Influence of annealing temperature on passivation performance of thermal atomic layer deposition Al2O3 films

doi:10.1088/1674-1056/22/12/127303

Abstract Chemical and field-effect passivation of atomic layer deposition (ALD) Al₂O₃ films are investigated, mainly by corona charging measurement. The interface structure and material properties are characterized by transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS), respectively. Passivation performance is improved remarkably by annealing at temperatures of 450 ℃ and 500 ℃, while the improvement is quite weak at 600 ℃, which can be attributed to the poor quality of chemical passivation. An increase of fixed negative charge density in the films during annealing can be explained by the Al₂O₃/Si interface structural change. The Al–OH groups play an important role in chemical passivation, and the Al–OH concentration in an as-deposited film subsequently determines the passivation quality of that film when it is annealed, to a certain degree.

Keywords: annealing atomic layer deposition Al₂O₃ passivation performance

Received: 25 April 2013
Revised: 03 July 2013
Accepted manuscript online:

PACS:	73.40.Lq	(Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
	88.40.H-	(Solar cells (photovoltaics))
	88.40.jj	(Silicon solar cells)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 61106060), the Knowledge Innovation Program of the Chinese Academy of Sciences (Grant No. Y2YF028001), and the National High Technology Research and Development Program of China (Grant No. 2012AA052401).

Corresponding Authors: Liu Bang-Wu
E-mail: liubangwu@ime.ac.cn

Cite this article:

Zhang Xiang (张祥), Liu Bang-Wu (刘邦武), Zhao Yan (赵彦), Li Chao-Bo (李超波), Xia Yang (夏洋) Influence of annealing temperature on passivation performance of thermal atomic layer deposition Al₂O₃ films 2013 Chin. Phys. B 22 127303

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Influence of annealing temperature on passivation performance of thermal atomic layer deposition Al2O3 films

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Influence of annealing temperature on passivation performance of thermal atomic layer deposition Al₂O₃ films