameters, noise correlation timescale and inter-node coupling strength. Finally, we explore the system’s size resonance properties.

ATOMIC AND MOLECULAR PHYSICS

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Angular momentum distribution of atomic hydrogen in excited states under ultra-short laser field Zhaoyan Zhou(周兆妍)†, Dongwen Zhang(张栋文), and Zengxiu Zhao(赵增秀) Chin. Phys. B, 2026, 35 (3):  033201.  DOI: 10.1088/1674-1056/adfdc6 Abstract ( 15 )   PDF (869KB) ( 4 )   We investigate the population distribution of excited angular momentum ($l$) states in the interaction between a hydrogen atom and an ultra-short laser pulse. Through numerical solution of the time-dependent Schrödinger equation, we theoretically investigate the laser-induced oscillations among excited $l$-states. Temporal evolution analysis reveals distinctive signatures of both multiphoton excitation and frustrated tunneling ionization processes. Specifically, multiphoton excitation dominates during the final optical cycle as the laser peak intensity attenuates, thereby critically determining the final $l$-states population distribution. We demonstrate that the angular quantum states' parity effect does not persist, even for ultra-short pulses with broad frequency bandwidths. The parity effect is also unaffected by laser field asymmetry.

RAPID COMMUNICATION

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Charge-imbalance-induced second harmonic generation in twisted graphene Ronghui Luo(罗荣辉), Shiyang Liu(刘诗洋), Xiao Dong(董校), Jianguo Tian(田建国), and Zhibo Liu(刘智波) Chin. Phys. B, 2026, 35 (3):  034201.  DOI: 10.1088/1674-1056/ae3557 Abstract ( 15 )   PDF (3008KB) ( 4 )   Twist-and-stack engineering provides a programmable degree of freedom for nonlinear optics in two-dimensional materials, yet in a homostructure whose constituents have no second harmonic generation (SHG), how interlayer coupling grants and tunes second-order response remains unclear. Here, we use twisted monolayer-bilayer graphene ($t(1+2)$LG) and combine microscopic SHG spectroscopy with first-principles differential charge-density analysis to establish a unified ``permission-and-resonance'' mechanism. Interlayer coupling creates an interlayer charge imbalance within the AB-stacked bilayer, breaking inversion symmetry and thereby permitting an in-plane electric-dipole response. At the same time, the twist angle steers van Hove singularities in the band structure to achieve two-photon resonance, which markedly amplifies the susceptibility $\chi^{(2)}$. Experimentally, at $\theta =13.5^\circ $, we obtain $\chi^{(2)}=279.4$ pm/V, evidencing a highly efficient second-order response. These results identify SHG as a sensitive probe of interlayer coupling and charge redistribution in homostructure van der Waals systems.

ELECTROMAGNETISM, OPTICS, ACOUSTICS, HEAT TRANSFER, CLASSICAL MECHANICS, AND FLUID DYNAMICS

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Photoacoustic tweezers generated by multiple superposed laser pulses in air Guo-Dong Tong(佟国栋), Li-Yan Xu(许立言), Wen-Qi Wang(王雯琦), Jin-Ping He(何晋平), and Jun Xia(夏军) Chin. Phys. B, 2026, 35 (3):  034301.  DOI: 10.1088/1674-1056/adf9fd Abstract ( 14 )   PDF (1368KB) ( 17 )   We propose a novel method for generating photoacoustic tweezers via multi-ultrasonic resonance in air. In this study, a focused ultrashort laser pulse with a 50 ns pulse width is used to generate ultrasonic resonance by transferring thermal energy to atmospheric H$_2$O in air. Traveling photoacoustic tweezers are generated by modulating the superposition of multiple ultrasonic waves. Through numerical simulations, we obtained the acoustic pressure and temperature fields of the photoacoustic waves. Experimentally, 10 μm microspherical polystyrene particles were placed messily in a 200 μm wide square microfluidic tube. The resulting shapes of the microparticles after manipulation by the photoacoustic tweezers proved that our experimental results align well with theoretical predictions. We demonstrate that the interaction of laser pulses with water vapor can generate both acoustic waves and photoacoustic tweezers.

