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Contribution of x-ray incident position dependence to energy resolution of Ti/Au transition-edge sensors |
| Qing-Xiao Ma(马卿效)1,2, Wen Zhang(张文)1,†, Pei-Zhan Li(李佩展)1, Zhi-Fa Feng(冯志发)1,2, Xian-Feng Zhou(周先锋)1,2, Zheng Wang(王争)1, Jia-Qiang Zhong(钟家强)1, Wei Miao(缪巍)1, Yuan Ren(任远)1, Jing Li(李婧)1, and Sheng-Cai Shi(史生才)1,‡ |
1 Purple Mountain Observatory, Chinese Academic of Sciences, Nanjing 210023, China;
2 University of Science and Technology of China, Hefei 230026, China |
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Abstract We present the contribution of x-ray incident-position dependence on the absorber to the energy resolution of Ti/Au transition-edge sensors (TESs). The pulse height varies with the position due to insufficient thermal conductivity and geometry of the absorber that degrades the measured energy resolution. We develop a three-dimensional (3D) electro-thermal simulation model and thoroughly study the position dependent contribution to energy resolution ($\Delta E_{\rm p}$) for two presentative absorber structures: an absorber directly deposited on the center of TES sensor (design A) and an absorber cantilevered on the TES sensor by several stems (design B). For design A with a 30 μm$\times$40 μm Au absorber $\Delta E_{\rm p}$ is found to be 9.4 eV, while it is reduced to 1.35 eV for design B with a 100 μm$\times$100 μm Au absorber. Although the contribution of position dependence is relatively small, this study facilitates further optimization of the absorber structure to achieve enhanced energy resolution.
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Received: 07 June 2025
Revised: 18 July 2025
Accepted manuscript online: 15 August 2025
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PACS:
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85.25.Oj
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(Superconducting optical, X-ray, and γ-ray detectors (SIS, NIS, transition edge))
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85.25.Am
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(Superconducting device characterization, design, and modeling)
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72.15.Jf
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(Thermoelectric and thermomagnetic effects)
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| Fund: Project supported in part by the National Key Research and Development Program of China (Grant No. 2023YFC2206600) and the National Natural Science Foundation of China (Grant Nos. 12293032 and 12020101002). |
Corresponding Authors:
Wen Zhang, Sheng-Cai Shi
E-mail: wzhang@pmo.ac.cn;scshi@pmo.ac.cn
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Cite this article:
Qing-Xiao Ma(马卿效), Wen Zhang(张文), Pei-Zhan Li(李佩展), Zhi-Fa Feng(冯志发), Xian-Feng Zhou(周先锋), Zheng Wang(王争), Jia-Qiang Zhong(钟家强), Wei Miao(缪巍), Yuan Ren(任远), Jing Li(李婧), and Sheng-Cai Shi(史生才) Contribution of x-ray incident position dependence to energy resolution of Ti/Au transition-edge sensors 2026 Chin. Phys. B 35 038501
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