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Other articles related with "capacitance"：
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97301 |
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Design optimization of a silicon-germanium heterojunction negative capacitance gate-all-around tunneling field effect transistor based on a simulation study |
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Chin. Phys. B
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78502 |
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Model and data of optically controlled tunable capacitor in silicon single-photon avalanche diode |
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Chin. Phys. B
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38501 |
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High performance carrier stored trench bipolar transistor with dual shielding structure |
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Chin. Phys. B
2023 Vol.32 (3): 38501-038501
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17305 |
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High frequency doubling efficiency THz GaAs Schottky barrier diode based on inverted trapezoidal epitaxial cross-section structure |
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Chin. Phys. B
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[Abstract]
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58503 |
Bing Zhang(张冰), Congzhen Hu(胡从振), Youze Xin(辛有泽), Yaoxin Li(李垚鑫), Zhuoqi Guo(郭卓奇), Zhongming Xue(薛仲明), Li Dong(董力), Shanzhe Yu(于善哲), Xiaofei Wang(王晓飞), Shuyu Lei(雷述宇), and Li Geng(耿莉) |
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MOS-based model of four-transistor CMOS image sensor pixels for photoelectric simulation |
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Chin. Phys. B
2022 Vol.31 (5): 58503-058503
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127701 |
Yuan-Yuan Zhang(张元元), Xiao-Qing Sun(孙晓清), Jun-Shuai Chai(柴俊帅), Hao Xu(徐昊), Xue-Li Ma(马雪丽), Jin-Juan Xiang(项金娟), Kai Han(韩锴), Xiao-Lei Wang(王晓磊), and Wen-Wu Wang(王文武) |
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Insight into influence of thermodynamic coefficients on transient negative capacitance in Zr-doped HfO2 ferroelectric capacitors |
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Chin. Phys. B
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87301 |
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Accurate capacitance-voltage characterization of organic thin films with current injection |
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Chin. Phys. B
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18501 |
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Influences of increasing gate stem height on DC and RF performances of InAlAs/InGaAs InP-based HEMTs |
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Chin. Phys. B
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67202 |
Hao-Miao Yu(于浩淼), Yun He(何鋆) |
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How to characterize capacitance of organic optoelectronic devices accurately |
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Chin. Phys. B
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127702 |
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Singular variation property of elastic constants of piezoelectric ceramics shunted to negative capacitance |
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Chin. Phys. B
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127302 |
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Capacitance extraction method for a gate-induced quantum dot in silicon nanowire metal-oxide-semiconductor field-effect transistors |
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Chin. Phys. B
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108504 |
Yong Huang(黄涌), Zhi-You Guo(郭志友), Hui-Qing Sun(孙慧卿), Hong-Yong Huang(黄鸿勇) |
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Micro-light-emitting-diode array with dual functions of visible light communication and illumination |
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Chin. Phys. B
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86102 |
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Experimental design to measure the anchoring energy on substrate surface by using the alternating-current bridge |
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Chin. Phys. B
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77303 |
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Analytical capacitance model for 14 nm FinFET considering dual-k spacer |
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Chin. Phys. B
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118502 |
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Equivalent distributed capacitance model of oxide traps onfrequency dispersion of C-V curve for MOS capacitors |
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Chin. Phys. B
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78501 |
Bingqing Xie(解冰清), Bo Li(李博), Jinshun Bi(毕津顺), Jianhui Bu(卜建辉), Chi Wu(吴驰), Binhong Li(李彬鸿), Zhengsheng Han(韩郑生), Jiajun Luo(罗家俊) |
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Effect of cryogenic temperature characteristics on 0.18-μm silicon-on-insulator devices |
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Chin. Phys. B
2016 Vol.25 (7): 78501-078501
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37307 |
