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Other articles related with "GaN-based"：
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117304 |
Yinlu Gao(高寅露), Kai Cheng(程开), Xue Jiang(蒋雪), and Jijun Zhao(赵纪军) |
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Interface engineering of transition metal dichalcogenide/GaN heterostructures: Modified broadband for photoelectronic performance |
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Chin. Phys. B
2022 Vol.31 (11): 117304-117304
[Abstract]
(359)
[HTML 1 KB]
[PDF 3878 KB]
(173)
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77801 |
Yi Li(李毅), Mei Ge(葛梅), Meiyu Wang(王美玉), Youhua Zhu(朱友华), and Xinglong Guo(郭兴龙) |
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Effect of surface plasmon coupling with radiating dipole on the polarization characteristics of AlGaN-based light-emitting diodes |
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Chin. Phys. B
2022 Vol.31 (7): 77801-077801
[Abstract]
(332)
[HTML 1 KB]
[PDF 1655 KB]
(37)
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47802 |
Lu Xue(薛露), Yi Li(李毅), Mei Ge(葛梅), Mei-Yu Wang(王美玉), and You-Hua Zhu(朱友华) |
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Optical polarization characteristics for AlGaN-based light-emitting diodes with AlGaN multilayer structure as well layer |
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Chin. Phys. B
2021 Vol.30 (4): 47802-
[Abstract]
(286)
[HTML 1 KB]
[PDF 711 KB]
(28)
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27303 |
Jin-Jin Tang(汤金金), Gui-Peng Liu(刘贵鹏), Jia-Yu Song(宋家毓), Gui-Juan Zhao(赵桂娟), and Jian-Hong Yang(杨建红) |
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Analysis of the decrease of two-dimensional electron gas concentration in GaN-based HEMT caused by proton irradiation |
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Chin. Phys. B
2021 Vol.30 (2): 27303-0
[Abstract]
(408)
[HTML 1 KB]
[PDF 761 KB]
(107)
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67203 |
Ya-Wen Zhao(赵亚文), Liu-An Li(李柳暗), Tao-Tao Que(阙陶陶), Qiu-Ling Qiu(丘秋凌), Liang He(何亮), Zhen-Xing Liu(刘振兴), Jin-Wei Zhang(张津玮), Qian-Shu Wu(吴千树), Jia Chen(陈佳), Zhi-Sheng Wu(吴志盛), Yang Liu(刘扬) |
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Experimental evaluation of interface states during time-dependent dielectric breakdown of GaN-based MIS-HEMTs with LPCVD-SiNx gate dielectric |
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Chin. Phys. B
2020 Vol.29 (6): 67203-067203
[Abstract]
(640)
[HTML 1 KB]
[PDF 770 KB]
(154)
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47802 |
Jiang-Dong Gao(高江东), Jian-Li Zhang(张建立), Zhi-Jue Quan(全知觉), Jun-Lin Liu(刘军林), Feng-Yi Jiang(江风益) |
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Dependence of limited radiative recombination rate of InGaN-based light-emitting diode on lattice temperature with high injection |
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Chin. Phys. B
2020 Vol.29 (4): 47802-047802
[Abstract]
(578)
[HTML 1 KB]
[PDF 901 KB]
(144)
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67305 |
Tian-Ran Zhang(张天然), Fang Fang(方芳), Xiao-Lan Wang(王小兰), Jian-Li Zhang(张建立), Xiao-Ming Wu(吴小明), Shuan Pan(潘栓), Jun-Lin Liu(刘军林), Feng-Yi Jiang(江风益) |
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Aging mechanism of GaN-based yellow LEDs with V-pits |
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Chin. Phys. B
2019 Vol.28 (6): 67305-067305
[Abstract]
