Influence of surface states on deep level transient spectroscopy in AlGaN/GaN heterostructure

doi:10.1088/1674-1056/25/6/067305

Abstract

Deep level transient spectroscopy (DLTS) as a method to investigate deep traps in AlGaN/GaN heterostructure or high electron mobility transistors (HEMTs) has been widely utilized. The DLTS measurements under different bias conditions are carried out in this paper. Two hole-like traps with active energies of E_v+0.47 eV, and E_v+0.10 eV are observed, which are related to surface states. The electron traps with active energies of E_c-0.56 eV are located in the channel, those with E_c-0.33 eV and E_c-0.88 eV are located in the AlGaN layer. The presence of surface states has a strong influence on the detection of electron traps, especially when the electron traps are low in density. The DLTS signal peak height of the electron trap is reduced and even disappears due to the presence of plentiful surface state.

Keywords: AlGaN/GaN hole-like traps DLTS surface states

Received: 09 November 2015
Revised: 22 February 2016
Accepted manuscript online:

PACS:	73.61.Ey	(III-V semiconductors)
	73.40.Kp	(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
	73.50.Gr	(Charge carriers: generation, recombination, lifetime, trapping, mean free paths)
	73.20.At	(Surface states, band structure, electron density of states)

Fund:

Project supported by the National Key Basic Research Program of China (Grant No. 2011CBA00606), the Program for New Century Excellent Talents in University, China (Grant No. NCET-12-0915), and the National Natural Science Foundation of China (Grant Nos. 61334002 and 61404097).

Corresponding Authors: Xiao-Hua Ma
E-mail: xhma@xidian.edu.cn

Cite this article:

Qing Zhu(朱青), Xiao-Hua Ma(马晓华), Wei-Wei Chen(陈伟伟), Bin Hou(侯斌), Jie-Jie Zhu(祝杰杰), Meng Zhang(张濛), Li-Xiang Chen(陈丽香), Yan-Rong Cao(曹艳荣), Yue Hao(郝跃) Influence of surface states on deep level transient spectroscopy in AlGaN/GaN heterostructure 2016 Chin. Phys. B 25 067305

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Influence of surface states on deep level transient spectroscopy in AlGaN/GaN heterostructure

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