Other articles related with "passivation":
107801 Bin-Jie Li(李斌杰), Jia-Wen Li(李嘉文), Gen-Jie Yang(杨根杰), Meng-Ge Wu(吴梦鸽), and Jun-Sheng Yu(于军胜)
  Improving efficiency of n-i-p perovskite solar cells enabled by 3-carboxyphenylboronic acid additive
    Chin. Phys. B   2023 Vol.32 (10): 107801-107801 [Abstract] (131) [HTML 1 KB] [PDF 1557 KB] (86)
87301 Tao Zhang(张涛), Ruo-Han Li(李若晗), Kai Su(苏凯), Hua-Ke Su(苏华科), Yue-Guang Lv(吕跃广), Sheng-Rui Xu(许晟瑞), Jin-Cheng Zhang(张进成), and Yue Hao(郝跃)
  Proton irradiation-induced dynamic characteristics on high performance GaN/AlGaN/GaN Schottky barrier diodes
    Chin. Phys. B   2023 Vol.32 (8): 87301-087301 [Abstract] (176) [HTML 0 KB] [PDF 848 KB] (249)
68101 Ye Tu(涂野), Yong Li(李勇), and Guanchao Yin(殷官超)
  Back interface passivation for ultrathin Cu(In,Ga)Se2 solar cells with Schottky back contact: A trade-off of electrical effects
    Chin. Phys. B   2023 Vol.32 (6): 68101-068101 [Abstract] (197) [HTML 1 KB] [PDF 896 KB] (117)
16701 Jian-Ying Yue(岳建英), Xue-Qiang Ji(季学强), Shan Li(李山), Xiao-Hui Qi(岐晓辉), Pei-Gang Li(李培刚), Zhen-Ping Wu(吴真平), and Wei-Hua Tang(唐为华)
  Dramatic reduction in dark current of β-Ga2O3 ultraviolet photodectors via β-(Al0.25Ga0.75)2O3 surface passivation
    Chin. Phys. B   2023 Vol.32 (1): 16701-016701 [Abstract] (283) [HTML 1 KB] [PDF 2258 KB] (154)
117105 Zhihong Chen(陈治宏), Minhan Mi(宓珉瀚), Jielong Liu(刘捷龙), Pengfei Wang(王鹏飞), Yuwei Zhou(周雨威), Meng Zhang(张濛), Xiaohua Ma(马晓华), and Yue Hao(郝跃)
  A novel Si-rich SiN bilayer passivation with thin-barrier AlGaN/GaN HEMTs for high performance millimeter-wave applications
    Chin. Phys. B   2022 Vol.31 (11): 117105-117105 [Abstract] (342) [HTML 1 KB] [PDF 831 KB] (108)
107307 Shiqi Yu(余诗琪), Zhuang Xiong(熊壮), Zhenhan Wang(王振涵), Haitao Zhou(周海涛), Fei Ma(马飞), Zihan Qu(瞿子涵), Yang Zhao(赵洋), Xinbo Chu(楚新波), and Jingbi You(游经碧)
  Recent advances of interface engineering in inverted perovskite solar cells
    Chin. Phys. B   2022 Vol.31 (10): 107307-107307 [Abstract] (370) [HTML 0 KB] [PDF 8178 KB] (1522)
68503 Xue-Yue Xu(许雪月), Jun-Kai Jiang(蒋俊锴), Wei-Qiang Chen(陈伟强), Su-Ning Cui(崔素宁), Wen-Guang Zhou(周文广), Nong Li(李农), Fa-Ran Chang(常发冉), Guo-Wei Wang(王国伟), Ying-Qiang Xu(徐应强), Dong-Wei Jiang(蒋洞微), Dong-Hai Wu(吴东海), Hong-Yue Hao(郝宏玥), and Zhi-Chuan Niu(牛智川)
  Wet etching and passivation of GaSb-based very long wavelength infrared detectors
    Chin. Phys. B   2022 Vol.31 (6): 68503-068503 [Abstract] (415) [HTML 1 KB] [PDF 1187 KB] (136)
56108 Yuanchao Huang(黄渊超), Rong Wang(王蓉), Yiqiang Zhang(张懿强), Deren Yang(杨德仁), and Xiaodong Pi(皮孝东)