(647)
[HTML 1 KB]
[PDF 1504 KB]
(190)
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47305 |
Wei Mao(毛维), Hai-Yong Wang(王海永), Peng-Hao Shi(石朋毫), Xiao-Fei Wang(王晓飞), Ming Du(杜鸣), Xue-Feng Zheng(郑雪峰), Chong Wang(王冲), Xiao-Hua Ma(马晓华), Jin-Cheng Zhang(张进成), Yue Hao(郝跃) |
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Low specific on-resistance GaN-based vertical heterostructure field effect transistors with nonuniform doping superjunctions |
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Chin. Phys. B
2018 Vol.27 (4): 47305-047305
[Abstract]
(656)
[HTML 1 KB]
[PDF 1596 KB]
(265)
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28101 |
Yao Xing(邢瑶), De-Gang Zhao(赵德刚), De-Sheng Jiang(江德生), Xiang Li(李翔), Zong-Shun Liu(刘宗顺), Jian-Jun Zhu(朱建军), Ping Chen(陈平), Jing Yang(杨静), Wei Liu(刘炜), Feng Liang(梁锋), Shuang-Tao Liu(刘双韬), Li-Qun Zhang(张立群), Wen-Jie Wang(王文杰), Mo Li(李沫), Yuan-Tao Zhang(张源涛), Guo-Tong Du(杜国同) |
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Suppression of electron and hole overflow in GaN-based near-ultraviolet laser diodes |
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Chin. Phys. B
2018 Vol.27 (2): 28101-028101
[Abstract]
(635)
[HTML 0 KB]
[PDF 355 KB]
(272)
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124210 |
Feng Liang(梁锋), De-Gang Zhao(赵德刚), De-Sheng Jiang(江德生), Zong-Shun Liu(刘宗顺), Jian-Jun Zhu(朱建军), Ping Chen(陈平), Jing Yang(杨静), Wei Liu(刘炜), Shuang-Tao Liu(刘双韬), Yao Xing(邢瑶), Li-Qun Zhang(张立群), Wen-Jie Wang(王文杰), Mo Li(李沫), Yuan-Tao Zhang(张源涛), Guo-Tong Du(杜国同) |
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Output light power of InGaN-based violet laser diodes improved by using a u-InGaN/GaN/AlGaN multiple upper waveguide |
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Chin. Phys. B
2017 Vol.26 (12): 124210-124210
[Abstract]
(968)
[HTML 1 KB]
[PDF 379 KB]
(253)
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114203 |
Feng Liang(梁锋), De-Gang Zhao(赵德刚), De-Sheng Jiang(江德生), Zong-Shun Liu(刘宗顺), Jian-Jun Zhu(朱建军), Ping Chen(陈平), Jing Yang(杨静), Wei Liu(刘炜), Xiang Li(李翔), Shuang-Tao Liu(刘双韬), Yao Xing(邢瑶), Li-Qun Zhang(张立群), Mo Li(李沫), Jian Zhang(张健) |
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Different influences of u-InGaN upper waveguide on the performance of GaN-based blue and green laser diodes |
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Chin. Phys. B
2017 Vol.26 (11): 114203-114203
[Abstract]
(600)
[HTML 1 KB]
[PDF 317 KB]
(207)
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88505 |
Ping Qin(秦萍), Wei-Dong Song(宋伟东), Wen-Xiao Hu(胡文晓), Yuan-Wen Zhang(张苑文), Chong-Zhen Zhang(张崇臻), Ru-Peng Wang(王汝鹏), Liang-Liang Zhao(赵亮亮), Chao Xia(夏超), Song-Yang Yuan(袁松洋), Yi-an Yin(尹以安), Shu-Ti Li(李述体), Shi-Chen Su(宿世臣) |
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Improved performance of near UV light-emitting diodes with a composition-graded p-AlGaN irregular sawtooth electron-blocking layer |
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Chin. Phys. B
2016 Vol.25 (8): 88505-088505
[Abstract]
(674)
[HTML 1 KB]
[PDF 315 KB]
(403)
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68506 |
Zhao Li-Xia (赵丽霞), Yu Zhi-Guo (于治国), Sun Bo (孙波), Zhu Shi-Chao (朱石超), An Ping-Bo (安平博), Yang Chao (杨超), Liu Lei (刘磊), Wang Jun-Xi (王军喜), Li Jin-Min (李晋闽) |
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Progress and prospects of GaN-based LEDs using nanostructures |
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Chin. Phys. B