PHYSICS OF GASES, PLASMAS, AND ELECTRIC DISCHARGES

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Effect of water vapor on the structure and stability of self-organized patterns in atmospheric-pressure pulsed radio-frequency dielectric barrier discharges Man-Qiang Du(杜满强), Wen-Fu Wei(魏文赋), Zhen-Feng Ding(丁振峰), Liang-Wen Qi(漆亮文), Xiao-Dong Wen(温晓东), and Bin Sun(孙斌) Chin. Phys. B, 2026, 35 (3):  035201.  DOI: 10.1088/1674-1056/adf181 Abstract ( 19 )   PDF (603KB) ( 13 )   The effect of water vapor on the self-organized pattern characteristics of atmospheric-pressure radio-frequency argon dielectric barrier discharges was experimentally investigated. Under high relative humidity (RH) conditions, no side discharges were generated between the two surface discharges of the patterns. As the RH gradually decreases, side discharges begin to emerge and evolve through three distinct modes: uniform glow discharge, non-uniform glow discharge, and filamentary discharge. These structural variations are primarily attributed to changes in breakdown (or maintenance) voltage induced by varying RH. At lower RH levels, the strongest single pattern exhibited spontaneous motion, which in turn triggered the collective motion of patterns. The self-organized pattern motion is explained as the shift of re-ignition position induced by electric interaction between asymmetrical side discharge filaments and the central filament.

SPECIAL TOPIC — Structures and properties of materials under high pressure

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Physical properties of Cr2S3 at high pressure Lun Xiong(熊伦), Mingquan Jiang(江明全), Jinxia Zhu(竹锦霞), Lin Xia(夏林), Hao Wang(王毫), Shenghan Zhang(张升瀚), Pengfei Tang(汤鹏飞), Zhiqiang Chen(陈志强), Sheng Jiang(蒋升), and Hongliang Dong(董洪亮) Chin. Phys. B, 2026, 35 (3):  036103.  DOI: 10.1088/1674-1056/ae1cb3 Abstract ( 12 )   PDF (895KB) ( 7 )   The compressive behavior of Cr$_{2}$S$_{3}$ in a quasi-hydrostatic environment was investigated by synchrotron x-ray diffraction using silicone oil as the pressure-transmitting medium in a diamond anvil cell. The maximum pressure was 34 GPa. We found that Cr$_{2}$S$_{3}$ undergoes a structural phase transition at a pressure of 8.5 GPa and the bulk modulus before the phase transition was fitted to be 88 GPa, which corresponds to a bulk modulus of 67 GPa calculated by first-principles theory. In addition, we also investigated the electrical resistance of Cr$_{2}$S$_{3}$ at different pressures and temperatures and found that the resistance decreases rapidly with increasing pressure or temperature and then remains almost unchanged with an increase in pressure or temperature. This indicates that Cr$_{2}$S$_{3}$ undergoes a structural phase transition around 8 GPa. In order to accurately confirm the phase transition pressure, high-pressure Raman experiments were used. We found that the position of Raman peak 3 increases approximately linearly at low pressure and remains constant above 8 GPa, indicating that a structural phase transition occurs at 8 GPa. Finally, the deviatoric stress of Cr$_{2}$S$_{3}$ at high pressures was investigated by the linewidth analysis method. The results show that the deviatoric stress increases approximately linearly at low pressures in the range of 2.8-6.2 GPa.