  Assessing the effect of hydrogen on the electronic properties of 4H-SiC
    Chin. Phys. B   2022 Vol.31 (5): 56108-056108 [Abstract] (421) [HTML 1 KB] [PDF 1043 KB] (189)
57101 Zhuo-Cheng Hong(洪卓呈), Pei Yao(姚佩), Yang Liu(刘杨), and Xu Zuo(左旭)
  First-principles calculations of the hole-induced depassivation of SiO2/Si interface defects
    Chin. Phys. B   2022 Vol.31 (5): 57101-057101 [Abstract] (316) [HTML 1 KB] [PDF 2302 KB] (64)
118503 Xiangwei Qu(瞿祥炜), Jingrui Ma(马精瑞), Siqi Jia(贾思琪), Zhenghui Wu(吴政辉), Pai Liu(刘湃), Kai Wang(王恺), and Xiao-Wei Sun(孙小卫)
  Improved blue quantum dot light-emitting diodes via chlorine passivated ZnO nanoparticle layer
    Chin. Phys. B   2021 Vol.30 (11): 118503-118503 [Abstract] (658) [HTML 1 KB] [PDF 1458 KB] (140)
107801 Wan-Duo Ma(马婉铎), Ya-Lin Li(李亚林), Pei Gong(龚裴), Ya-Hui Jia(贾亚辉), and Xiao-Yong Fang(房晓勇)
  Conductance and dielectric properties of hydrogen and hydroxyl passivated SiCNWs
    Chin. Phys. B   2021 Vol.30 (10): 107801-107801 [Abstract] (517) [HTML 0 KB] [PDF 1490 KB] (56)
47101 Wei Hu(胡伟), Ying Tian(田颖), Hong-Tao Xue(薛红涛), Wen-Sheng Li(李文生), and Fu-Ling Tang(汤富领)
  Passivation of PEA+ to MAPbI3 (110) surface states by first-principles calculations
    Chin. Phys. B   2021 Vol.30 (4): 47101- [Abstract] (380) [HTML 1 KB] [PDF 910 KB] (51)
128801 Quan-Zhen Sun(孙全震), Hong-Jie Jia(贾宏杰), Shu-Ying Cheng(程树英), Hui Deng(邓辉)\ccclink, Qiong Yan(严琼), Bi-Wen Duan(段碧雯), Cai-Xia Zhang(张彩霞), Qiao Zheng(郑巧), Zhi-Yuan Yang(杨志远), Yan-Hong Luo(罗艳红), Qing-Bo Men(孟庆波), and Shu-Juan Huang(黄淑娟)
  A 9% efficiency of flexible Mo-foil-based Cu2ZnSn(S, Se)4 solar cells by improving CdS buffer layer and heterojunction interface
    Chin. Phys. B   2020 Vol.29 (12): 128801- [Abstract] (502) [HTML 1 KB] [PDF 1463 KB] (222)
118801 Xi-Yuan Dai(戴希远), Yu-Chen Zhang(张宇宸), Liang-Xin Wang(王亮兴), Fei Hu(胡斐), Zhi-Yuan Yu(于志远), Shuai Li(李帅), Shu-Jie Li(李树杰), Xin-Ju Yang(杨新菊), and Ming Lu(陆明)
  Improving the performance of crystalline Si solar cell by high-pressure hydrogenation
    Chin. Phys. B   2020 Vol.29 (11): 118801- [Abstract] (359) [HTML 1 KB] [PDF 817 KB] (29)
37702 Yiqing Wu(吴怡清), Ke Tao(陶科), Shuai Jiang(姜帅), Rui Jia(贾锐), Ye Huang(黄也)
  Surface passivation in n-type silicon and its application insilicon drift detector
    Chin. Phys. B   2020 Vol.29 (3): 37702-037702 [Abstract] (558) [HTML 1 KB] [PDF 1954 KB] (174)
98802 Yun-Long Deng(邓云龙), Zhi-Yuan Xu(徐知源), Kai Cai(蔡凯), Fei Ma(马飞), Juan Hou(侯娟), Shang-Long Peng(彭尚龙)