2015 Vol.24 (6): 68506-068506
[Abstract]
(800)
[HTML 1 KB]
[PDF 1406 KB]
(3767)
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27303 |
Mi Min-Han (宓珉瀚), Zhang Kai (张凯), Zhao Sheng-Lei (赵胜雷), Wang Chong (王冲), Zhang Jin-Cheng (张进成), Ma Xiao-Hua (马晓华), Hao Yue (郝跃) |
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Improved performance of AlGaN/GaN HEMT by N2O plasma pre-treatment |
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Chin. Phys. B
2015 Vol.24 (2): 27303-027303
[Abstract]
(667)
[HTML 0 KB]
[PDF 344 KB]
(503)
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118507 |
Ma Li (马莉), Shen Guang-Di (沈光地), Liu Jian-Peng (刘建朋), Gao Zhi-Yuan (高志远), Xu Chen (徐晨), Wang Xun (王勋) |
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Theoretical and experimental analysis of the effects of the series resistance on luminous efficacy in GaN-based light emitting diodes |
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Chin. Phys. B
2014 Vol.23 (11): 118507-118507
[Abstract]
(512)
[HTML 1 KB]
[PDF 806 KB]
(825)
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87305 |
Mao Wei (毛维), She Wei-Bo (佘伟波), Yang Cui (杨翠), Zhang Chao (张超), Zhang Jin-Cheng (张进成), Ma Xiao-Hua (马晓华), Zhang Jin-Feng (张金风), Liu Hong-Xia (刘红侠), Yang Lin-An (杨林安), Zhang Kai (张凯), Zhao Sheng-Lei (赵胜雷), Chen Yong-He (陈永和), Zheng Xue-Feng (郑雪峰), Hao Yue (郝跃) |
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A two-dimensional fully analytical model with polarization effect for off-state channel potential and electric field distributions of GaN-based field-plated high electron mobility transistor |
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Chin. Phys. B
2014 Vol.23 (8): 87305-087305
[Abstract]
(554)
[HTML 1 KB]
[PDF 1948 KB]
(525)
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77304 |
Mi Min-Han (宓珉瀚), Zhang Kai (张凯), Chen Xing (陈兴), Zhao Sheng-Lei (赵胜雷), Wang Chong (王冲), Zhang Jin-Cheng (张进成), Ma Xiao-Hua (马晓华), Hao Yue (郝跃) |
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Non-recessed-gate quasi-E-mode double heterojunction AlGaN/GaN high electron mobility transistor with high breakdown voltage |
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Chin. Phys. B
2014 Vol.23 (7): 77304-077304
[Abstract]
(619)
[HTML 1 KB]
[PDF 433 KB]
(532)
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58502 |
Cai Jin-Xin (蔡金鑫), Sun Hui-Qing (孙慧卿), Zheng Huan (郑欢), Zhang Pan-Jun (张盼君), Guo Zhi-You (郭志友) |
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Enhanced performance of GaN-based light-emitting diodes with InGaN/GaN superlattice barriers |
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Chin. Phys. B
2014 Vol.23 (5): 58502-058502
[Abstract]
(543)
[HTML 1 KB]
[PDF 433 KB]
(480)
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48502 |
Yang Bin (杨斌), Guo Zhi-You (郭志友), Xie Nan (解楠), Zhang Pan-Jun (张盼君), Li Jing (李婧), Li Fang-Zheng (李方正), Lin Hong (林宏), Zheng Huan (郑欢), Cai Jin-Xin (蔡金鑫) |
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A GaN–AlGaN–InGaN last quantum barrier in an InGaN/GaN multiple-quantum-well blue LED |
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Chin. Phys. B
2014 Vol.23 (4): 48502-048502
[Abstract]
(568)
[HTML 1 KB]
[PDF 1099 KB]
(826)
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27302 |
Ma Xiao-Hua (马晓华), Lü Min (吕敏), Pang Lei (庞磊), Jiang Yuan-Qi (姜元祺), Yang Jing-Zhi (杨靖治), Chen Wei-Wei (陈伟伟), Liu Xin-Yu (刘新宇) |
