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Effect of CuPc and MoO3 co-evaporated layer on the conductivity of organic light emitting diodes |
He Ze-Shang (何泽尚), Yu Hao-Miao (于浩淼), Peng Huan (彭欢), Hou Xiao-Yuan (侯晓远) |
State Key Laboratory of Surface Physics, Key Laboratory of Micro and Nano Photonic Structures (Ministry of Education) and Collaborative Innovation Center of Advanced Microstructures, Fudan University, Shanghai 200433, China |
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Abstract Devices with copper phthalocyanine (CuPc):molybdenum trioxide (MoO3) co-evaporated layer were fabricated and the current-voltage (I-V) and capacitance-voltage (C-V) characteristics were measured. It has been found that for a given voltage, the current of the device with a co-evaporated layer is higher than those without the co-evaporated layer and it reaches the highest value if the ratio of MoO3 to CuPc is 1:1. Meanwhile, the C-V characteristics showed that only free holes exist in the function layer consisting of pure CuPc. However, charge transfer (CT) complexes exist in the function layer of a CuPc:MoO3 mixture. The charge transfer complexes do not contribute to the transport of the device efficiently under low applied fields but are disassociated into free carriers rapidly at applied fields higher than 1.7× 105 V/cm, which greatly increases the conductivity.
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Received: 03 February 2015
Revised: 03 April 2015
Accepted manuscript online:
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PACS:
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72.20.Jv
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(Charge carriers: generation, recombination, lifetime, and trapping)
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81.05.Fb
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(Organic semiconductors)
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72.80.Le
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(Polymers; organic compounds (including organic semiconductors))
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Fund: Project supported by the Science and Technology Commission of Shanghai Municipality, China, the National Science and Technology Major Project of the Ministry of Science and Technology of China, and the National Natural Science Foundation of China. |
Corresponding Authors:
Hou Xiao-Yuan
E-mail: xyhou@fudan.edu.cn
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Cite this article:
He Ze-Shang (何泽尚), Yu Hao-Miao (于浩淼), Peng Huan (彭欢), Hou Xiao-Yuan (侯晓远) Effect of CuPc and MoO3 co-evaporated layer on the conductivity of organic light emitting diodes 2015 Chin. Phys. B 24 097201
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