RAPID COMMUNICATION

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Electronic structure study of the intermetallic compound GdRhIn5 Yulu He(贺宇璐), Bo Wang(王博), Xiangfei Yang(杨向飞), Dengpeng Yuan(袁登鹏), Wei Feng(冯卫), Yaobo Huang(黄耀波), and Qiuyun Chen(陈秋云) Chin. Phys. B, 2026, 35 (3):  037101.  DOI: 10.1088/1674-1056/ae3123 Abstract ( 14 )   PDF (2205KB) ( 1 )   Heavy-fermion compounds frequently host emergent phases - most notably non-BCS superconductivity and unconventional quantum criticality - whose microscopic origins can invariably be traced to the entanglement of itinerant and nearly localized electronic degrees of freedom. In this work, we carry out a systematic study on the electronic structure and quasiparticle features of the antiferromagnetic intermetallic compound GdRhIn$_5$, utilizing high-resolution angle-resolved photoemission spectroscopy (ARPES) measurements. Energy-dependent measurements reveal the coexistence of Fermi surface topologies with both quasi-two-dimensional and three-dimensional characteristics. Notably, the quasiparticle bands commonly observed in conventional cerium-based compounds are absent from the resonance data, likely due to the strong localization nature of the Gd 4f states within the compound. Temperature-dependent studies, combined with density functional theory (DFT) calculations, demonstrate that as temperature decreases, the electronic density of states (EDC) near the Fermi level increases, while the peak position of the MDC associated with the $\beta $ energy band shows a shrinking trend. This systematic exploration of GdRhIn$_5$'s electronic structure enhances our comprehension of the microscopic physical properties not only of GdRhIn$_5$ but also of the broader family of rare-earth-based 115 systems.

SPECIAL TOPIC — Heat conduction and its related interdisciplinary areas

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Improve thermoelectric properties of graphene nanoribbons based on resonant structure engineering Yu-Xuan Kang(康宇轩), Shi-Yun Xiong(熊世云), and Hong-Liang Yi(易红亮) Chin. Phys. B, 2026, 35 (3):  037301.  DOI: 10.1088/1674-1056/ae1950 Abstract ( 14 )   PDF (565KB) ( 2 )   Resonant graphene nanoribbons (GNRs), consisting of GNRs with engineered resonant side structures, offer a promising route to suppress low-frequency phonon transport and significantly reduce lattice thermal conductivity, thereby enhancing thermoelectric performance. In this work, we investigate the thermoelectric properties of resonant GNRs using molecular dynamics simulations combined with the linear-scaling quantum transport (LSQT) method, explicitly accounting for electron–phonon coupling. Our results indicate that while resonance structures moderately degrade the electrical conductivity and Seebeck coefficient, they dramatically reduce the lattice thermal conductivity, which far outweighs the electronic transport losses and leads to an overall improvement in thermoelectric performance. By optimizing the key geometric parameters of the resonant structures — height (HRe) and period (Lp) — we achieve a peak ZT of 0.135 at HRe = 1.5 nm and L p = 7 nm, representing a threefold enhancement over pristine GNRs. This improvement stems from the decoupling of phonon and electron transport, enabled by resonant phonon localization. Our findings not only elucidate the role of resonant structures in tuning thermoelectric properties but also provide a general strategy for designing high-performance low-dimensional thermoelectric materials through targeted phonon engineering.

RAPID COMMUNICATION

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Non-Abelian fractional quantum Hall states at filling factor 3/4 Kai-Wen Huang(黄楷文) and Ying-Hai Wu(吴英海)† Chin. Phys. B, 2026, 35 (3):  037302.  DOI: 10.1088/1674-1056/ae3304 Abstract ( 15 )   PDF (2029KB) ( 4 )   Fractional quantum Hall states have been observed at filling factor $\nu=3/4$ in GaAs hole system and bilayer graphene. In theoretical bootstrap analysis, it was revealed that non-Abelian topological orders with Ising anyons can be realized at $\nu=3/4$, which exhibit $12$ fold ground state degeneracy on the torus. The properties of $\nu=3/4$ states can be analyzed using two complementary approaches. In the first one, they are treated as particle-hole conjugate of $\nu=1/4$ Moore-Read types states. In the second one, they are mapped to composite fermions with reverse flux attachment at effective filling factor $3/2$, whose integral part realizes an integer quantum Hall state and the fractional part realizes $\nu=1/2$ Moore-Read type states. For bilayer graphene with appropriate Landau level mixing, numerical calculations have found $12$ quasi-degenerate ground states on the torus at $\nu=3/4$. Chiral graviton spectral functions of these states have one low energy peak with negative chirality and one high energy peak with positive chirality. This points to a specific member of the Moore-Read type states and agrees with the deduction based on daughter states.

CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES

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Dissipative-coupling-induced magnomechanical chaos Qin Wu(吴琴), Jiao Peng(彭椒), Yu-Dong Chen(陈毓东), and Zeng-Xing Liu(刘增星) Chin. Phys. B, 2026, 35 (3):  037501.  DOI: 10.1088/1674-1056/adfa7a Abstract ( 9 )   PDF (1017KB) ( 3 )   Chaotic motion that exhibits extraordinary dynamic behavior has attracted particular attention in magnonics in the context of understanding nonlinear magnomechanical interaction. Here, we theoretically explore the magnomechanical chaos induced by dissipative coupling in an open cavity magnomechanical system. Numerical calculations of the magnomechanical dynamics show that the introduction of dissipative coupling can greatly enhance the nonlinearity of the system and induces ultra-low driving threshold chaotic motion, which effectively solves the bottleneck that the weak magnetostrictive interaction cannot trigger chaotic motion in a cavity magnomechanical system. Furthermore, we find that the degree of chaos represented by the Lyapunov exponent can be well tuned by changing the dissipative coupling strength. In addition to providing insight into chaotic behavior in open magnomechanical systems, dissipative-coupling-induced chaotic motion may also hold for other magnonic quantum systems since magnons possess excellent compatibility with other quasiparticles, and may find applications in the chaotic transfer of information.

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Coexistence of room-temperature negative differential resistance and unsaturated magnetoresistance effects in germanium-based devices Xiong He(何雄), Ling Cai(蔡玲), Li-Zhi Yi(易立志), Guang-Duo Lu(鲁广铎), Li-Qing Pan(潘礼庆), and Zhi-Gang Sun(孙志刚) Chin. Phys. B, 2026, 35 (3):  037502.  DOI: 10.1088/1674-1056/adfdc3 Abstract ( 17 )   PDF (1183KB) ( 4 )   We demonstrate room-temperature negative differential resistance (NDR) and unsaturated magnetoresistance (MR) effects in germanium-based devices. Our findings indicate that the observed NDR primarily originates from the carrier injection effect induced by local impact ionization in germanium. As the magnetic field increases, the MR values exhibit an unsaturated behavior, increasing quadratically at low fields and transitioning to a linear increase at higher fields, reaching approximately 91% at 1 T. We attribute this large unsaturated MR to carrier inhomogeneity. The equivalent Hall electric field strength was used to characterize the degree of carrier inhomogeneity under magnetic fields: a larger equivalent Hall electric field strength indicates stronger carrier inhomogeneity and consequently a larger corresponding MR. The coexistence of excellent room-temperature NDR and large unsaturated MR in germanium-based devices (achieved by constructing electrodes at two edge positions on the semiconductor surface) enables the development of multifunctional devices.