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Kink effect in current–voltage characteristics of a GaN-based high electron mobility transistor with an AlGaN back barrier |
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Chin. Phys. B
2014 Vol.23 (2): 27302-027302
[Abstract]
(703)
[HTML 1 KB]
[PDF 409 KB]
(33710)
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97303 |
Zhang Kai (张凯), Cao Meng-Yi (曹梦逸), Lei Xiao-Yi (雷晓艺), Zhao Sheng-Lei (赵胜雷), Yang Li-Yuan (杨丽媛), Zheng Xue-Feng (郑雪峰), Ma Xiao-Hua (马晓华), Hao Yue (郝跃) |
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Field plate structural optimization for enhancing the power gain of GaN-based HEMTs |
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Chin. Phys. B
2013 Vol.22 (9): 97303-097303
[Abstract]
(595)
[HTML 1 KB]
[PDF 354 KB]
(1706)
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98504 |
Wang Xing-Fu (王幸福), Tong Jin-Hui (童金辉), Zhao Bi-Jun (赵璧君), Chen Xin (陈鑫), Ren Zhi-Wei (任志伟), Li Dan-Wei (李丹伟), Zhuo Xiang-Jing (卓祥景), Zhang Jun (章俊), Yi Han-Xiang (易翰翔), Li Shu-Ti (李述体) |
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Efficiency and droop improvement in a blue InGaN-based light emitting diode with a p-InGaN layer inserted in the GaN barriers |
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Chin. Phys. B
2013 Vol.22 (9): 98504-098504
[Abstract]
(722)
[HTML 1 KB]
[PDF 437 KB]
(538)
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88401 |
Zhao Bi-Jun (赵璧君), Chen Xin (陈鑫), Ren Zhi-Wei (任志伟), Tong Jin-Hui (童金辉), Wang Xing-Fu (王幸福), Li Dan-Wei (李丹伟), Zhuo Xiang-Jing (卓祥景), Zhang Jun (章俊), Yi Han-Xiang (易翰翔), Li Shu-Ti (李述体) |
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Enhanced performance of InGaN/GaN multiple quantum well solar cells with double indium content |
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Chin. Phys. B
2013 Vol.22 (8): 88401-088401
[Abstract]
(614)
[HTML 1 KB]
[PDF 421 KB]
(675)
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68505 |
Tong Jin-Hui (童金辉), Zhao Bi-Jun (赵璧君), Wang Xing-Fu (王幸福), Chen Xin (陈鑫), Ren Zhi-Wei (任志伟), Li Dan-Wei (李丹伟), Zhuo Xiang-Jing (卓祥景), Zhang Jun (章俊), Yi Han-Xiang (易翰翔), Li Shu-Ti (李述体) |
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Droop improvement in blue InGaN light emitting diode with GaN/InGaN superlattice barriers |
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Chin. Phys. B
2013 Vol.22 (6): 68505-068505
[Abstract]
(627)
[HTML 1 KB]
[PDF 372 KB]
(864)
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68506 |
Wu Le-Juan(仵乐娟), Li Shu-Ti(李述体), Liu Chao(刘超), Wang Hai-Long(王海龙), Lu Tai-Ping(卢太平), Zhang Kang(张康), Xiao Guo-Wei(肖国伟), Zhou Yu-Gang(周玉刚), Zheng Shu-Wen(郑树文), Yin Yi-An(尹以安), and Yang Xiao-Dong(杨孝东) |
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Simulation study of blue InGaN multiple quantum well light-emitting diodes with different hole injection layers |
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Chin. Phys. B
2012 Vol.21 (6): 68506-068506
[Abstract]
(1314)
[HTML 1 KB]
[PDF 172 KB]
(1076)
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98503 |
Lu Tai-Ping(卢太平), Li Shu-Ti(李述体), Zhang Kang(张康), Liu Chao(刘超), Xiao Guo-Wei(肖国伟), Zhou Yu-Gang(周玉刚), Zheng Shu-Wen(郑树文), Yin Yi-An(尹以安), Wu Le-Juan(仵乐娟), Wang Hai-Long(王海龙), and Yang Xiao-Dong(杨孝东) |
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The advantage of blue InGaN multiple quantum wells light-emitting diodes with p-AlInN electron blocking layer |
