| INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
Prev
Next
|
|
|
Model and data of optically controlled tunable capacitor in silicon single-photon avalanche diode |
| Mei-Ling Zeng(曾美玲)1, Yang Wang(汪洋)1, Xiang-Liang Jin(金湘亮)1,†, Yan Peng(彭艳)2, and Jun Luo(罗均)2 |
1 School of Physics and Electronics, Hunan Normal University, Changsha 410081, China;
2 School of Mechatronic Engineering and Automation, Shanghai University, Shanghai 200444, China |
|
|
|
|
Abstract This paper reports the photocapacitance effect of silicon-based single-photon avalanche diodes (SPADs), and the frequency scattering phenomenon of capacitance. The test results of the small-signal capacitance-voltage method show that light can cause the capacitance of a SPAD device to increase under low-frequency conditions, and the photocapacitance exhibits frequency-dependent characteristics. Since the devices are fabricated based on the standard bipolar-CMOS-DMOS process, this study attributes the above results to the interfacial traps formed by Si-SiO2, and the illumination can effectively reduce the interfacial trap lifetime, leading to changes in the junction capacitance inside the SPAD. Accordingly, an equivalent circuit model considering the photocapacitance effect is also proposed in this paper. Accurate analysis of the capacitance characteristics of SPAD has important scientific significance and application value for studying the energy level distribution of device interface defect states and improving the interface quality.
|
Received: 30 May 2022
Revised: 27 September 2022
Accepted manuscript online: 07 November 2022
|
|
PACS:
|
85.60.Dw
|
(Photodiodes; phototransistors; photoresistors)
|
| |
85.60.Bt
|
(Optoelectronic device characterization, design, and modeling)
|
| |
85.30.De
|
(Semiconductor-device characterization, design, and modeling)
|
|
| Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 62174052 and 61827812), Hunan Science and Technology Department Huxiang High-level Talent Gathering Project (Grant No. 2019RS1037), Innovation Project of Science and Technology Department of Hunan Province (Grant No. 2020GK2018), and Postgraduate Scientific Research Innovation Project of Hunan Province (Grant No. QL20210131). |
Corresponding Authors:
Xiang-Liang Jin
E-mail: jinxl@hunnu.edu.cn
|
Cite this article:
Mei-Ling Zeng(曾美玲), Yang Wang(汪洋), Xiang-Liang Jin(金湘亮), Yan Peng(彭艳), and Jun Luo(罗均) Model and data of optically controlled tunable capacitor in silicon single-photon avalanche diode 2023 Chin. Phys. B 32 078502
|
[1] Habib M H U and McFarlane N 2016 IEEE Electron. Device Lett. 38 60
[2] Chen H, Chen X, Lu J, et al. 2020 IEEE Photon. J. 12 1
[3] Jradi K, Pellion D and Ginhac D 2014 Sensors 14 22773
[4] Nolet F, Dubois F, Roy N, et al. 2018 Nucl. Instrum. Methods Phys. Res. A 912 29
[5] Gramuglia F, Keshavarzian P, Kizilkan E, et al. 2021 IEEE J. Sel. Top. Quantum Electron. 28 1
[6] Shen G Y, Zheng T X, Du B C, et al. 2018 Chin. Phys. Lett. 35 114204
[7] Lee M J, Ximenes A R, Padmanabhan P, et al. 2018 IEEE J. Sel. Top. Quantum Electron. 24
[8] Chen L, Zhang S, Ye Y, et al. 2020 Frontiers Phys. 8 585871
[9] Jegannathan G, Van den Dries T and Kuijk M 2020 Sensors 20 7105
[10] Sieleghem E V, Suss A, Boulenc P, ¨ et al. 2021 IEEE Electron. Device Lett. 42 879
[11] Sanzaro M, Gattari P, Villa F, et al. 2017 IEEE J. Sel. Top. Quantum Electron. 24 1
[12] Wang W, Wang G, Zeng H, et al. 2019 Mod. Phys. Lett. B 33 1950099
[13] Han D, Xu Y, Sun F, et al. 2020 Optik 212 164692
[14] Dervić A, Hofbauer M, Goll B, et al. 2020 IEEE Photon. Technol. Lett. 33 139
[15] Fang Y Q, Luo K, Gao X G, et al. 2020 Rev. Sci. Instrum. 91 123106
[16] Deng S, Li X, Chen M, et al. 2021 IEEE Photon. Technol. Lett. 33 293
[17] Ha W Y, Park E, Park B, et al. 2022 Opt. Express 30 14958
[18] Gramuglia F, Keshavarzian P, Kizilkan E, et al. 2022 IEEE J. Sel. Top. Quantum Electron. 28 1
[19] Alirezaei I S, Andre N, Sedki A, et al. 2021 IEEE J. Sel. Top. Quantum Electron. 28 1
[20] Henry C H 1973 J. Lumin. 7 127
[21] Tan, J, Das, et al. 1997 Appl. Phys. Lett. 70 2280
[22] Ma X K, Huang Y Q, Yang Y W, et al. 2019 Opt. Quantum Electron. 51 44
[23] Sengouga N, Boumaraf R, Mari R H, et al. 2015 Mater. Sci. Semiconductor Process. 36 156
[24] Sedghi M and Gholami A 2020 Trans. Electr. Electron. Mater. 21 394
[25] Zeng M L, Wang Y, Jin X L, et al. 2021 J. Nanoelectron. Optoelectron. 16 546
[26] Finkelstein H, Hsu M J and Esener S C 2006 IEEE Electron. Device Lett. 27 887 |
| No Suggested Reading articles found! |
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
Cited |
|
|
|
|
Altmetric
|
|
blogs
Facebook pages
Wikipedia page
Google+ users
|
Online attention
Altmetric calculates a score based on the online attention an article receives. Each coloured thread in the circle represents a different type of online attention. The number in the centre is the Altmetric score. Social media and mainstream news media are the main sources that calculate the score. Reference managers such as Mendeley are also tracked but do not contribute to the score. Older articles often score higher because they have had more time to get noticed. To account for this, Altmetric has included the context data for other articles of a similar age.
View more on Altmetrics
|
|
|