RAPID COMMUNICATION

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Electrodynamics of a prototypical altermagnetic compound MnTe Bixia Gao(高碧霞), Yixuan Luo(罗伊轩), Liye Cao(曹立叶), Tao Sun(孙涛), Zehao Yu(于泽浩), Lei Wang(王蕾), Xinyu Zhang(张新雨), Hongbo Hu(胡宏波), Yanfeng Guo(郭艳峰), and Rongyan Chen(陈荣艳) Chin. Phys. B, 2026, 35 (3):  037801.  DOI: 10.1088/1674-1056/ae2abc Abstract ( 9 )   PDF (2894KB) ( 8 )   Altermagnetism, characterized by compensated antiparallel spins and momentum-dependent spin splitting, has offered a promising platform for novel spintronic phenomena. Among this class of materials, hexagonal MnTe stands out due to its high Néel temperature and giant spin splitting. However, a comprehensive understanding of its charge dynamics remains incomplete. Here, we employ infrared spectroscopy to investigate the charge dynamics of single crystalline MnTe. The low energy optical conductivity reveals a suppressed Drude response across all temperatures, consistent with the reported p-type doping as indicated by previous angle-resolved photoemission spectroscopy (ARPES) measurement. An indirect band gap of about 0.48 eV attributed to impurity-assisted transitions, and a direct gap of 1.60 eV are identified via the Tauc relation at 10 K. Moreover, we observe a subtle difference at around 1.44 eV in the optical conductivity between the antiferromagnetic and paramagnetic states, which might be linked to altermagnetism-related band splitting. Additionally, Fano line shape analysis of a phonon mode at around 135 cm$^{-1}$ reveals appreciable coupling between the phonon and spin fluctuations near the Néel temperature. Our results provide key insights into the charge dynamics of MnTe, underscoring its rich physics beyond a conventional semiconductor.

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Phonon bottleneck effect due to finite shrinking gap revealed by high-pressure ultrafast dynamics Yanling Wu(吴艳玲), Q. Wu(吴穹), X. Yin(尹霞), Y. X. Huang(黄逸轩), Takeshi Nakagawa, Z. Y. Tian(田珍耘), Fei Sun(孙飞), Q. M. Zhang(张清明), Jun Chang(昌峻), Ho-kwang Mao(毛河光), Yang Ding(丁阳), and Jimin Zhao(赵继民) Chin. Phys. B, 2026, 35 (3):  037802.  DOI: 10.1088/1674-1056/ae3122 Abstract ( 15 )   PDF (949KB) ( 10 )   High-pressure ultrafast dynamics has been recently developed, enabling the exploration of non-equilibrium properties of various quantum materials under high pressure. Particularly, by investigating the pressure dependence of time-resolved ultrafast dynamics, we have discovered a pressure-induced phonon bottleneck effect (PBE). To date, all reported PBEs are due to fully closed gaps, which was reflected in the simultaneous characteristic changes in both amplitude and lifetime of the phonon-phonon scattering slow relaxation component. However, as reflected through its connection to Euler disk, incompletely closed gaps can also induce PBEs. In this work, we report the first PBE due to a finite shrinking gap. As is known, it is challenging to directly observe high-pressure-induced variations in electronic band gaps due to the diamond anvil cell. Here, by investigating Sr$_{{2}}$IrO$_{{4}}$ in our previous work, we obtain an empirical formula for the pressure-induced energy gap variation at room temperature. Our quantitative analysis shows that the gap is finite shrinking rather than fully closed.

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Defect-free InAs nanowires self-catalyzed growth on graphene/Ge by molecular beam epitaxy Yanhui Zhang(张燕辉), Haitao Jiang(姜海涛), Liuyan Fan(范柳燕), Zifan Huo(霍子帆), Ziteng Zhang(张孜腾), Can Zhou(周灿), Yajie Wang(王亚杰), Changlin Zheng(郑长林), Haibo Shu(舒海波), Xiaohao Zhou(周孝好), Pingping Chen(陈平平), Jin Zou(邹进), and Wei Lu(陆卫) Chin. Phys. B, 2026, 35 (3):  038101.  DOI: 10.1088/1674-1056/ae2bf3 Abstract ( 14 )   PDF (1590KB) ( 1 )   InAs nanowires (NWs) self-catalyzed grown on graphene surface frequently exhibit a large number of stacking-fault defects. However, the control of these defects in InAs NWs still remains a large challenge, which significantly limits the applications of InAs NWs in electronics and optoelectronics. In this work, the self-catalyzed growth of InAs NWs on graphene/Ge substrate by molecular beam epitaxy (MBE) is systematically investigated. Growth models for InAs NWs and parasitic islands on graphene/Ge are developed. Through rational design of growth parameters, the self-catalyzed growth of defect-free InAs NWs on graphene surfaces is ultimately achieved. Our experimental results indicate that lower growth temperature can effectively suppress the formation of stacking-fault defects in InAs NWs, no visible stacking-fault defects are observed in the samples grown below 510 ${^\circ}$C, and the intrinsic mechanism for this is clarified with the density functional theory (DFT) calculations.

INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY

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Low-energy termination of spiral turbulence in heterogeneous myocardium using circularly polarized electric fields Yu-Jie Lv(吕玉杰), Xia Feng(冯霞), Wan-Jie Mei(梅万杰), Kai-Wen Sun(孙凯文), Chun Zhang(张春), and Xiang Gao(高翔) Chin. Phys. B, 2026, 35 (3):  038201.  DOI: 10.1088/1674-1056/ae24ee Abstract ( 7 )   PDF (1824KB) ( 2 )   Circularly polarized electric fields (CPEF) represent a highly promising low-energy defibrillation approach, demonstrating exceptional efficacy in terminating life-threatening arrhythmias such as ventricular fibrillation while effectively mitigating the myocardial injury risks associated with conventional high-voltage defibrillation. This study provides an in-depth revelation of the mechanism by which CPEF induces excitation waves around naturally occurring heterogeneous defects within heart tissue, thereby suppressing spiral turbulence. Through numerical simulations based on the LR1 model and phase field method, we confirm that CPEF, due to its dynamic rotational properties, induces virtual electrode effects around various defects. In conditions of low strength, CPEF adaptively excites these defects, thereby achieving synchronized myocardial activation for defibrillation. In comparison with uniform electric fields (UEF), CPEF is more effective in suppressing spiral turbulence by inducing periodic excitation waves around defects with irregular geometries. These findings elucidate the biophysical principles underlying CPEF’s low-energy defibrillation capability, offering robust theoretical support for developing non-invasive antiarrhythmic therapies.

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Enhanced thermal stability of OLEDs based on an organic n-p heterojunction and its derivative Wei Shi(施薇), Wei Zhao(赵微), Bingjia Zhao(赵冰佳), Yangyang Zhu(朱杨洋), Yang Lin(林洋), Yachen Xu(徐亚晨), Weixia Lan(兰伟霞), and Bin Wei(魏斌) Chin. Phys. B, 2026, 35 (3):  038502.  DOI: 10.1088/1674-1056/adfdc8 Abstract ( 9 )   PDF (814KB) ( 5 )   To address the issues of insufficient thermal stability in charge generation layers (CGLs) and carrier imbalance induced by high-temperature annealing in organic light-emitting diodes (OLEDs), this study proposes a metal oxide-doped organic n-p heterojunction (BPhen:Ag$_{2}$O/NPB:MoO$_{3}$) as the core functional layer and designs novel device structures based on its derivatives. By analyzing the performance evolution of heterojunction thin films and OLEDs under annealing treatments ranging from 27 $^\circ$C to 100 $^\circ$C, it was found that after high-temperature annealing, the surface MoO$_{3}$ particles became uniformly dispersed in the heterojunction films, with reduced roughness and no crystallization observed, demonstrating excellent thermal stability. Single-carrier device tests revealed that the current density reached its maximum value at 80 $^\circ$C annealing. In comparison, at 100 $^\circ$C annealing, the current density decreased due to the dissociation of charge-transfer complexes (CTCs), yet it remained higher than that under ambient conditions. Furthermore, the performance degradation of the newly developed p-i-n-p structure OLEDs after high-temperature annealing was significantly smaller compared to conventional p-i-n structures.