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Chin. Phys. B
2011 Vol.20 (9): 98503-098503
[Abstract]
(1450)
[HTML 1 KB]
[PDF 172 KB]
(1755)
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37807 |
Lu Hui-Min(路慧敏) and Chen Gen-Xiang(陈根祥) |
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Optimization of a GaN-based irregular multiple quantum well structure for a dichromatic white LED |
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Chin. Phys. B
2011 Vol.20 (3): 37807-037807
[Abstract]
(1410)
[HTML 0 KB]
[PDF 377 KB]
(723)
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108504 |
Lu Tai-Ping(卢太平), Li Shu-Ti(李述体), Zhang Kang(张康), Liu Chao(刘超), Xiao Guo-Wei(肖国伟), Zhou Yu-Gang(周玉刚), Zheng Shu-Wen(郑树文), Yin Yi-An(尹以安), Wu Le-Juan(仵乐娟), Wang Hai-Long(王海龙), and Yang Xiao-Dong(杨孝东) |
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Blue InGaN light-emitting diodes with dip-shaped quantum wells |
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Chin. Phys. B
2011 Vol.20 (10): 108504-108504
[Abstract]
(1272)
[HTML 1 KB]
[PDF 190 KB]
(1100)
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68101 |
He An-He(何安和), Zhang Yong(章勇), Zhu Xue-Hui(朱学绘), Chen Xian-Wen(陈献文), Fan Guang-Han(范广涵), and He Miao(何苗) |
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Improved light extraction of GaN-based light-emitting diodes with surface-textured indium tin oxide electrodes by nickel nanoparticle mask dry-etching |
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Chin. Phys. B
2010 Vol.19 (6): 68101-068101
[Abstract]
(1391)
[HTML 1 KB]
[PDF 2200 KB]
(1818)
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2912 |
Fan Long(范隆), Hao Yue(郝跃), Zhao Yuan-Fu(赵元富), Zhang Jin-Cheng(张进城), Gao Zhi-Yuan(高志远), and Li Pei-Xian(李培咸) |
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Degraded model of radiation-induced acceptor defects for GaN-based high electron mobility transistors (HEMTs) |
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Chin. Phys. B
2009 Vol.18 (7): 2912-2919
[Abstract]
(1433)
[HTML 1 KB]
[PDF 275 KB]
(830)
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3363 |
Chen Wei-Hua(陈伟华), Hu Xiao-Dong(胡晓东)$^†$, Dai Tao(代涛), Li Rui(李睿), Ye Xue-Min(叶学敏), Zhao Tai-Ping(赵太平), Du Wei-Min(杜为民), Yang Zhi-Jian(杨志坚), and Zhang Guo-Yi(张国义) |
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Influence of patterned TiO2/SiO2 dielectric multilayers for back and front mirror facetson GaN-based laser diodes |
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Chin. Phys. B
2008 Vol.17 (9): 3363-3366
[Abstract]
(1283)
[HTML 1 KB]
[PDF 1927 KB]
(875)
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2402 |
Zhang Jin-Feng(张金风) and Hao Yue(郝跃) |
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GaN-based heterostructures: electric--static equilibrium and boundary conditions |
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Chin. Phys. B
2006 Vol.15 (10): 2402-2406
[Abstract]
(1467)
[HTML 1 KB]
[PDF 115 KB]
(718)
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1334 |
Zhang Jin-Feng (张金凤), Zhang Jin-Cheng (张进城), Hao Yue (郝跃) |
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Temperature dependence of Hall electron density of GaN-based heterostructures |
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Chin. Phys. B
2004 Vol.13 (8): 1334-1338
[Abstract]
(1218)
[HTML 1 KB]
[PDF 201 KB]
(488)
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