Capacitance characteristics of metal-oxide-semiconductor capacitors with a single layer of embedded nickel nanoparticles for the application of nonvolatile memory

doi:10.1088/1674-1056/19/4/047308

Abstract This paper reports that metal-oxide-semiconductor (MOS) capacitors with a single layer of Ni nanoparticles were successfully fabricated by using electron-beam evaporation and rapid thermal annealing for application to nonvolatile memory. Experimental scanning electron microscopy images showed that Ni nanoparticles of about 5 nm in diameter were clearly embedded in the SiO₂ layer on p-type Si (100). Capacitance--voltage measurements of the MOS capacitor show large flat-band voltage shifts of 1.8 V, which indicate the presence of charge storage in the nickel nanoparticles. In addition, the charge-retention characteristics of MOS capacitors with Ni nanoparticles were investigated by using capacitance--time measurements. The results showed that there was a decay of the capacitance embedded with Ni nanoparticles for an electron charge after 10$^{4}$ s. But only a slight decay of the capacitance originating from hole charging was observed. The present results indicate that this technique is promising for the efficient formation or insertion of metal nanoparticles inside MOS structures.

Keywords: metal-oxide-semiconductor capacitance--voltage capacitance--time Ni nanoparticles

Received: 19 March 2009
Revised: 20 July 2009
Accepted manuscript online:

PACS:	84.32.Tt	(Capacitors)
	73.40.Qv	(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
	81.15.Jj	(Ion and electron beam-assisted deposition; ion plating)
	85.35.-p	(Nanoelectronic devices)
	61.72.Cc	(Kinetics of defect formation and annealing)
	85.30.De	(Semiconductor-device characterization, design, and modeling)

Fund: Project supported by National Natural Science Foundation of China (Grant Nos.~10874070, 60976001, and 50872051), Natural Science Foundation of Jiangsu Province of China (Grant No.~BK2008253), State Key Program for Basic Research of China (Grant Nos.~2007C

Cite this article:

Li Wei(李卫), Xu Ling(徐岭), Zhao Wei-Ming(赵伟明), Ding Hong-Lin(丁宏林), Ma Zhong-Yuan(马忠元), Xu Jun(徐骏), and Chen Kun-Ji(陈坤基) Capacitance characteristics of metal-oxide-semiconductor capacitors with a single layer of embedded nickel nanoparticles for the application of nonvolatile memory 2010 Chin. Phys. B 19 047308

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Capacitance characteristics of metal-oxide-semiconductor capacitors with a single layer of embedded nickel nanoparticles for the application of nonvolatile memory

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