Lie-Feng Feng(冯列峰), Kun Zhao(赵昆), Hai-Tao Dai(戴海涛), Shu-Guo Wang(王树国), Xiao-Wei Sun(孙小卫) |
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Charge recombination mechanism to explain the negative capacitance in dye-sensitized solar cells |
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Chin. Phys. B
2016 Vol.25 (3): 37307-037307
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16801 |
Yike Huang(黄一珂), Xiaohong Liu(刘晓红), Shu Li(李姝), Tianying Yan(言天英) |
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Development of mean-field electrical double layer theory |
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Chin. Phys. B
2016 Vol.25 (1): 16801-016801
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117303 |
Wang Jin-Hua (王锦华), Quan Jun (全军) |
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Dynamic responses of series parallel-plate mesoscopic capacitors to time-dependent external voltage |
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Chin. Phys. B
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97201 |
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Effect of CuPc and MoO3 co-evaporated layer on the conductivity of organic light emitting diodes |
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Chin. Phys. B
2015 Vol.24 (9): 97201-097201
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37303 |
Fan Min-Min (范敏敏), Xu Jing-Ping (徐静平), Liu Lu (刘璐), Bai Yu-Rong (白玉蓉), Huang Yong (黄勇) |
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Influences of fringing capacitance on threshold voltage and subthreshold swing of a GeOI metal-oxide-semiconductor field-effect transistor |
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Chin. Phys. B
2015 Vol.24 (3): 37303-037303
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18801 |
Kh. S. Karimov, Khaulah Sulaiman, Zubair Ahmad, Khakim M. Akhmedov, A. Mateen |
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Novel pressure and displacement sensors based on carbon nanotubes |
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Chin. Phys. B
2015 Vol.24 (1): 18801-018801
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116102 |
Shi Li-Yang (时俪洋), Shen Bo (沈波), Yan Jian-Chang (闫建昌), Wang Jun-Xi (王军喜), Wang Ping (王平) |
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Localized deep levels in AlxGa1-xN epitaxial films with various Al compositions |
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Chin. Phys. B
2014 Vol.23 (11): 116102-116102
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116101 |
Ye Wen-Jiang (叶文江), Xing Hong-Yu (邢红玉), Cui Wen-Jing (崔文静), Zhou Xuan (周璇), Sun Yu-Bao (孙玉宝), Zhang Zhi-Dong (张志东) |
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Determining the sum of flexoelectric coefficients in nematic liquid crystals by the capacitance method |
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Chin. Phys. B
2014 Vol.23 (11): 116101-116101
[Abstract]
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[PDF 359 KB]
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77305 |
Yang Zhuo (杨卓), Yang Jing-Zhi (杨靖治), Huang Yong (黄永), Zhang Kai (张锴), Hao Yue (郝跃) |
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Effect of alumina thickness on Al2O3/InP interface with post deposition annealing in oxygen ambient |
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Chin. Phys. B
2014 Vol.23 (7): 77305-077305
[Abstract]
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57301 |
Liao Xue-Yang (廖雪阳), Zhang Kai (张凯), Zeng Chang (曾畅), Zheng Xue-Feng (郑雪峰), En Yun-Fei (恩云飞), Lai Ping (来萍), Hao Yue (郝跃) |
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Interface states in Al2O3/AlGaN/GaN metal-oxide-semiconductor structure by frequency dependent conductance technique |
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Chin. Phys. B
2014 Vol.23 (5): 57301-057301
[Abstract]
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128402 |
Gong Wei (龚伟), Xu Zheng (徐征), Zhao Su-Ling (赵谡玲), Liu Xiao-Dong (刘晓东), Fan Xing (樊星), Yang Qian-Qian (杨倩倩), Kong Chao (孔超) |
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Effects of NPB anode buffer layer on charge collection in ZnO/MEH-PPV hybrid solar cells |
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Chin. Phys. B
2013 Vol.22 (12): 128402-128402
[Abstract]
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[PDF 451 KB]
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87104 |
Li Liang (李亮), Yang Lin-An (杨林安), Zhou Xiao-Wei (周小伟), Zhang Jin-Cheng (张进成), Hao Yue (郝跃) |
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Point defect determination by photoluminescence and capacitance-voltage characterization in a GaN terahertz Gunn diode |
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Chin. Phys. B
2013 Vol.22 (8): 87104-087104
[Abstract]
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[HTML 1 KB]
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27507 |
Liu Rong-Deng (刘荣灯), Liu Yun-Tao (刘蕴韬), Chen Dong-Feng (陈东风), He Lun-Hua (何伦华), Yan Li-Qin (闫丽琴), Wang Zhi-Cui (王志翠), Sun Yang (孙阳), Wang Fang-Wei (王芳卫) |
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Al-doping-induced magnetocapacitance in the multiferroic CuCrS2 |
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Chin. Phys. B
2013 Vol.22 (2): 27507-027507
[Abstract]
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[HTML 1 KB]
[PDF 560 KB]
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104101 |
Chen Long-Chao (陈龙超), Fan Wen-Hui (范文慧) |
