Electronic structure study of the intermetallic compound GdRhIn5

doi:10.1088/1674-1056/ae3123

Abstract Heavy-fermion compounds frequently host emergent phases - most notably non-BCS superconductivity and unconventional quantum criticality - whose microscopic origins can invariably be traced to the entanglement of itinerant and nearly localized electronic degrees of freedom. In this work, we carry out a systematic study on the electronic structure and quasiparticle features of the antiferromagnetic intermetallic compound GdRhIn$_5$, utilizing high-resolution angle-resolved photoemission spectroscopy (ARPES) measurements. Energy-dependent measurements reveal the coexistence of Fermi surface topologies with both quasi-two-dimensional and three-dimensional characteristics. Notably, the quasiparticle bands commonly observed in conventional cerium-based compounds are absent from the resonance data, likely due to the strong localization nature of the Gd 4f states within the compound. Temperature-dependent studies, combined with density functional theory (DFT) calculations, demonstrate that as temperature decreases, the electronic density of states (EDC) near the Fermi level increases, while the peak position of the MDC associated with the $\beta $ energy band shows a shrinking trend. This systematic exploration of GdRhIn$_5$'s electronic structure enhances our comprehension of the microscopic physical properties not only of GdRhIn$_5$ but also of the broader family of rare-earth-based 115 systems.

Keywords: heavy fermion 4f-electron electronic structure localized-itinerant

Received: 21 November 2025
Revised: 22 December 2025
Accepted manuscript online: 25 December 2025

PACS:	71.27.+a	(Strongly correlated electron systems; heavy fermions)
	72.15.Rn	(Localization effects (Anderson or weak localization))
	79.60.-i	(Photoemission and photoelectron spectra)
	71.20.Eh	(Rare earth metals and alloys)

Fund: Project supported by the National Key Research and Development Program of China (Grant No. 2022YFA1402201), the National Natural Science Foundation of China (Grant Nos. U2430209, 12122409, and 52394164), the Institute of Materials, China Academy of Engineering Physics (Grant No. TP02202408), and the Fund of Science and Technology on Surface Physics and Chemistry Laboratory (Grant No. XKFZ202304).

Corresponding Authors: Qiuyun Chen
E-mail: sheqiuyun@126.com

Cite this article:

Yulu He(贺宇璐), Bo Wang(王博), Xiangfei Yang(杨向飞), Dengpeng Yuan(袁登鹏), Wei Feng(冯卫), Yaobo Huang(黄耀波), and Qiuyun Chen(陈秋云) Electronic structure study of the intermetallic compound GdRhIn₅ 2026 Chin. Phys. B 35 037101

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Electronic structure study of the intermetallic compound GdRhIn₅