  The effect of Mn-doped ZnSe passivation layer on the performance of CdS/CdSe quantum dot-sensitized solar cells
    Chin. Phys. B   2019 Vol.28 (9): 98802-098802 [Abstract] (688) [HTML 1 KB] [PDF 1814 KB] (154)
98201 Jianhui Bao(包建辉), Ke Tao(陶科), Yiren Lin(林苡任), Rui Jia(贾锐), Aimin Liu(刘爱民)
  The n-type Si-based materials applied on the front surface of IBC-SHJ solar cells
    Chin. Phys. B   2019 Vol.28 (9): 98201-098201 [Abstract] (741) [HTML 1 KB] [PDF 567 KB] (197)
97309 Sheng Zhang(张昇), Ke Wei(魏珂), Yang Xiao(肖洋), Xiao-Hua Ma(马晓华), Yi-Chuan Zhang(张一川), Guo-Guo Liu(刘果果), Tian-Min Lei(雷天民), Ying-Kui Zheng(郑英奎), Sen Huang(黄森), Ning Wang(汪宁), Muhammad Asif, Xin-Yu Liu(刘新宇)
  Effect of SiN: Hx passivation layer on the reverse gate leakage current in GaN HEMTs
    Chin. Phys. B   2018 Vol.27 (9): 97309-097309 [Abstract] (795) [HTML 1 KB] [PDF 892 KB] (216)
18803 Shoushuai Gao(高守帅), Zhenwu Jiang(姜振武), Li Wu(武莉), Jianping Ao(敖建平), Yu Zeng(曾玉), Yun Sun(孙云), Yi Zhang(张毅)
  Interfaces of high-efficiency kesterite Cu2ZnSnS(e)4 thin film solar cells
    Chin. Phys. B   2018 Vol.27 (1): 18803-018803 [Abstract] (864) [HTML 1 KB] [PDF 6884 KB] (1196)
18808 Huiyun Wei(卫会云), Dongmei Li(李冬梅), Xinhe Zheng(郑新和), Qingbo Meng(孟庆波)
  Recent progress of colloidal quantum dot based solar cells
    Chin. Phys. B   2018 Vol.27 (1): 18808-018808 [Abstract] (853) [HTML 1 KB] [PDF 8089 KB] (754)
18503 Shuaipu Zang(臧帅普), Yinglin Wang(王莹琳), Meiying Li(李美莹), Wei Su(苏蔚), Meiqi An(安美琦), Xintong Zhang(张昕彤), Yichun Liu(刘益春)
  Performance enhancement of ZnO nanowires/PbS quantum dot depleted bulk heterojunction solar cells with an ultrathin Al2O3 interlayer
    Chin. Phys. B   2018 Vol.27 (1): 18503-018503 [Abstract] (801) [HTML 1 KB] [PDF 1347 KB] (370)
18502 Chen Wang(王尘), Yihong Xu(许怡红), Cheng Li(李成), Haijun Lin(林海军)
  Improved performance of Ge n+/p diode by combining laser annealing and epitaxial Si passivation
    Chin. Phys. B   2018 Vol.27 (1): 18502-018502 [Abstract] (640) [HTML 1 KB] [PDF 552 KB] (193)
98103 Cai-Xia Hou(侯彩霞), Xin-He Zheng(郑新和), Rui Jia(贾锐), Ke Tao(陶科), San-Jie Liu(刘三姐), Shuai Jiang(姜帅), Peng-Fei Zhang(张鹏飞), Heng-Chao Sun(孙恒超), Yong-Tao Li(李永涛)
  Crystalline silicon surface passivation investigated by thermal atomic-layer-deposited aluminum oxide
    Chin. Phys. B   2017 Vol.26 (9): 98103-098103 [Abstract] (846) [HTML 0 KB] [PDF 983 KB] (434)
87802 Shuai Jiang(姜帅), Rui Jia(贾锐), Ke Tao(陶科), Caixia Hou(侯彩霞), Hengchao Sun(孙恒超), Zhiyong Yu(于志泳), Yongtao Li(李勇滔)