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Finger capacitance of a terahertz photomixer in low-temperature-grown GaAs using the finite element method |
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Chin. Phys. B
2012 Vol.21 (10): 104101-104101
[Abstract]
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40601 |
Khasan Sanginovich Karimov, Muhammad Tariq Saeed, Fazal Ahmad Khalid, and Syed Abdul Moiz |
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Effect of displacement on resistance and capacitance of polyaniline film |
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Chin. Phys. B
2011 Vol.20 (4): 40601-040601
[Abstract]
(1437)
[HTML 1 KB]
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27306 |
Li Nuo(李诺),Gao Xin-Dong(高歆栋),Xie Zuo-Ti(谢作提), Sun Zheng-Yi(孙正义), Ding Xun-Min(丁训民),and Hou Xiao-Yuan(侯晓远) |
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Negative capacitance in doped bi-layer organic light-emitting devices |
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Chin. Phys. B
2011 Vol.20 (2): 27306-027306
[Abstract]
(1395)
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[PDF 689 KB]
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27304 |
Ma Xiao-Hua(马晓华), Pan Cai-Yuan(潘才渊), Yang Li-Yuan(杨丽媛), Yu Hui-You(于惠游), Yang Ling(杨凌), Quan Si(全思), Wang Hao(王昊), Zhang Jin-Cheng(张进成), and Hao Yue(郝跃) |
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Characterization of Al2O3/GaN/AlGaN/GaN metal–insulator–semiconductor high electron mobility transistors with different gate recess depths |
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Chin. Phys. B
2011 Vol.20 (2): 27304-027304
[Abstract]
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18502 |
Xu Xiao-Bo(徐小波), Zhang He-Ming(张鹤鸣), Hu Hui-Yong(胡辉勇), Ma Jian-Li(马建立), and Xu Li-Jun(许立军) |
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Analytical base–collector depletion capacitance in vertical SiGe heterojunction bipolar transistors fabricated on CMOS-compatible silicon on insulator |
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Chin. Phys. B
2011 Vol.20 (1): 18502-018502
[Abstract]
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18101 |
Quan Si(全思), Hao Yue(郝跃), Ma Xiao-Hua(马晓华), and Yu Hui-You(于惠游) |
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Investigation of AlGaN/GaN fluorine plasma treatment enhancement-mode high electronic mobility transistors by frequency-dependent capacitance and conductance analysis |
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Chin. Phys. B
2011 Vol.20 (1): 18101-018101
[Abstract]
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[HTML 1 KB]
[PDF 634 KB]
(1106)
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97302 |
Wang Xin-Hua(王鑫华), Zhao Miao(赵妙), Liu Xin-Yu(刘新宇), Pu Yan(蒲颜), Zheng Ying-Kui(郑英奎), and Wei Ke(魏珂) |
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The physical process analysis of the capacitance–voltage characteristics of AlGaN/AlN/GaN high electron mobility transistors |
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Chin. Phys. B
2010 Vol.19 (9): 97302-097302
[Abstract]
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[PDF 193 KB]
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57701 |
Ye Chao(叶超) and Ning Zhao-Yuan(宁兆元) |
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Effect of F doping on capacitance－voltage characteristics of SiCOH low-k films metal－insulator－semiconductor structure |
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Chin. Phys. B
2010 Vol.19 (5): 57701-057701
[Abstract]
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[HTML 1 KB]
[PDF 209 KB]
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47308 |
Li Wei(李卫), Xu Ling(徐岭), Zhao Wei-Ming(赵伟明), Ding Hong-Lin(丁宏林), Ma Zhong-Yuan(马忠元), Xu Jun(徐骏), and Chen Kun-Ji(陈坤基) |
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Capacitance characteristics of metal-oxide-semiconductor capacitors with a single layer of embedded nickel nanoparticles for the application of nonvolatile memory |
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Chin. Phys. B
2010 Vol.19 (4): 47308-047308
[Abstract]
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[HTML 1 KB]
[PDF 1030 KB]
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1879 |
Chen Wei-Bing(陈卫兵), Xu Jing-Ping(徐静平), Lai Pui-To(黎沛涛), Li Yan-Ping(李艳萍), Xu Sheng-Guo(许胜国), and Chan Chu-Lok(陈铸略) |
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Electrical characteristics of MOS capacitor with HfTiON gate dielectric and HfTiSiON interlayer |
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Chin. Phys. B
2006 Vol.15 (8): 1879-1882
[Abstract]
(1500)
[HTML 1 KB]
[PDF 381 KB]
(622)
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2297 |
Wang Yuan(王源), Jia Song(贾嵩), Chen Zhong-Jian(陈中建), and Ji Li-Jiu(吉利久) |
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Low-parasitic ESD protection strategy for RF ICs in 0.35μm CMOS process |
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Chin. Phys. B
2006 Vol.15 (10): 2297-2305
[Abstract]
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676 |
Bao Zhong-xing (鲍忠兴), V. H. Schmidt , N. S. Dalal , C. S. Tu , N. J. Pinto, Liu Cui-xia(柳翠霞), Li Yu-liang(李玉良), Zhu Dao-ben(朱道本) |
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ELECTRICAL PROPERTIES, EQUATIONS OF STATE AND PHASE TRANSITION IN SOLID C60 AT HIGH PRESSURE |
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Chin. Phys. B
2000 Vol.9 (9): 676-679
[Abstract]
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