| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
Prev
Next
|
|
|
Impact of epitaxial structural parameters on two-dimensional hole gas properties in p-GaN/AlGaN/GaN heterostructures |
| Fuzhou Wen(文福洲)1, Qianshu Wu(吴千树)1, Jinwei Zhang(张津玮)1, Zhuoran Luo(罗卓然)1, Senyuan Xu(许森源)1, Hao Jiang(江灏)1, and Yang Liu(刘扬)1,2,† |
1 School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou 510006, China;
2 Sun Yat sen University Shenzhen Research Institute, Shenzhen 518057, China |
|
|
|
|
Abstract Research on p-channel field-effect transistors (p-FETs) remains limited, primarily due to the significantly lower conductivity of the two-dimensional hole gas (2DHG) compared to the two-dimensional electron gas (2DEG) in n-channel field-effect transistors (n-FETs), which poses a significant challenge for monolithic integration. In this study, we investigate the impact of epitaxial structure parameters on 2DHG properties in p-GaN/AlGaN/GaN heterostructures through semiconductor technology computer-aided design (TCAD) simulations and theoretical calculations, identifying the conditions necessary to achieve high-density 2DHG. Our simulations demonstrate that increasing the p-GaN thickness leads to two critical thicknesses determined by surface states and acceptor ionization concentration: one corresponds to the onset of 2DHG formation, and the other to its saturation. Lowering the donor surface state energy level and increasing the acceptor ionization concentration promote 2DHG formation and saturation, although the saturated density remains independent of surface states. Additionally, a higher Al composition enhances intrinsic ionization due to stronger polarization effects, thereby increasing the 2DHG sheet density. Consequently, to achieve high-density 2DHG in p-GaN/AlGaN/GaN heterostructures, it is essential to increase the Al composition, ensure that the p-GaN thickness exceeds the critical thickness for 2DHG saturation, and maximize the acceptor ionization concentration. This study elucidates the impact of epitaxial structure parameters on 2DHG properties in p-GaN/AlGaN/GaN heterostructures and provides valuable guidance for the optimization of p-FET designs.
|
Received: 16 January 2025
Revised: 19 March 2025
Accepted manuscript online: 07 April 2025
|
|
PACS:
|
71.55.Eq
|
(III-V semiconductors)
|
| |
71.23.An
|
(Theories and models; localized states)
|
| |
71.55.-i
|
(Impurity and defect levels)
|
|
| Fund: Project supported by the National Key Research and Development Program of China (Grant No. 2022YFB3604203), the Key Research and Development Program of Guangdong Province, China (Grant No. 2024B0101060002), and the Key Research and Development Program of Shenzhen City, China (Grant No. JCYJ20241202130036043). |
Corresponding Authors:
Yang Liu
E-mail: liuy69@mail.sysu.edu.cn
|
Cite this article:
Fuzhou Wen(文福洲), Qianshu Wu(吴千树), Jinwei Zhang(张津玮), Zhuoran Luo(罗卓然), Senyuan Xu(许森源), Hao Jiang(江灏), and Yang Liu(刘扬) Impact of epitaxial structural parameters on two-dimensional hole gas properties in p-GaN/AlGaN/GaN heterostructures 2025 Chin. Phys. B 34 077105
|
[1] Haziq M, Falina S, Manaf A A, Kawarada H and Syamsul M 2022 Micromachines 13 2133
[2] Islam N, Mohamed M F P, Khan M F A J, Falina S, Kawarada H and Syamsul M 2022 Crystals 12 1581
[3] He J, Cheng W C, Wang Q, Cheng K, Yu H and Chai Y 2021 Adv. Electronic Materials 7 2001045
[4] Ambacher O, Smart J, Shealy J R, Weimann N G, Chu K, Murphy M, SchaffWJ, Eastman L F, Dimitrov R,Wittmer L, Stutzmann M, Rieger W and Hilsenbeck J 1999 J. Appl. Phys. 85 3222
[5] Chen K J, Häberlen O, Lidow A, lin Tsai C, Ueda T, Uemoto Y and Wu Y 2017 IEEE Trans. Electron Dev. 64 779
[6] HuqueMA, Islam S K, Tolbert LMand Blalock B J 2012 IEEE Trans. Power Electron. 27 4153
[7] Cui M, Bu Q, Cai Y, Sun R, LiuW,Wen H, Lam S, Liang Y C, Mitrovic I Z and Taylor S 2019 Jpn. J. Appl. Phys. 58 056505
[8] Emon A I, Mirza A B, Kaplun J, Vala S S and Luo F 2022 IEEE J. Emerg. Select. Top. Power Electron. 11 2707
[9] Trescases O, Murray S, Jiang W and Zaman M 2020 IEEE International Electron Devices Meeting (IEDM), December 12-18, Electr Network, p. 27.4.1
[10] Basler M, Reiner R, Moench S, Benkhelifa F, Döring P, Waltereit P, Quay R and Ambacher O 2021 IEEE Access 9 163122