  Studies on the polycrystalline silicon/SiO2 stack as front surface field for IBC solar cells by two-dimensional simulations
    Chin. Phys. B   2017 Vol.26 (8): 87802-087802 [Abstract] (681) [HTML 1 KB] [PDF 1007 KB] (396)
37104 Wenbo Li(李文波), Ling Li(李玲), Fangfang Wang(王方方), Liu Zheng(郑柳), Jinghua Xia(夏经华), Fuwen Qin(秦福文), Xiaolin Wang(王晓琳), Yongping Li(李永平), Rui Liu(刘瑞), Dejun Wang(王德君), Yan Pan(潘艳), Fei Yang(杨霏)
  Passivation effects of phosphorus on 4H-SiC (0001) Si dangling bonds: A first-principles study
    Chin. Phys. B   2017 Vol.26 (3): 37104-037104 [Abstract] (754) [HTML 1 KB] [PDF 1782 KB] (599)
127301 Xiao-Jie Jia(贾晓洁), Chun-Lan Zhou(周春兰), Jun-Jie Zhu(朱俊杰), Su Zhou(周肃), Wen-Jing Wang(王文静)
  Effect of PECVD SiNx/SiOyNx-Si interface property on surface passivation of silicon wafer
    Chin. Phys. B   2016 Vol.25 (12): 127301-127301 [Abstract] (652) [HTML 1 KB] [PDF 362 KB] (935)
117307 Zhang Sheng (张昇), Wei Ke (魏珂), Yu Le (余乐), Liu Guo-Guo (刘果果), Huang Sen (黄森), Wang Xin-Hua (王鑫华), Pang Lei (庞磊), Zheng Ying-Kui (郑英奎), Li Yan-Kui (李艳奎), Ma Xiao-Hua (马晓华), Sun Bing (孙兵), Liu Xin-Yu (刘新宇)
  AlGaN/GaN high electron mobility transistorwith Al2O3+BCB passivation
    Chin. Phys. B   2015 Vol.24 (11): 117307-117307 [Abstract] (703) [HTML 1 KB] [PDF 1534 KB] (580)
78102 Zhao Lian-Feng (赵连锋), Tan Zhen (谭桢), Wang Jing (王敬), Xu Jun (许军)
  Improved interfacial and electrical properties of GaSb metal oxide semiconductor devices passivated with acidic (NH4)2S solution
    Chin. Phys. B   2014 Vol.23 (7): 78102-078102 [Abstract] (619) [HTML 1 KB] [PDF 879 KB] (395)
67701 Lin Meng (林猛), An Xia (安霞), Li Ming (黎明), Yun Quan-Xin (云全新), Li Min (李敏), Li Zhi-Qiang (李志强), Liu Peng-Qiang (刘朋强), Zhang Xing (张兴), Huang Ru (黄如)
  Fabricating GeO2 passivation layer by N2O plasma oxidation for Ge NMOSFETs application
    Chin. Phys. B   2014 Vol.23 (6): 67701-067701 [Abstract] (532) [HTML 1 KB] [PDF 410 KB] (713)
127303 Zhang Xiang (张祥), Liu Bang-Wu (刘邦武), Zhao Yan (赵彦), Li Chao-Bo (李超波), Xia Yang (夏洋)
  Influence of annealing temperature on passivation performance of thermal atomic layer deposition Al2O3 films
    Chin. Phys. B   2013 Vol.22 (12): 127303-127303 [Abstract] (631) [HTML 1 KB] [PDF 1326 KB] (1072)
105101 Li Juan (李娟), Luo Chong (罗翀), Meng Zhi-Guo (孟志国), Xiong Shao-Zhen (熊绍珍), Hoi Sing Kwok (郭海威)
  The mechanism of hydrogen plasma passivation for poly-crystalline silicon thin film
    Chin. Phys. B   2013 Vol.22 (10): 105101-105101 [Abstract] (627) [HTML 1 KB] [PDF 286 KB] (1129)
27305 Zhou Jian-Lin(周建林), Yu Jun-Sheng(于军胜), Yu Xin-Ge(于欣格), and Cai Xin-Yang(蔡欣洋)
  A high mobility C60 field-effect transistor with an ultrathin pentacene passivation layer and bathophenanthroline/metal bilayer electrodes
    Chin. Phys. B   2012 Vol.21 (2): 27305-027305 [Abstract] (1070) [HTML 1 KB] [PDF 1560 KB] (1537)
87307 Bi Zhi-Wei(毕志伟), Hu Zhen-Hua(胡振华), Mao Wei(毛维), Hao Yue(郝跃), Feng Qian(冯倩), Cao Yan-Rong(曹艳荣), Gao Zhi-Yuan(高志远), Zhang Jin-Cheng(张进成), Ma Xiao-Hua(马晓华), Chang Yong-Ming(常永明), Li Zhi-Ming(李志明), and Mei Nan(梅楠)
  Investigation of passivation effects in AlGaN/GaN metal–insulator–semiconductor high electron-mobility transistor by gate–drain conductance dispersion study
    Chin. Phys. B   2011 Vol.20 (8): 87307-087307 [Abstract] (1374) [HTML 1 KB] [PDF 179 KB] (1069)
17306 Ren Fan(任凡), Hao Zhi-Biao(郝智彪), Wang Lei(王磊), Wang Lai(汪莱), Li Hong-Tao (李洪涛), and Luo Yi(罗毅)
  Effects of SiNx on two-dimensional electron gas and current collapse of AlGaN/GaN high electron mobility transistors
    Chin. Phys. B   2010 Vol.19 (1): 17306-017306 [Abstract] (1408) [HTML 1 KB] [PDF 694 KB] (1437)
1601 Gu Wen-Ping(谷文萍), Duan Huan-Tao(段焕涛), Ni Jin-Yu(倪金玉), Hao Yue(郝跃), Zhang Jin-Cheng(张进城), Feng Qian(冯倩), and Ma Xiao-Hua(马晓华)
  High-electric-field-stress-induced degradation of SiN passivated AlGaN/GaN high electron mobility transistors
    Chin. Phys. B   2009 Vol.18 (4): 1601-1608 [Abstract] (1676) [HTML 1 KB] [PDF 1865 KB] (1044)
664 Bao Xiao-Qing(包晓清), Ge Dao-Han(葛道晗), Zhang Sheng(张圣), Li Jin-Peng(李金鹏), Zhou Ping(周萍), Jiao Ji-Wei(焦继伟), and Wang Yue-Lin(王跃林)
  Fast pore etching on high resistivity n-type silicon via photoelectrochemistry
    Chin. Phys. B   2009 Vol.18 (2): 664-670 [Abstract] (1048) [HTML 1 KB] [PDF 6966 KB] (511)
1405 Yue Yuan-Zheng(岳远征), Hao Yue(郝跃), Zhang Jin-Cheng(张进城), Feng Qian(冯倩), Ni Jin-Yu(倪金玉), and Ma Xiao-Hua(马晓华)
  A study on Al2O3 passivation in GaN MOS-HEMT by pulsed stress
    Chin. Phys. B   2008 Vol.17 (4): 1405-1409 [Abstract] (1668) [HTML 1 KB] [PDF 291 KB] (900)
932 Wei Shu-Yi (危书义), Wang Jian-Guang (汪建广), Ma Li (马丽), Xia Cong-Xin (夏从新), Yan Yu-Li (闫玉丽)
  Chemisorption of Fe on Au-passivated Si(001) surface
    Chin. Phys. B   2004 Vol.13 (6): 932-937 [Abstract] (1071) [HTML 0 KB] [PDF 214 KB] (448)
112 Hu Zhi-Hua (胡志华), Liao Xian-Bo (廖显伯), Liu Zu-Ming (刘祖明), Xia Chao-Feng (夏朝凤), Chen Ting-Jin (陈庭金)
  Hydrogen passivation of multi-crystalline silicon solar cells
    Chin. Phys. B   2003 Vol.12 (1): 112-115 [Abstract] (1071) [HTML 1 KB] [PDF 223 KB] (466)
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