[11] Wei J, Zheng Z, Tang G, Xu H, Lyu G, Zhang L, Chen J, Hua M, Feng S and Chen T 2023 IEEE Trans. Electron Dev. 71 1365
[12] Wei J, Tang G, Xie R and Chen K J 2020 Jpn. J. Appl. Phys. 59 SG0801
[13] Sun R, Liang Y C, Yeo Y C, Zhao C, ChenWand Zhang B 2019 IEEE J. Emerg. Selec. Top. Power Electron. 8 31
[14] Tang G, Kwan A M, Wong R K, Lei J, Su R, Yao F, Lin Y, Yu J, Tsai T and Tuan H 2017 IEEE Electron Dev. Lett. 38 1282
[15] Amano H, Baines Y, Beam E, Borga M, Bouchet T, Chalker P R, Charles M, Chen K J, Chowdhury N and Chu R 2018 J. Phys. D: Appl. Phys. 51 163001
[16] Wong K Y R, Kwan M H, Yao F W, Tsai M W, Lin Y S, Chang Y C, Chen P C, Su R Y, Yu J L, Yang F J, Lansbergen G P, Hsiung C W, Lai Y A, Chiu K L, Chen C F, Lin M C, Wu H Y, Chiang C H, Liu S D, Chiu H C, Liu P C, Chen C M, Yu C Y, Tsai C S, Wu C B, Lin B, Chang M H, You J S, Wang S P, Chen L C, Liao Y Y, Tsai L Y, Tsai T, Tuan H C and Kalnitsky A 2015 IEEE International Electron Devices Meeting (IEDM), December 07-09, Washington, DC, p. 9.5.1
[17] Van Hove M, Boulay S, Bahl S R, Stoffels S, Kang X, Wellekens D, Geens K, Delabie A and Decoutere S 2012 IEEE Electron Dev. Lett. 33 667
[18] Bader S J, Lee H, Chaudhuri R, Huang S, Hickman A, Molnar A, Xing H G, Jena D, Then H W and Chowdhury N 2020 IEEE Trans. Electron Dev. 67 4010
[19] Peralagu U, Alian A, Putcha V, Khaled A, Rodriguez R, Sibaja- Hernandez A, Chang S, Simoen E, Zhao S E, De Jaeger B, Fleetwood D M, Wambacq P, Zhao M, Parvais B, Waldron N and Collaert N 2019 IEEE International Electron Devices Meeting (IEDM), December 09- 11, San Francisco, CA, p. 17.2.1
[20] Zheng Z, Zhang L, SongW, Feng S, Xu H, Sun J, Yang S, Chen T,Wei J and Chen K 2021 Nat. Electron. 4 595
[21] Hahn H, Reuters B, Kotzea S, Lükens G, Geipel S, Kalisch H and Vescan A 2014 72nd Annual Device Research Conference (DRC), June 22-25, Univ Calif, Santa Barbara, CA, p. 259
[22] Chu R, Cao Y, Chen M, Li R and Zehnder D 2016 IEEE Electron Dev. Lett. 37 269
[23] Nakajima A, Sumida Y, Dhyani M H, Kawai H and Narayanan E M S 2010 Appl. Phys. Express 3 121004
[24] Nakajima A, Liu P, Ogura M, Makino T, Kakushima K, Nishizawa S I, Ohashi H, Yamasaki S and Iwai H 2014 J. Appl. Phys. 115 153707
[25] Wang Y, Huang S, Jiang Q, Wang X, Ji Z, Fan J, Yin H, Wei K, Liu X, Sun Q and Chen K J 2023 Appl. Phys. Lett. 123 262107
[26] He H and Yang S 2022 Chin. Phys. B 31 017104
[27] Shao P, Fan X, Li S, Chen S, Zhou H, Liu H, Guo H, Xu W, Tao T, Xie Z, Lu H, Wang K, Liu B, Chen D, Zheng Y and Zhang R 2023 Appl. Phys. Lett. 122 142102
[28] Ng Y H, Zheng Z, Zhang L, Liu R, Chen T, Feng S, Shao Q and Chen K J 2023 Appl. Phys. Lett. 123 142106
[29] Lähnemann J, Brandt O, Jahn U, Pfüller C, Roder C, Dogan P, Grosse F, Belabbes A, Bechstedt F, Trampert A and Geelhaar L 2012 Phys. Rev. B 86 081302
[30] Bernardini F, Fiorentini V and Vanderbilt D 1997 Phys. Rev. B 56 10024
[31] Yan W S, Zhang R, Xiu X Q, Xie Z L, Han P, Jiang R L, Gu S L, Shi Y and Zheng Y D 2007 Appl. Phys. Lett. 90 212102
[32] Rumyantsev S L, Shur M S and Levinshtein M E 2004 International Journal of High Speed Electronics and Systems 14 1
[33] Shalish I, Shapira Y, Burstein L and Salzman J 2001 J. Appl. Phys. 89 390
[34] Chen J, Huang W, Qu H, Zhang Y, Zhou J, Chen B and Zou X 2022 Appl. Phys. Lett. 120 212105
[35] Sang L, Ren B, Nabatame T, Sumiya M and Liao M 2021 J. Alloys Compd. 853 157356 (in Chinese) |
| No Suggested Reading articles found! |
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
Cited |
|
|
|
|
Altmetric
|
|
blogs
Facebook pages
Wikipedia page
Google+ users
|
Online attention
Altmetric calculates a score based on the online attention an article receives. Each coloured thread in the circle represents a different type of online attention. The number in the centre is the Altmetric score. Social media and mainstream news media are the main sources that calculate the score. Reference managers such as Mendeley are also tracked but do not contribute to the score. Older articles often score higher because they have had more time to get noticed. To account for this, Altmetric has included the context data for other articles of a similar age.
View more on Altmetrics
|
|
|
